SI3850ADV MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SI3850ADV
Tipo de FET: MOSFET
Polaridad de transistor: NP
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.08 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 1.4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.5 VQgⓘ - Carga de la puerta: 1.1 nC
trⓘ - Tiempo de subida: 16 nS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm
Paquete / Cubierta: TSOP-6
Búsqueda de reemplazo de MOSFET SI3850ADV
SI3850ADV Datasheet (PDF)
si3850adv.pdf
Si3850ADVVishay SiliconixComplementary MOSFET Half-Bridge (N- and P-Channel)FEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.300 at VGS = 4.5 V 1.4 TrenchFET Power MOSFETN-Channel 200.410 at VGS = 3.0 V 1.2 100 % Rg Tested0.640 at VGS = - 4.5 V - 0.96 Compliant to RoHS Directive 2002/95/ECP-Cha
si3850dv.pdf
Si3850DVVishay SiliconixComplementary MOSFET Half-Bridge (N- and P-Channel)FEATURESPRODUCT SUMMARYD 100% Rg TestedVDS (V) rDS(on) (W) ID (A)0.500 @ VGS = 4.5 V 1.2N-Channel 20N-Channel 200.750 @ VGS = 3.0 V 1.01.00 @ VGS = -4.5 V -0.85P Channel 20P-Channel -201.30 @ VGS = -3.0 V -0.75S2TSOP-6Top ViewG2G1 1 6 S1D D5 D2G2 3 4 S2G1Ordering Informat
si3851dv.pdf
Si3851DVVishay SiliconixP-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.200 at VGS = - 10 V 1.8 LITTLE FOOT Plus- 300.360 at VGS = - 4.5 V Compliant to RoHS Directive 2002/95/EC 1.2SCHOTTKY PRODUCT SUMMARY VF (V) VKA (V) IF (A)Diode Forwar
si3853dv.pdf
Si3853DVVishay SiliconixP-Channel 20-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.200 at VGS = - 4.5 V 1.8 LITTLE FOOT Plus- 200.340 at VGS = - 2.5 V Compliant to RoHS Directive 2002/95/EC 1.3SCHOTTKY PRODUCT SUMMARY VF (V) VKA (V) IF (A)Diode Forwa
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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