SI3457BDV MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SI3457BDV
Código: 7B*
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 1.14 W
Tensión drenaje-fuente (Vds): 30 V
Tensión compuerta-fuente (Vgs): 20 V
Corriente continua de drenaje (Id): 3.7 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 3 V
Tiempo de elevación (tr): 10 nS
Resistencia drenaje-fuente RDS(on): 0.054 Ohm
Empaquetado / Estuche: TSOP-6
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SI3457BDV Datasheet (PDF)
1.1. si3457bdv.pdf 
Size:181K _vishay
Si3457BDV Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω)ID (A) Available 0.054 at VGS = - 10 V - 5.0 • TrenchFET® Power MOSFETs - 30 0.100 at VGS = - 4.5 V - 3.7 TSOP-6 Top View 1 6 (4) S 3 mm 5 2 (3) G 3 4 2.85 mm (1, 2, 5, 6) D Ordering Information: Si3457BDV-T1-E3 (Lead (
4.1. si3457dv.pdf Size:85K _fairchild_semi
April 2001 Si3457DV Single P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced • –4 A, –30 V. RDS(ON) = 50 mΩ @ VGS = –10 V using Fairchild’s advanced PowerTrench process. It RDS(ON) = 75 mΩ @ VGS = –4.5 V has been optimized for battery power management applications. • Low ga
4.2. si3457dv.pdf Size:70K _vishay
Si3457DV Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS( ) (W) ID (A) VDS (V) rDS(on) (W) ID (A) 0.065 @ VGS = 10 V "4.3 30 30 0.100 @ VGS = 4.5 V "3.4 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 5 2 3 4 (1, 2, 5, 6) D 2.85 mm P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage
4.3. si3457cdv.pdf Size:192K _vishay
New Product Si3457CDV Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) Available 0.074 at VGS = - 10 V - 5.1 • TrenchFET® Power MOSFET - 30 5.1 nC 0.113 at VGS = - 4.5 V - 4.1 APPLICATIONS • Load Switch TSOP-6 (4) S Top View 1 6 3 mm 5 2 (3) G Marking Code
4.4. si3457cd.pdf Size:191K _vishay
New Product Si3457CDV Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (?) ID (A)a Qg (Typ.) Available 0.074 at VGS = - 10 V - 5.1 TrenchFET Power MOSFET - 30 5.1 nC 0.113 at VGS = - 4.5 V - 4.1 APPLICATIONS Load Switch TSOP-6 (4) S Top View 1 6 3 mm 5 2 (3) G Marking Code AT XXX 3 4
Otros transistores... SI3451DV , SI3453DV , SI3454ADV , SI3454CDV , SI3455ADV , SI3456BDV , SI3456CDV , SI3456DDV , IRF4905 , SI3457CDV , SI3458BDV , SI3459BDV , SI3460DDV , SI3460DV , SI3464DV , SI3465DV , SI3467DV .
