IRFS142 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFS142
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 65 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Id|ⓘ - Corriente continua de drenaje: 17.3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
Paquete / Cubierta: TO3P
Búsqueda de reemplazo de MOSFET IRFS142
IRFS142 Datasheet (PDF)
irfs140a.pdf
IRFS140AAdvanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.052 Rugged Gate Oxide Technology Lower Input CapacitanceID = 23 A Improved Gate Charge Extended Safe Operating AreaTO-3PF 175 C Operating TemperatureA (Max.) @ VDS = 100V Lower Leakage Current : 10 Lower RDS(ON) : 0.041 (Typ.)1231.Gate 2. Drain 3. Sour
irfs150a.pdf
IRFS150AAdvanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input CapacitanceID = 31 A Improved Gate Charge Extended Safe Operating AreaTO-3PF 175 C Operating TemperatureA (Max.) @ VDS = 100V Lower Leakage Current : 10 Lower RDS(ON) : 0.032 (Typ.)1231.Gate 2. Drain 3. Sourc
irfs11n50apbf.pdf
PD- 95232IRFS11N50APbF Lead-Free04/29/04Document Number: 91286 www.vishay.com1IRFS11N50APbFDocument Number: 91286 www.vishay.com2IRFS11N50APbFDocument Number: 91286 www.vishay.com3IRFS11N50APbFDocument Number: 91286 www.vishay.com4IRFS11N50APbFDocument Number: 91286 www.vishay.com5IRFS11N50APbFDocument Number: 91286 www.vishay.com6IRFS11N50APb
irfs11n50a.pdf
PD- 93797SMPS MOSFETIRFS11N50AHEXFET Power MOSFETApplicationsVDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 0.52 11A High speed power switchingBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and dynamicdv/dt Ruggedness Fully Characterized Capacitance andD 2 PakAvalanche Voltage
irfb17n20d irfs17n20d irfsl17n20d.pdf
PD- 93902AIRFB17N20D IRFS17N20DSMPS MOSFET IRFSL17N20DHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High frequency DC-DC converters200V 0.17 16ABenefits Low Gate-to-Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001) Fully Characterized Avalanche Voltageand CurrentT
irfs17n20dpbf.pdf
PD- 95325IRFB17N20DPbF IRFS17N20DPbFSMPS MOSFET IRFSL17N20DPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters200V 0.17 16Al Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avalanch
irfs11n50apbf sihfs11n50a.pdf
IRFS11N50A, SiHFS11N50AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 500DefinitionRDS(on) ()VGS = 10 V 0.52 Low Gate Charge Qg results in Simple DriveQg (Max.) (nC) 52RequirementQgs (nC) 13 Improved Gate, Avalanche and Dynamic dV/dtQgd (nC) 18 Ruggedness Fully Characterized Capacitance and Avalanc
irfs11n50a.pdf
iscN-Channel MOSFET Transistor IRFS11N50AFEATURESLow drain-source on-resistance:RDS(ON) =0.52 (MAX)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL
Otros transistores... IRFS11N50A , IRFS130 , IRFS131 , IRFS132 , IRFS133 , IRFS140 , IRFS140A , IRFS141 , IRF9640 , IRFS143 , IRFS150 , IRFS150A , IRFS151 , IRFS152 , IRFS153 , IRFS230 , IRFS231 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918