SI3438DV MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SI3438DV
   Código: AW*
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 7.4 nC
   trⓘ - Tiempo de subida: 17 nS
   Cossⓘ - Capacitancia de salida: 73 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0355 Ohm
   Paquete / Cubierta: TSOP-6

Búsqueda de reemplazo de MOSFET SI3438DV

SI3438DV Datasheet (PDF)

..1. Size:208K vishay
si3438dv.pdf

New ProductSi3438DVVishay SiliconixN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0355 at VGS = 10 V 7.4 TrenchFET Power MOSFET40 5.3 nC Compliant to RoHS Directive 2002/95/EC0.0425 at VGS = 4.5 V 6.7APPLICATIONS DC/DC ConverterTSOP-6 Top View D D

9.1. Size:180K vishay
si3434dv.pdf

Si3434DVVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.034 at VGS = 4.5 V 6.1 TrenchFET Power MOSFET300.050 at VGS = 2.5 V 5.0 2.5 V Rating for 30 V N-Channel Low RDS(on) for Footprint Area Compliant to RoHS Directive 2002/95/ECAPPLICATIONS

9.2. Size:205K vishay
si3433cd.pdf

New ProductSi3433CDVVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.038 at VGS = - 4.5 V - 6 TrenchFET Power MOSFET0.046 at VGS = - 2.5 V - 6 18 nC- 20APPLICATIONS0.060 at VGS = - 1.8 V - 6 Load Switch NotebookTSOP-6(4) STop View

9.3. Size:206K vishay
si3433cdv.pdf

9.4. Size:461K vishay
si3434.pdf

MCCMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components CA 91311SI3434Phone: (818) 701-4933Fax: (818) 701-4939FeaturesN-Channel High dense cell design for extremely low RDS(ON) Rugged and reliableEnhancement Mode Lead free product is acquired SOT-23 PackageField Effect Transistor Marking Code: R34 Epoxy me

9.5. Size:85K vishay
si3435dv.pdf

Si3435DVVishay SiliconixP-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.036 at VGS = - 4.5 V - 6.3 TrenchFET Power MOSFETs0.050 at VGS = - 2.5 V - 12 - 5.3 1.8 V Rated 0.073 at VGS = - 1.8 V - 4.4 Compliant to RoHS Directive 2002/95/ECTSOP-6(4) STop View1 6

9.6. Size:196K vishay
si3437dv.pdf

Si3437DVVishay SiliconixP-Channel 150-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.75 at VGS = - 10 V - 1.4 TrenchFET Power MOSFET- 150 8 nC 100 % Rg and UIS Tested 0.79 at VGS = - 6 V - 1.3 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Active Clamp Circu

9.7. Size:175K vishay
si3430dv.pdf

Si3430DVVishay SiliconixN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.170 at VGS = 10 V 2.4 High-Efficiency PWM Optimized1000.185 at VGS = 6.0 V 2.3 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTSOP-6Top View(1, 2, 5, 6) D1 63 mm52(3) G3 4

9.8. Size:49K vishay
si3433.pdf

Si3433New ProductVishay SiliconixP-Channel 1.8-V (G-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.042 @ VGS = -4.5 V-5.6-20 0.057 @ VGS = - 2.5 V -4.80.080 @ VGS = - 1.8 V -4.1(4) STSOP-6Top View1 6(3) G3 mm523 4(1, 2, 5, 6) D2.85 mmP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol 5 secs Steady State

9.9. Size:184K vishay
si3433bdv.pdf

Si3433BDVVishay SiliconixP-Channel 1.8-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.042 at VGS = - 4.5 V - 5.6 TrenchFET Power MOSFETs: 1.8 V Rated0.057 at VGS = - 2.5 V - 20 - 4.8 Compliant to RoHS Directive 2002/95/EC0.080 at VGS = - 1.8 V - 4.1TSOP-6Top View(4) S1 63 mm

9.10. Size:2060K kexin
si3437dv.pdf

SMD Type MOSFETP-Channel MOSFETSI3437DV (KI3437DV)( )SOT-23-6 Unit: mm0.4+0.1-0.1 Features 6 5 4 VDS (V) =-150V ID =-1.4 A (VGS =-10V) RDS(ON) 750m (VGS =-10V)S1 2 3+0.02 RDS(ON) 790m (VGS =-6V)0.15 -0.02+0.01-0.01+0.2-0.1G1. Drain 2. Drain3.Gate4. Source 5. DrainD 6. Drain Absolute Maximum Ratings Ta = 25

9.11. Size:863K cn vbsemi
si3430dv.pdf

SI3430DVwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET0.095 at VGS = 10 V 3.2 Low On-Resistance100 4.2 nC0.105 at VGS = 4.5 V 3.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTSOP-6APPLICATIONS

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

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