SI2371EDS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Si2371EDSVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max.ID (A)a Qg (Typ.) 100 % Rg Tested Built-in ESD Protection 0.045 at VGS = - 10 V - 4.8- Typical ESD Performance 3000 V0.053 at VGS = - 4.5 V - 4.4 10.6 nC- 30 Material categorization:0.080 at VGS = - 2.5 V - 3.6For definition

Si2374DSwww.vishay.comVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) d Qg (TYP.) 100 % Rg tested0.030 at VGS = 4.5 V 5.9 Material categorization: 20 0.034 at VGS = 2.5 V 5.5 7.7 nCFor definitions of compliance please see 0.041 at VGS = 1.8 V 5www.vishay.com/doc?99912 APPLICATIONS

New ProductSi2377EDSVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.061 at VGS = - 4.5 V - 4.4 TrenchFET Power MOSFET0.080 at VGS = - 2.5 V - 3.8 100 % Rg Tested- 20 7.6 nC0.110 at VGS = - 1.8 V - 3.3 Typical ESD Performance 2000 V B

New ProductSi2377EDSVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.061 at VGS = - 4.5 V - 4.4 TrenchFET Power MOSFET0.080 at VGS = - 2.5 V - 3.8 100 % Rg Tested- 20 7.6 nC0.110 at VGS = - 1.8 V - 3.3 Typical ESD Performance 2000 V B

SMD Type MOSFETP-Channel MOSFETSI2377EDS (KI2377EDS)SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features VDS (V) = -20V ID = -4.4 A1 2 RDS(ON) 61m (VGS = -4.5V)+0.1+0.050.95 -0.1 0.1-0.01 RDS(ON) 80m (VGS = -2.5V)+0.11.9 -0.1 RDS(ON) 110m (VGS = -1.8V) RDS(ON) 165m (VGS = -1.5V)1. Gate2. Source3. Dra

SMD Type MOSFETP-Channel MOSFETSI2377EDS (KI2377EDS)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.13 Features VDS (V) = -20V ID = -4.4 A1 2+0.02 RDS(ON) 61m (VGS = -4.5V) +0.10.15 -0.020.95 -0.1+0.11.9 -0.2 RDS(ON) 80m (VGS = -2.5V) RDS(ON) 110m (VGS = -1.8V) RDS(ON) 165m (VGS = -1.5V)1. Gate2. Source3.

SMD Type MOSFETN-Channel MOSFETSI2372DS (KI2372DS)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.13 Features VDS (V) = 30V ID = 5.3 A (VGS = 10V)1 2+0.02+0.10.15 -0.02 RDS(ON) 33m (VGS = 10V) 0.95 -0.1+0.11.9-0.2 RDS(ON) 38m (VGS = 6V) RDS(ON) 43m (VGS = 4.5V)1. Gate2. SourceD3. DrainGS Absolute Maximum R

SMD Type MOSFETN-Channel MOSFETSI2372DS (KI2372DS)SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features VDS (V) = 30V ID = 5.3 A (VGS = 10V)1 2+0.050.95+0.1-0.1 0.1 -0.01 RDS(ON) 33m (VGS = 10V)1.9+0.1-0.1 RDS(ON) 38m (VGS = 6V) RDS(ON) 43m (VGS = 4.5V)1. Gate2. SourceD3. DrainGS Absolute Maximum Ratin

Si2377EDSwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-2