SI3457BDV MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SI3457BDV

Código: 7B*

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1.14 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 3.7 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 3 V

Tiempo de elevación (tr): 10 nS

Resistencia drenaje-fuente RDS(on): 0.054 Ohm

Empaquetado / Estuche: TSOP-6

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SI3457BDV Datasheet (PDF)

1.1. si3457bdv.pdf Size:181K _vishay

Si3457BDV Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω)ID (A) Available 0.054 at VGS = - 10 V - 5.0 • TrenchFET® Power MOSFETs - 30 0.100 at VGS = - 4.5 V - 3.7 TSOP-6 Top View 1 6 (4) S 3 mm 5 2 (3) G 3 4 2.85 mm (1, 2, 5, 6) D Ordering Information: Si3457BDV-T1-E3 (Lead (

4.1. si3457dv.pdf Size:85K _fairchild_semi

April 2001 Si3457DV    Single P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced • –4 A, –30 V. RDS(ON) = 50 mΩ @ VGS = –10 V using Fairchild’s advanced PowerTrench process. It RDS(ON) = 75 mΩ @ VGS = –4.5 V has been optimized for battery power management applications. • Low ga

4.2. si3457cd.pdf Size:191K _vishay

New Product Si3457CDV Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY � Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (?) ID (A)a Qg (Typ.) Available 0.074 at VGS = - 10 V - 5.1 � TrenchFET� Power MOSFET - 30 5.1 nC 0.113 at VGS = - 4.5 V - 4.1 APPLICATIONS � Load Switch TSOP-6 (4) S Top View 1 6 3 mm 5 2 (3) G Marking Code AT XXX 3 4

4.3. si3457cdv.pdf Size:192K _vishay

New Product Si3457CDV Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) Available 0.074 at VGS = - 10 V - 5.1 • TrenchFET® Power MOSFET - 30 5.1 nC 0.113 at VGS = - 4.5 V - 4.1 APPLICATIONS • Load Switch TSOP-6 (4) S Top View 1 6 3 mm 5 2 (3) G Marking Code

4.4. si3457dv.pdf Size:70K _vishay

Si3457DV Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS( ) (W) ID (A) VDS (V) rDS(on) (W) ID (A) 0.065 @ VGS = �10 V "4.3 �30 �30 0.100 @ VGS = �4.5 V "3.4 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 5 2 3 4 (1, 2, 5, 6) D 2.85 mm P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage

Otros transistores... GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , IRF250 , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL , FDMS3604S , GWM100-01X1-SMD , FDMS3602AS , GWM120-0075X1-SL .

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