SI4409DY MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Si4409DY Vishay Siliconix P-Channel 150-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 1.2 at VGS = - 10 V - 1.3 TrenchFET Power MOSFET - 150 4.8 nC 100 % UIS Tested 1.3 at VGS = - 6 V - 1.2 APPLICATIONS Active Clamp Switch Isolated DC/DC Converters S SO-8 S 1 8 D

Si4403BDY Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.017 at VGS = - 4.5 V - 9.9 TrenchFET Power MOSFETs 0.023 at VGS = - 2.5 V - 8.5 - 20 Compliant to RoHS Directive 2002/95/EC 0.032 at VGS = - 1.8 V - 7.2 SO-8 S S 1 8 D S D 2 7 S 3 6 D G G

Si4401BDY Vishay Siliconix P-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.014 at VGS = - 10 V - 10.5 TrenchFET Power MOSFET - 40 40 0.021 at VGS = - 4.5 V - 8.7 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC SO-8 S 1 8 D S S D 2 7 S 3 6 D G G D 4

Si4401BDY Vishay Siliconix P-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.014 at VGS = - 10 V - 10.5 TrenchFET Power MOSFET - 40 40 0.021 at VGS = - 4.5 V - 8.7 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC SO-8 S 1 8 D S S D 2 7 S 3 6 D G G D 4

Si4404DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.0065 at VGS = 10 V 23 TrenchFET Power MOSFET 30 0.008 at VGS = 4.5 V 17 100 % Rg Tested SO-8 D SD 1 8 SD 2 7 SD 3 6 G GD 4 5 Top View S Ordering Information Si4404DY-T1-E3 (Lead (Pb)

Si4401DDY Vishay Siliconix P-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.015 at VGS = - 10 V - 16.1 TrenchFET Power MOSFET - 40 33 nC 0.022 at VGS = - 4.5 V - 13.3 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS

Si4401DY Vishay Siliconix P-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.0155 at VGS = - 10 V - 10.5 TrenchFET Power MOSFETs - 40 0.0225 at VGS = - 4.5 V - 8.7 S SO-8 SD 1 8 S D 2 7 G SD 3 6 G D 4 5 Top View D Ordering Information Si4401DY-T1-E3 (Lead (Pb

Si4403BDY Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.017 at VGS = - 4.5 V - 9.9 TrenchFET Power MOSFETs 0.023 at VGS = - 2.5 V - 8.5 - 20 Compliant to RoHS Directive 2002/95/EC 0.032 at VGS = - 1.8 V - 7.2 SO-8 S S 1 8 D S D 2 7 S 3 6 D G G

Si4408DY Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.0045 at VGS = 10 V 21 TrenchFET Power MOSFET 20 0.0068 at VGS = 4.5 V 17 PWM Optimized for Fast Switching Low Switching Losses Low Gate Drive Losses 100 % Rg Tested APPLICATIONS

Si4401DDY Vishay Siliconix P-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.015 at VGS = - 10 V - 16.1 TrenchFET Power MOSFET - 40 33 nC 0.022 at VGS = - 4.5 V - 13.3 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS

Si4403DY New Product Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFETS VDS (V) rDS(on) (W) ID (A) APPLICATIONS 0.017 @ VGS = 4.5 V 9 D Load Switch 20 0.023 @ VGS = 2.5 V 7 Game Stations 0.032 @ VGS = 1.8 V 6 Notebooks Desktops S SO-8 SD 1 8 G S D 2 7 SD 3 6 G D 4 5 Top View D P-Channel

Si4403DDY www.vishay.com Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES SO-8 Single D TrenchFET Gen III p-channel power MOSFET D 5 D 6 1.8 V rated RDS(on) D 7 100% Rg tested 8 Material categorization for definitions of compliance please see www.vishay.com/doc?99912 4 G 3 3 APPLICATIONS S S S 2 2 S S 1 1 Adapter switch S Top View

New Product Si4403CDY Vishay Siliconix P-Channel 1.8 V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)d Qg (Typ.) Definition 0.0155 at VGS = - 4.5 V - 13.4 TrenchFET Power MOSFET - 20 0.0195 at VGS = - 2.5 V - 12 36.5 nC 100 % Rg Tested 0.0250 at VGS = - 1.8 V - 10.5 100 % UIS Tested Compliant to

SI4405DY-T1 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.011 at VGS = - 10 V - 13.5 100 % Rg Tested RoHS - 30 29.5 nC COMPLIANT 100 % UIS Tested 0.015 at VGS = - 4.5 V - 11.6 APPLICATIONS Load Switch Notebook Adaptor Switch SO-8 S S 1 8 D S D 2 7

SI4401BDY-T1 www.VBsemi.tw P-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.010 at VGS = - 10 V - 16.1 100 % Rg Tested - 40 33 nC 0.014 at VGS = - 4.5 V - 13.3 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS S Load Switch POL SO-8 G SD

SI4401DDY-T1-GE3 www.VBsemi.tw P-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.010 at VGS = - 10 V - 16.1 100 % Rg Tested - 40 33 nC 0.014 at VGS = - 4.5 V - 13.3 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS S Load Switch POL SO-8 G