SI4390DY MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SI4390DY
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.4 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 8.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.8 V
   Qgⓘ - Carga de la puerta: 10 nC
   trⓘ - Tiempo de subida: 6 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0095 Ohm
   Paquete / Cubierta: SO-8

Búsqueda de reemplazo de MOSFET SI4390DY

SI4390DY Datasheet (PDF)

..1. Size:219K vishay
si4390dy.pdf

Si4390DYVishay SiliconixN-Channel Qg, Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.0095 at VGS = 10 V 12.5 Extremely Low Qgd for Switching Losses300.0135 at VGS = 4.5 V 10.5 TrenchFET Power MOSFET 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS

9.1. Size:93K vishay
si4392ady.pdf

Si4392ADYNew ProductVishay SiliconixN-Channel Reduced Qg, Fast Switching WFETFEATURESPRODUCT SUMMARY Extremely Low Qgd WFET Technology for VDS (V) rDS(on) ()ID (A)a Qg (Typ)Low Switching LossesRoHS0.0075 at VGS = 10 V 21.5 TrenchFET Power MOSFETCOMPLIANT12 nC30 100 % Rg Tested0.0115 at VGS = 4.5 V 17.4APPLICATIONS High-Side DC/DC Conv

9.2. Size:239K vishay
si4398dy.pdf

Si4398DYVishay SiliconixN-Channel Reduced Qg, Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.0028 at VGS = 10 V 2520 Extremely Low Qgd for Switching Losses0.0040 at VGS = 4.5 V 22 Ultra-Low On-Resistance 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPP

9.3. Size:81K vishay
si4394dy.pdf

Si4394DYNew ProductVishay SiliconixN-Channel Reduced Qgd, Fast Switching WFETFEATURESPRODUCT SUMMARY Extremely Low Qgd WFET Technology forVDS (V) rDS(on) ()ID (A)Switching LossesRoHS0.00825 at VGS = 10 V 1530 TrenchFET Power MOSFET COMPLIANT0.00975 at VGS = 4.5 V 14 100 % Rg TestedAPPLICATIONS High-Side DC/DC Conversion- Notebook- S

9.4. Size:78K vishay
si4392dy.pdf

Si4392DYVishay SiliconixN-Channel Reduced Qg, Fast Switching WFETFEATURESPRODUCT SUMMARY Extremely Low Qgd WFET Technology for VDS (V) rDS(on) ()ID (A)Switching LossesAvailable0.00975 at VGS = 10 V 12.530 TrenchFET Power MOSFETRoHS*0.01375 at VGS = 4.5 V 10.0COMPLIANT 100 % Rg Tested APPLICATIONS High-Side DC/DC Conversion- Notebook

9.5. Size:87K vishay
si4396dy.pdf

Si4396DYVishay SiliconixN-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.0115 at VGS = 10 V 1630 TrenchFET Power MOSFET13.3 nC0.016 at VGS = 4.5 V 12.7 100 % Rg and UIS TestedSCHOTTKY AND BODY DIODE PRODUCT APPLICATIONSSUMMARY Noteb

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