SI3865DDV Todos los transistores

 

SI3865DDV MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SI3865DDV
   Código: IK
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.83 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 12 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 2.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.054 Ohm
   Paquete / Cubierta: TSOP-6

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SI3865DDV Datasheet (PDF)

 ..1. Size:230K  vishay
si3865ddv.pdf

SI3865DDV
SI3865DDV

Si3865DDVwww.vishay.comVishay SiliconixLoad Switch with Level-ShiftFEATURESPRODUCT SUMMARY Low RDS(on) TrenchFET: 1.5 V ratedVIN (VDS2) (V) RDS(on) ()ID (A) 1.5 V to 12 V input0.054 at VIN = 4.5 V 3.9 1.8 V to 8 V logic level control0.077 at VIN = 2.5 V 3.21.5 to 12 Low profile, small footprint TSOP-6 package0.106 at VIN = 1.8 V 2.80.165 at VIN = 1.

 8.1. Size:200K  vishay
si3865bdv.pdf

SI3865DDV
SI3865DDV

Si3865BDVVishay SiliconixLoad Switch with Level-ShiftFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS2 (V) RDS(on) ()ID (A)Definition0.060 at VIN = 4.5 V 2.9 60 m Low RDS(on) TrenchFET: 1.8 V Rated0.100 at VIN = 2.5 V 1.8 to 8 2.2 1.8 V to 8 V Input0.175 at VIN = 1.8 V 1.7 1.5 V to 8 V Logic Level Control Low Prof

 8.2. Size:213K  vishay
si3865cd.pdf

SI3865DDV
SI3865DDV

New ProductSi3865CDVVishay SiliconixLoad Switch with Level-ShiftFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS2 (V) (VIN)RDS(on) ()ID (A)Definition0.060 at VIN = 4.5 V 2.8 60 m Low RDS(on) TrenchFET0.095 at VIN = 2.5 V 1.8 to 12 2.2 1.8 V to 12 V Input0.130 at VIN = 1.8 V 1.9 1.5 V to 8 V Logic Level Control L

 9.1. Size:201K  vishay
si3867dv.pdf

SI3865DDV
SI3865DDV

Si3867DVVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.051 at VGS = - 4.5 V - 5.1 TrenchFET Power MOSFET0.067 at VGS = - 3.3 V PWM Optimized - 20 - 4.5 Compliant to RoHS Directive 2002/95/EC0.100 at VGS = - 2.5 V - 3.7APPLICATIONS DC/DC- HD

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