SI3865DDV Todos los transistores

 

SI3865DDV MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SI3865DDV

Tipo de FET: MOSFET

Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.83 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 12 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 2.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.054 Ohm

Encapsulados: TSOP-6

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SI3865DDV datasheet

 ..1. Size:230K  vishay
si3865ddv.pdf pdf_icon

SI3865DDV

Si3865DDV www.vishay.com Vishay Siliconix Load Switch with Level-Shift FEATURES PRODUCT SUMMARY Low RDS(on) TrenchFET 1.5 V rated VIN (VDS2) (V) RDS(on) ( )ID (A) 1.5 V to 12 V input 0.054 at VIN = 4.5 V 3.9 1.8 V to 8 V logic level control 0.077 at VIN = 2.5 V 3.2 1.5 to 12 Low profile, small footprint TSOP-6 package 0.106 at VIN = 1.8 V 2.8 0.165 at VIN = 1.

 8.1. Size:200K  vishay
si3865bdv.pdf pdf_icon

SI3865DDV

Si3865BDV Vishay Siliconix Load Switch with Level-Shift FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS2 (V) RDS(on) ( )ID (A) Definition 0.060 at VIN = 4.5 V 2.9 60 m Low RDS(on) TrenchFET 1.8 V Rated 0.100 at VIN = 2.5 V 1.8 to 8 2.2 1.8 V to 8 V Input 0.175 at VIN = 1.8 V 1.7 1.5 V to 8 V Logic Level Control Low Prof

 8.2. Size:213K  vishay
si3865cd.pdf pdf_icon

SI3865DDV

New Product Si3865CDV Vishay Siliconix Load Switch with Level-Shift FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS2 (V) (VIN)RDS(on) ( )ID (A) Definition 0.060 at VIN = 4.5 V 2.8 60 m Low RDS(on) TrenchFET 0.095 at VIN = 2.5 V 1.8 to 12 2.2 1.8 V to 12 V Input 0.130 at VIN = 1.8 V 1.9 1.5 V to 8 V Logic Level Control L

 9.1. Size:201K  vishay
si3867dv.pdf pdf_icon

SI3865DDV

Si3867DV Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.051 at VGS = - 4.5 V - 5.1 TrenchFET Power MOSFET 0.067 at VGS = - 3.3 V PWM Optimized - 20 - 4.5 Compliant to RoHS Directive 2002/95/EC 0.100 at VGS = - 2.5 V - 3.7 APPLICATIONS DC/DC - HD

Otros transistores... SI3499DV , SI3552DV , SI3585CDV , SI3586DV , SI3588DV , SI3590DV , SI3805DV , SI3850ADV , 5N60 , SI3867DV , SI3879DV , SI3900DV , SI3932DV , SI3981DV , SI3993CDV , SI4004DY , SI4010DY .

History: NCEP018N85LL | SML60A16 | PSMN041-80YL | BRCS20N03IP

 

 

 

 

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