SI3434DV Todos los transistores

 

SI3434DV MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SI3434DV
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.14 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 4.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 45 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.034 Ohm
   Paquete / Cubierta: TSOP-6
     - Selección de transistores por parámetros

 

SI3434DV Datasheet (PDF)

 ..1. Size:180K  vishay
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SI3434DV

Si3434DVVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.034 at VGS = 4.5 V 6.1 TrenchFET Power MOSFET300.050 at VGS = 2.5 V 5.0 2.5 V Rating for 30 V N-Channel Low RDS(on) for Footprint Area Compliant to RoHS Directive 2002/95/ECAPPLICATIONS

 8.1. Size:461K  vishay
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SI3434DV

MCCMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components CA 91311SI3434Phone: (818) 701-4933Fax: (818) 701-4939FeaturesN-Channel High dense cell design for extremely low RDS(ON) Rugged and reliableEnhancement Mode Lead free product is acquired SOT-23 PackageField Effect Transistor Marking Code: R34 Epoxy me

 9.1. Size:205K  vishay
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SI3434DV

New ProductSi3433CDVVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.038 at VGS = - 4.5 V - 6 TrenchFET Power MOSFET0.046 at VGS = - 2.5 V - 6 18 nC- 20APPLICATIONS0.060 at VGS = - 1.8 V - 6 Load Switch NotebookTSOP-6(4) STop View

 9.2. Size:206K  vishay
si3433cdv.pdf pdf_icon

SI3434DV

New ProductSi3433CDVVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.038 at VGS = - 4.5 V - 6 TrenchFET Power MOSFET0.046 at VGS = - 2.5 V - 6 18 nC- 20APPLICATIONS0.060 at VGS = - 1.8 V - 6 Load Switch NotebookTSOP-6(4) STop View

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History: FDC638APZ | P2610ADG | AP50WN1K0I | S10H12S | IXTV26N50PS | APT40M70JVFR | SIHFP048R

 

 
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