SI4409DY MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SI4409DY
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 1.3 nC
   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 25 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm
   Paquete / Cubierta: SO-8

Búsqueda de reemplazo de MOSFET SI4409DY

SI4409DY Datasheet (PDF)

..1. Size:255K vishay
si4409dy.pdf

Si4409DYVishay SiliconixP-Channel 150-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition1.2 at VGS = - 10 V - 1.3 TrenchFET Power MOSFET- 150 4.8 nC 100 % UIS Tested 1.3 at VGS = - 6 V - 1.2APPLICATIONS Active Clamp Switch Isolated DC/DC ConvertersS SO-8S1 8 D

9.1. Size:224K vishay
si4406dy.pdf

Si4406DYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.0045 at VGS = 10 V 20 TrenchFET Power MOSFET300.0055 at VGS = 4.5 V Optimized for Low Side Synchronous 17Rectifier Operation 100 % Rg TestedAPPLICATIONS DC/DC ConvertersSO-8

9.2. Size:225K vishay
si4403bdy.pdf

Si4403BDYVishay SiliconixP-Channel 1.8-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.017 at VGS = - 4.5 V - 9.9 TrenchFET Power MOSFETs 0.023 at VGS = - 2.5 V - 8.5- 20 Compliant to RoHS Directive 2002/95/EC0.032 at VGS = - 1.8 V - 7.2SO-8 SS1 8 D S D 2 7 S3 6 D GG

9.3. Size:246K vishay
si4401bd.pdf

Si4401BDYVishay SiliconixP-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.014 at VGS = - 10 V - 10.5 TrenchFET Power MOSFET- 40 400.021 at VGS = - 4.5 V - 8.7 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECSO-8S1 8 D SS D2 7S3 6 DGG D4

9.4. Size:248K vishay
si4401bdy.pdf

9.5. Size:230K vishay
si4404dy.pdf

Si4404DYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.0065 at VGS = 10 V 23 TrenchFET Power MOSFET300.008 at VGS = 4.5 V 17 100 % Rg TestedSO-8 DSD1 8 SD2 7 SD3 6 GGD4 5 Top View SOrdering Information: Si4404DY-T1-E3 (Lead (Pb)

9.6. Size:251K vishay
si4401ddy.pdf

Si4401DDYVishay SiliconixP-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.015 at VGS = - 10 V - 16.1 TrenchFET Power MOSFET- 40 33 nC0.022 at VGS = - 4.5 V - 13.3 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS

9.7. Size:245K vishay
si4401dy.pdf

Si4401DYVishay SiliconixP-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.0155 at VGS = - 10 V - 10.5 TrenchFET Power MOSFETs- 400.0225 at VGS = - 4.5 V - 8.7S SO-8 SD1 8 S D 2 7 G SD3 6 G D 4 5 Top View D Ordering Information: Si4401DY-T1-E3 (Lead (Pb

9.8. Size:223K vishay
si4403bd.pdf

9.9. Size:224K vishay
si4408dy.pdf

Si4408DYVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.0045 at VGS = 10 V 21 TrenchFET Power MOSFET200.0068 at VGS = 4.5 V 17 PWM Optimized for Fast Switching Low Switching Losses Low Gate Drive Losses 100 % Rg Tested APPLICATIONS

9.10. Size:248K vishay
si4401dd.pdf

9.11. Size:44K vishay
si4403dy.pdf

Si4403DYNew ProductVishay SiliconixP-Channel 1.8-V (G-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETSVDS (V) rDS(on) (W) ID (A)APPLICATIONS0.017 @ VGS = 4.5 V9D Load Switch20 0.023 @ VGS = 2.5 V 7 Game Stations0.032 @ VGS = 1.8 V 6 Notebooks DesktopsSSO-8SD1 8GS D2 7SD3 6G D4 5Top ViewDP-Channel

9.12. Size:256K vishay
si4403ddy.pdf

Si4403DDYwww.vishay.comVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESSO-8 SingleD TrenchFET Gen III p-channel power MOSFETD 5D 6 1.8 V rated RDS(on)D 7 100% Rg tested8 Material categorization: for definitions of compliance please see www.vishay.com/doc?999124G33APPLICATIONSSSS22SS11 Adapter switchSTop View

9.13. Size:235K vishay
si4403cdy.pdf

New ProductSi4403CDYVishay SiliconixP-Channel 1.8 V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.0155 at VGS = - 4.5 V - 13.4 TrenchFET Power MOSFET- 20 0.0195 at VGS = - 2.5 V - 12 36.5 nC 100 % Rg Tested0.0250 at VGS = - 1.8 V - 10.5 100 % UIS Tested Compliant to

9.14. Size:850K cn vbsemi
si4405dy-t1.pdf

SI4405DY-T1www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.011 at VGS = - 10 V - 13.5 100 % Rg TestedRoHS- 30 29.5 nCCOMPLIANT 100 % UIS Tested0.015 at VGS = - 4.5 V - 11.6APPLICATIONS Load Switch Notebook Adaptor SwitchSO-8 S S1 8 DS D2 7

9.15. Size:874K cn vbsemi
si4401bdy-t1.pdf

SI4401BDY-T1www.VBsemi.twP-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.010 at VGS = - 10 V - 16.1 100 % Rg Tested- 40 33 nC0.014 at VGS = - 4.5 V - 13.3 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSS Load Switch POLSO-8GSD

9.16. Size:827K cn vbsemi
si4401ddy-t1-ge3.pdf

SI4401DDY-T1-GE3www.VBsemi.twP-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.010 at VGS = - 10 V - 16.1 100 % Rg Tested- 40 33 nC0.014 at VGS = - 4.5 V - 13.3 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSS Load Switch POLSO-8G

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