SI3421DV Todos los transistores

 ..1. Size:216K  vishay
 si3421dv.pdf

Si3421DV Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A)d,e Qg (Typ.) 100 % Rg and UIS Tested Material categorization 0.0192 at VGS = -10 V -8 For definitions of compliance please see -30 0.0232 at VGS = -6 V -8 21 nC www.vishay.com/doc?99912 0.0270 at VGS = -4.5 V -8 Available TSO

 9.1. Size:240K  vishay
 si3429edv.pdf

Si3429EDV www.vishay.com Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) RDS(on) ( ) MAX. ID (A) a, e Qg (TYP.) 100 % Rg tested 0.0210 at VGS = -4.5 V -8 Built-in ESD protection -20 0.0240 at VGS = -2.5 V -8 43.2 nC - Typical ESD performance 3000 V 0.0380 at VGS = -1.8 V -8 Material categorization For defini

 9.2. Size:204K  vishay
 si3424bdv.pdf

Si3424BDV Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.028 at VGS = 10 V 8a TrenchFET Power MOSFET 30 6.2 100 % Rg Tested 0.038 at VGS = 4.5 V 7 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch for Portable Devices TSOP

 9.3. Size:180K  vishay
 si3424dv.pdf

Si3424DV Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.028 at VGS = 10 V 6.7 TrenchFET Power MOSFETs 30 0.038 at VGS = 4.5 V 5.7 Compliant to RoHS Directive 2002/95/EC TSOP-6 Top View (1, 2, 5, 6) D 1 6 3 mm 5 2 (3) G 3 4 2.85 mm (4) S Ordering I

 9.4. Size:211K  vishay
 si3424cdv.pdf

Si3424CDV Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, b Qg (Typ.) Definition 0.026 at VGS = 10 V TrenchFET Power MOSFET 8 30 4.2 100 % Rg Tested 0.032 at VGS = 4.5 V 8 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch for Portable Devices

 9.5. Size:53K  vishay
 si3422dv.pdf

Si3422DV New Product Vishay Siliconix N-Channel 200-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 200 5 @ VGS = 10 V "0.42 (1, 2, 5, 6) D TSOP-6 Top View 1 6 (3) G 3 mm 5 2 3 4 (4) S 2.85 mm N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage VDS 200 V V Gate-Source Voltag

 9.6. Size:89K  vishay
 si3420dv.pdf

Si3420DV Vishay Siliconix N-Channel 200-V (D-S) MOSFET FEATURES PRODUCT SUMMARY D 100% Rg Tested VDS (V) rDS(on) (W) ID (A) 200 3.7 @ VGS = 10 V 0.5 TSOP-6 (1, 2, 5, 6) D Top View 1 6 3 mm 5 2 (3) G 3 4 2.85 mm (4) S Ordering Information Si3420DV-T1 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 secs Steady State Unit Drai

 9.7. Size:203K  vishay
 si3424bd.pdf

Si3424BDV Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.028 at VGS = 10 V 8a TrenchFET Power MOSFET 30 6.2 100 % Rg Tested 0.038 at VGS = 4.5 V 7 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch for Portable Devices TSOP

 9.8. Size:465K  vishay
 si3420.pdf

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 SI3420 Phone (818) 701-4933 Fax (818) 701-4939 Features N-Channel High dense cell design for extremely low RDS(ON) Rugged and reliable Enhancement Mode Lead free product is acquired SOT-23 Package Field Effect Transistor Marking Code R20 Epoxy me

 9.9. Size:625K  mcc
 si3420a.pdf

SI3420A Features High Power and Current Handing Capability Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 N-CHANNEL Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS MOSFET Compliant. See Ordering Information) Maximum Ratings Operating Junction Temperature Range -55