SI2347DS Todos los transistores

 ..1. Size:223K  vishay
 si2347ds.pdf

Si2347DS Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A)a Qg (Typ.) 100 % Rg Tested Material categorization 0.042 at VGS = - 10 V - 5 For definitions of compliance please see - 30 0.054 at VGS = - 6 V - 4.4 6.9 nC www.vishay.com/doc?99912 0.068 at VGS = - 4.5 V - 3.9 APPLICATI

 ..2. Size:1474K  cn vbsemi
 si2347ds.pdf

SI2347DS www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SOT-23

 9.1. Size:241K  vishay
 si2342ds.pdf

New Product Si2342DS Vishay Siliconix N-Channel 8 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET 0.017 at VGS = 4.5 V 6 Low On-Resistance 0.020 at VGS = 2.5 V 6 100 % Rg Tested 0.022 at VGS = 1.8 V 8 6 nC 6 Compliant to RoHS Directive

 9.2. Size:107K  vishay
 si2343cds.pdf

Si2343CDS Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) Definition TrenchFET Power MOSFET 0.045 at VGS = - 10 V - 5.9 - 30 7 nC 100 % Rg Tested 0.075 at VGS = - 4.5 V - 4.6 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch Not

 9.3. Size:188K  vishay
 si2343ds.pdf

Si2343DS Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.053 at VGS = - 10 V - 4.0 TrenchFET Power MOSFET - 30 0.086 at VGS = - 4.5 V - 3.1 APPLICATIONS Load Switch PA Switch TO-236 (SOT-23) G 1 3 D S 2 Top View Si2343DS (F3)* * Marking Code O

 9.4. Size:144K  vishay
 si2341.pdf

Shenzhen Tuofeng Semiconductor Technology Co., Ltd Si2341 P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFETS VDS (V) rDS(on) (W) ID (A)b APPLICATIONS 0.072 @ VGS = -10 V -2.8 D Load Switch -30 30 D PA Switch 0.120 @ VGS = - 4.5 V -2.0 TO-236 (SOT-23) G 1 3 D Ordering Information Si2341 S 2 Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTH

 9.5. Size:207K  vishay
 si2341ds.pdf

Si2341DS Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)b Definition 0.072 at VGS = - 10 V - 2.8 TrenchFET Power MOSFETS - 30 Compliant to RoHS Directive 2002/95/EC 0.120 at VGS = - 4.5 V - 2.0 APPLICATIONS Load Switch PA Switch TO-236 (SOT-23) G 1 3 D S 2 T

 9.6. Size:1715K  kexin
 si2341ds-3.pdf

 9.7. Size:1686K  kexin
 si2343ds.pdf

SMD Type MOSFET P-Channel MOSFET SI2343DS (KI2343DS) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features VDS (V) =-30V ID =-4 A (VGS =-10V) 1 2 RDS(ON) 53m (VGS =-10V) +0.1 +0.05 0.95 -0.1 0.1 -0.01 RDS(ON) 86m (VGS =-4.5V) +0.1 1.9 -0.1 G 1 3 D 1. Gate 2. Source S 2 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Sym

 9.8. Size:1691K  kexin
 si2343ds-3.pdf

SMD Type MOSFET P-Channel MOSFET SI2343DS (KI2343DS) SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4-0.1 Features 3 VDS (V) =-30V ID =-4 A (VGS =-10V) RDS(ON) 53m (VGS =-10V) 1 2 +0.02 +0.1 0.15 -0.02 0.95 -0.1 RDS(ON) 86m (VGS =-4.5V) +0.1 1.9 -0.2 G 1 3 D 1. Gate 2. Source S 2 3. Drain Absolute Maximum Ratings Ta = 25 Parameter

 9.9. Size:120K  kexin
 si2345ds.pdf

SMD Type MOSFET P-Channel Enhancement MOSFET (KI2345DS) SI2345DS SOT-23-3 Unit mm +0.2 2.9 -0.1 Features +0.1 0.4 -0.1 VDS (V) =-30V 3 ID =-4.2 A (VGS =-10V) RDS(ON) 50m (VGS =-10V) RDS(ON) 65m (VGS =-4.5V) 12 D +0.02 +0.1 0.15 -0.02 0.95-0.1 RDS(ON) 120m (VGS =-2.5V) +0.1 1.9 -0.2 G 1. Gate S 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter

 9.10. Size:1682K  kexin
 si2341ds.pdf

SMD Type MOSFET P-Channel Enhancement MOSFET SI2341DS (KI2341DS) SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 Features -0.1 3 VDS (V) =-30V ID =-2.8A (VGS =-10V) RDS(ON) 72m (VGS =-10V) 1 2 RDS(ON) 120m (VGS =-4.5V) +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9-0.1 G 1 1.Gate 3 D 2.Source S 2 3.Drain Absolute Maximum Ratings Ta = 25 Param

 9.11. Size:907K  cn vbsemi
 si2342ds-t1.pdf

Si2342DS-T1 www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/DC Co