SI3446ADV MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Si3446ADVVishay SiliconixN-Channel 20-V (D-S) MOSFETPRODUCT SUMMARY FEATURESVDS (V) RDS(on) ()ID (A)a Qg (Typ.) Halogen-free According to IEC 61249-2-21Definition0.037 at VGS = 4.5 V 620 5.6 nC TrenchFET Power MOSFET0.065 at VGS = 2.5V 6 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch for Portable Applications Small High Fre

Si3446DVVishay SiliconixN-Channel 2.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)D 100% Rg Tested0.045 @ VGS = 4.5 V 5.3RoHS2020COMPLIANT0.065 @ VGS = 2.5 V 4.4(1, 2, 5, 6) DTSOP-6Top View1 63 mm52(3) G3 42.85 mm(4) SOrdering Information: Si3446DV-T1N-Channel MOSFETSi3446DV-T1E3 (Lead (Pb)fr

PD-95240Si3443DVPbFHEXFET Power MOSFETl Ultra Low On-Resistance A1 6D Dl P-Channel MOSFETVDSS = -20Vl Surface Mount25DDl Available in Tape & Reell -2.5V Rated34G SRDS(on) = 0.065l Lead-FreeTop ViewDescriptionThese P-channel MOSFETs from International Rectifierutilize advanced processing techniques to achieve theextremely low on-resistance per

PD- 93795ASi3443DVHEXFET Power MOSFET Ultra Low On-ResistanceA1 6D D P-Channel MOSFETVDSS = -20V Surface Mount25DD Available in Tape & Reel -2.5V Rated3 4G SRDS(on) = 0.065Top ViewDescriptionThese P-channel MOSFETs from International Rectifierutilize advanced processing techniques to achieve theextremely low on-resistance per silicon area. This

April 2001Si3443DVP-Channel 2.5V Specified PowerTrench MOSFETGeneral DescriptionFeatures DS(ON) GS DS(ON) GS

Si3443CDVVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 DefinitionVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.060 at VGS = - 4.5 V - 4.7 PWM Optimized0.084 at VGS = - 2.7 V - 3.9 7.53 nC 100 % Rg Tested- 20 Compliant to RoHS Directive 2002/95/EC0.100 at VGS = -

Si3443DVVishay SiliconixP-Channel 2.5-V (G-S) MOSFETPRODUCT SUMMARYFEATURESVDS (V) rDS(on) (W) ID (A) D TrenchFETr Power MOSFETD 100% Rg Tested0.065 @ VGS = -4.5 V -4.50.090 @ VGS = -2.7 V -3.8-200.100 @ VGS = -2.5 V -3.7TSOP-6(4) STop View1 6(3) G3 mm523 42.85 mm(1, 2, 5, 6) DOrdering Information: Si3443DV-T1E3 (Lead Free)P-Channel MOSFETABSOL

Si3442BDVVishay SiliconixN-Channel 2.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.057 at VGS = 4.5 V 4.2 TrenchFET Power MOSFET200.090 at VGS = 2.5 V 3.4 Compliant to RoHS Directive 2002/95/ECTSOP-6(1, 2, 5, 6) DTop View1 63 mm52(3) G3 42.85 mm(4) SOrdering

Si3440ADVwww.vishay.comVishay SiliconixN-Channel 150 V (D-S) MOSFETFEATURESTSOP-6 SingleS ThunderFET power MOSFET4D 100 % Rg tested5D Material categorization: 6for definitions of compliance please see www.vishay.com/doc?999123APPLICATIONS DG2 DC/DC convertersD1D Boost converters Top ViewG LED backlightingMarking code:

Si3442CDVVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A)a Qg (Typ.) 100 % Rg and UIS Tested Material categorization:0.027 at VGS = 10 V 8dFor definitions of compliance please see20 0.030 at VGS = 4.5 V 7.5 4.3 nCwww.vishay.com/doc?999120.049 at VGS = 2.5 V 6.1APPLICATIONSTSO

Si3443BDVVishay SiliconixP-Channel 2.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.060 at VGS = - 4.5 V - 4.7 TrenchFET Power MOSFET0.090 at VGS = - 2.7 V 100 % Rg Tested- 20 - 3.8 Compliant to RoHS Directive 2002/95/EC0.100 at VGS = - 2.5 V - 3.7TSOP-6 (4) STop View1 6

Si3445DVVishay SiliconixP-Channel 1.8-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.042 at VGS = - 4.5 V 5.6 TrenchFET Power MOSFETs0.060 at VGS = - 2.5 V - 8 4.7 1.8 V Rated0.080 at VGS = - 1.8 V 2.9 Compliant to RoHS Directive 2002/95/ECTSOP-6 Top View(4) S

Si3447CDVVishay SiliconixP-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.036 at VGS = - 4.5 V - 7.8 TrenchFET Power MOSFET PWM Optimized0.050 at VGS = - 2.5 V - 6.6 12 nC- 12 Compliant to RoHS Directive 2002/95/EC0.068 at VGS = - 1.8 V - 5.6APPLICATIONS

Si3447DVVishay SiliconixP-Channel 1.8-V (G-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.050 @ VGS = -4.5 V "5.2-12 0.070 @ VGS = -2.5 V "4.40.095 @ VGS = -1.8 V "3.8(4) STSOP-6Top View1 6(3) G3 mm523 4(1, 2, 5, 6) D2.85 mmP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-Source Voltage V

Si3443DDVwww.vishay.comVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) a, e Qg (TYP.) PWM optimized0.047 at VGS = -4.5 V -4 100 % Rg tested-20 0.080 at VGS = -2.7 V -4 9 nC Material categorization: 0.090 at VGS = -2.5 V -4For definitions of compliance please see TSOP-6 Singlew

Si3441BDVVishay SiliconixP-Channel 2.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.090 at VGS = - 4.5 V - 2.9- 20 TrenchFET Power MOSFETs0.130 at VGS = - 2.5 V - 2.45 Compliant to RoHS Directive 2002/95/ECTSOP-6(4) STop View1 63 mm52(3) G3 42.85 mmOrdering Infor

Si3440DVVishay SiliconixN-Channel 150-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.375 at VGS = 10 V 1.5 TrenchFET Power MOSFET1500.400 at VGS = 6.0 V 1.4 PWM Optimized for Fast Switching In Small Footprint 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLIC

Si3447BDVVishay SiliconixP-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.040 at VGS = - 4.5 V - 6.0 TrenchFET Power MOSFET: 1.8 V Rated0.053 at VGS = - 2.5 V - 12 - 5.2 Ultra Low On-Resistance0.072 at VGS = - 1.8 V - 4.5 Compliant to RoHS Directive 2002/95/ECAPPL

Si3447CDVVishay SiliconixP-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.036 at VGS = - 4.5 V - 7.8 TrenchFET Power MOSFET PWM Optimized0.050 at VGS = - 2.5 V - 6.6 12 nC- 12 Compliant to RoHS Directive 2002/95/EC0.068 at VGS = - 1.8 V - 5.6APPLICATIONS

Si3441DVVishay SiliconixP-Channel 2.5-V (G-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)b0.10 @ VGS = - 4.5 V -3.3-20200.135 @ VGS = -2.5 V -2.9(4) STSOP-6Top View1 6(3) G3 mm523 4(1, 2, 5, 6) D2.85 mmP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol 5 sec Steady State UnitDrain-Source Voltage VDS -20

Si3445ADVVishay SiliconixP-Channel 1.8-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.042 at VGS = - 4.5 V - 5.8 Compliant to RoHS Directive 2002/95/EC0.060 at VGS = - 2.5 V - 8 - 4.90.080 at VGS = - 1.8 V - 4.2TSOP-6(4) STop View1 63 mm52(3) G3 42.85 mm(1, 2, 5, 6) D

Si3442BDVVishay SiliconixN-Channel 2.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.057 at VGS = 4.5 V 4.2 TrenchFET Power MOSFET200.090 at VGS = 2.5 V 3.4 Compliant to RoHS Directive 2002/95/ECTSOP-6(1, 2, 5, 6) DTop View1 63 mm52(3) G3 42.85 mm(4) SOrdering

New ProductSi3443CDVVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.) Definition TrenchFET Power MOSFET0.060 at VGS = - 4.5 V - 4.7 PWM Optimized0.084 at VGS = - 2.7 V - 3.9 7.53 nC- 20 100 % Rg Tested0.100 at VGS = - 2.5 V - 3.4APPLICATIONS HD

PD- 93795BSi3443DVHEXFET Power MOSFETl Ultra Low On-ResistanceA1 6D Dl P-Channel MOSFETVDSS = -20Vl Surface Mount25DDl Available in Tape & Reell -2.5V Rated34G SRDS(on) = 0.065Top ViewDescriptionThese P-channel MOSFETs from International Rectifierutilize advanced processing techniques to achieve theextremely low on-resistance per silicon area

March 2001 SI3442DV N-Channel Logic Level Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese N-Channel logic level enhancement mode power field4.1 A, 20 V. RDS(ON) = 0.06 @ VGS = 4.5 Veffect transistors are produced using Fairchild's proprietary,RDS(ON) = 0.075 @ VGS =2.7 V.high cell density, DMOS technology. This very high densityprocess is tai

SI3442CDVwww.VBsemi.twN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET0.030 at VGS = 10 V 6 Low On-Resistance30 4.2 nC0.040 at VGS = 4.5 V 6 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTSOP-6APPLICATIONS DC/DC

SI3440DVwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET0.095 at VGS = 10 V 3.2 Low On-Resistance100 4.2 nC0.105 at VGS = 4.5 V 3.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTSOP-6APPLICATIONS