SI3430DV Todos los transistores

 ..1. Size:175K  vishay
 si3430dv.pdf

Si3430DV Vishay Siliconix N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.170 at VGS = 10 V 2.4 High-Efficiency PWM Optimized 100 0.185 at VGS = 6.0 V 2.3 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC TSOP-6 Top View (1, 2, 5, 6) D 1 6 3 mm 5 2 (3) G 3 4

 ..2. Size:863K  cn vbsemi
 si3430dv.pdf

SI3430DV www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET 0.095 at VGS = 10 V 3.2 Low On-Resistance 100 4.2 nC 0.105 at VGS = 4.5 V 3.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC TSOP-6 APPLICATIONS

 9.1. Size:180K  vishay
 si3434dv.pdf

Si3434DV Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.034 at VGS = 4.5 V 6.1 TrenchFET Power MOSFET 30 0.050 at VGS = 2.5 V 5.0 2.5 V Rating for 30 V N-Channel Low RDS(on) for Footprint Area Compliant to RoHS Directive 2002/95/EC APPLICATIONS

 9.2. Size:205K  vishay
 si3433cd.pdf

New Product Si3433CDV Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.038 at VGS = - 4.5 V - 6 TrenchFET Power MOSFET 0.046 at VGS = - 2.5 V - 6 18 nC - 20 APPLICATIONS 0.060 at VGS = - 1.8 V - 6 Load Switch Notebook TSOP-6 (4) S Top View

 9.3. Size:206K  vishay
 si3433cdv.pdf

New Product Si3433CDV Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.038 at VGS = - 4.5 V - 6 TrenchFET Power MOSFET 0.046 at VGS = - 2.5 V - 6 18 nC - 20 APPLICATIONS 0.060 at VGS = - 1.8 V - 6 Load Switch Notebook TSOP-6 (4) S Top View

 9.4. Size:461K  vishay
 si3434.pdf

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 SI3434 Phone (818) 701-4933 Fax (818) 701-4939 Features N-Channel High dense cell design for extremely low RDS(ON) Rugged and reliable Enhancement Mode Lead free product is acquired SOT-23 Package Field Effect Transistor Marking Code R34 Epoxy me

 9.5. Size:208K  vishay
 si3438dv.pdf

New Product Si3438DV Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.0355 at VGS = 10 V 7.4 TrenchFET Power MOSFET 40 5.3 nC Compliant to RoHS Directive 2002/95/EC 0.0425 at VGS = 4.5 V 6.7 APPLICATIONS DC/DC Converter TSOP-6 Top View D D

 9.6. Size:85K  vishay
 si3435dv.pdf

Si3435DV Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.036 at VGS = - 4.5 V - 6.3 TrenchFET Power MOSFETs 0.050 at VGS = - 2.5 V - 12 - 5.3 1.8 V Rated 0.073 at VGS = - 1.8 V - 4.4 Compliant to RoHS Directive 2002/95/EC TSOP-6 (4) S Top View 1 6

 9.7. Size:196K  vishay
 si3437dv.pdf

Si3437DV Vishay Siliconix P-Channel 150-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.75 at VGS = - 10 V - 1.4 TrenchFET Power MOSFET - 150 8 nC 100 % Rg and UIS Tested 0.79 at VGS = - 6 V - 1.3 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Active Clamp Circu

 9.8. Size:49K  vishay
 si3433.pdf

Si3433 New Product Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.042 @ VGS = -4.5 V -5.6 -20 0.057 @ VGS = - 2.5 V -4.8 0.080 @ VGS = - 1.8 V -4.1 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 5 2 3 4 (1, 2, 5, 6) D 2.85 mm P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 secs Steady State

 9.9. Size:184K  vishay
 si3433bdv.pdf

Si3433BDV Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.042 at VGS = - 4.5 V - 5.6 TrenchFET Power MOSFETs 1.8 V Rated 0.057 at VGS = - 2.5 V - 20 - 4.8 Compliant to RoHS Directive 2002/95/EC 0.080 at VGS = - 1.8 V - 4.1 TSOP-6 Top View (4) S 1 6 3 mm

 9.10. Size:2060K  kexin
 si3437dv.pdf