IRFR9210 Todos los transistores

 ..1. Size:166K  1
 irfr9210 irfr9212.pdf

 ..2. Size:1809K  international rectifier
 irfr9210pbf irfu9210pbf.pdf

PD - 95027A IRFR9210PbF IRFU9210PbF Lead-Free 12/14/04 Document Number 91281 www.vishay.com 1 IRFR/U9210PbF Document Number 91281 www.vishay.com 2 IRFR/U9210PbF Document Number 91281 www.vishay.com 3 IRFR/U9210PbF Document Number 91281 www.vishay.com 4 IRFR/U9210PbF Document Number 91281 www.vishay.com 5 IRFR/U9210PbF Document Number 91281 www.vishay.com 6

 ..3. Size:172K  international rectifier
 irfr9210.pdf

 ..4. Size:1578K  vishay
 irfr9210 irfu9210 sihfr9210 sihfu9210.pdf

IRFR9210, IRFU9210, SiHFR9210, SiHFU9210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 3.0 RoHS* Surface Mount (IRFR9210/SiHFR9210) Qg (Max.) (nC) 8.9 COMPLIANT Straight Lead (IRFU9210/SiHFU9210) Qgs (nC) 2.1 Qgd (nC) 3.9 Available in Tape and Reel Conf

 ..5. Size:803K  vishay
 irfr9210pbf irfu9210pbf sihfr9210 sihfu9210.pdf

IRFR9210, IRFU9210, SiHFR9210, SiHFU9210 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 200 Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 3.0 Surface Mount (IRFR9210, SiHFR9210) Qg (Max.) (nC) 8.9 Straight Lead (IRFU9210, SiHFU9210) Qgs (nC) 2.1 Available in Tape and Reel Qgd (nC) 3.9 P-Channel

 7.1. Size:107K  international rectifier
 irfr9214.pdf

PD - 9.1658A IRFR/U9214 PRELIMINARY HEXFET Power MOSFET P-Channel D VDSS = -250V Surface Mount (IRFR9214) Straight Lead (IRFU9214) RDS(on) = 3.0 Advanced Process Technology G Fast Switching Fully Avalanche Rated ID = -2.7A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve low on-resistance per silico

 7.2. Size:279K  international rectifier
 irfr9214 irfu9214.pdf

PD - 95375A IRFR/U9214PbF HEXFET Power MOSFET l P-Channel D VDSS = -250V l Surface Mount (IRFR9214) l Straight Lead (IRFU9214) RDS(on) = 3.0 l Advanced Process Technology G l Fast Switching l Fully Avalanche Rated ID = -2.7A S l Lead-Free Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve low on-resistance pe

 7.3. Size:159K  vishay
 irfr9214pbf.pdf

IRFR9214, IRFU9214, SiHFR9214, SiHFU9214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY P-Channel VDS (V) - 250 Surface Mount (IRFR9214/SiHFR9214) Available RDS(on) ( )VGS = - 10 V 3.0 Straight Lead (IRFU9214/SiHFU9214) RoHS* Qg (Max.) (nC) 14 COMPLIANT Advanced Process Technology Qgs (nC) 3.1 Fast Switching Qgd (nC) 6.8 Fully Avalanche Rated C

 7.4. Size:151K  vishay
 irfr9214 irfu9214 sihfr9214 sihfu9214.pdf

IRFR9214, IRFU9214, SiHFR9214, SiHFU9214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY P-Channel VDS (V) - 250 Surface Mount (IRFR9214/SiHFR9214) Available RDS(on) ( )VGS = - 10 V 3.0 Straight Lead (IRFU9214/SiHFU9214) RoHS* Qg (Max.) (nC) 14 COMPLIANT Advanced Process Technology Qgs (nC) 3.1 Fast Switching Qgd (nC) 6.8 Fully Avalanche Rated C