SI3430DV Todos los transistores

 

SI3430DV MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SI3430DV
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.14 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 1.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 11 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.17 Ohm
   Paquete / Cubierta: TSOP-6
 

 Búsqueda de reemplazo de SI3430DV MOSFET

   - Selección ⓘ de transistores por parámetros

 

SI3430DV Datasheet (PDF)

 ..1. Size:175K  vishay
si3430dv.pdf pdf_icon

SI3430DV

Si3430DVVishay SiliconixN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.170 at VGS = 10 V 2.4 High-Efficiency PWM Optimized1000.185 at VGS = 6.0 V 2.3 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTSOP-6Top View(1, 2, 5, 6) D1 63 mm52(3) G3 4

 ..2. Size:863K  cn vbsemi
si3430dv.pdf pdf_icon

SI3430DV

SI3430DVwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET0.095 at VGS = 10 V 3.2 Low On-Resistance100 4.2 nC0.105 at VGS = 4.5 V 3.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTSOP-6APPLICATIONS

 9.1. Size:180K  vishay
si3434dv.pdf pdf_icon

SI3430DV

Si3434DVVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.034 at VGS = 4.5 V 6.1 TrenchFET Power MOSFET300.050 at VGS = 2.5 V 5.0 2.5 V Rating for 30 V N-Channel Low RDS(on) for Footprint Area Compliant to RoHS Directive 2002/95/ECAPPLICATIONS

 9.2. Size:205K  vishay
si3433cd.pdf pdf_icon

SI3430DV

New ProductSi3433CDVVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.038 at VGS = - 4.5 V - 6 TrenchFET Power MOSFET0.046 at VGS = - 2.5 V - 6 18 nC- 20APPLICATIONS0.060 at VGS = - 1.8 V - 6 Load Switch NotebookTSOP-6(4) STop View

Otros transistores... SI3415 , SI3417DV , SI3420 , SI3421DV , SI3424BDV , SI3424CDV , SI3424DV , SI3429EDV , IRFZ44 , SI3433CDV , SI3434 , SI3434DV , SI3438DV , SI3440DV , SI3441BDV , SI3442BDV , SI3442CDV .

History: AP9565AGJ | APM9966C | 2SK2753-01

 

 
Back to Top

 


 
.