SI4436DY Datasheet. Equivalente

 ..1. Size:269K  vishay
 si4436dy.pdf

New Product Si4436DY Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition TrenchFET Power MOSFET 0.036 at VGS = 10 V 8 60 10.5 nC Optimized for Low Side Synchronous 0.043 at VGS = 4.5 V 8 Rectifier Operation 100 % Rg and UIS Tested APPLICATIONS

 9.1. Size:85K  international rectifier
 si4435dy.pdf

PD- 93768A Si4435DY HEXFET Power MOSFET Ultra Low On-Resistance A 1 8 S D P-Channel MOSFET VDSS = -30V 2 7 Surface Mount S D Available in Tape & Reel 3 6 S D 4 5 G D RDS(on) = 0.020 Top View Description These P-channel HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon

 9.2. Size:93K  fairchild semi
 si4435dy.pdf

October 2001 SI4435DY 30V P-Channel PowerTrench MOSFET General Description Features This P MOSFET is a rugged gate version of -Channel 8.8 A, 30 V R = 20 m @ V = 10 V DS(ON) GS Fairchild Semiconductor s advanced PowerTrench R = 35 m @ V = 4.5 V DS(ON) GS process. It has been optimized for power management applications requiring a wide range of gave

 9.3. Size:60K  vishay
 si4433dy.pdf

Si4433DY Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A) D Fast Switching D 100% Rg Tested 0.110 @ VGS = -4.5 V -3.9 -20 0.160 @ VGS = -2.5 V -3.2 APPLICATION 0.240 @ VGS = -1.8 V -2.6 D DC-DC Conversion D Asynchronous Buck Converter D Voltage Inverter S SO-8 SD 1 8 S D 2 7 G SD 3 6 G D 4 5

 9.4. Size:236K  vishay
 si4438dy.pdf

Si4438DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.0027 at VGS = 10 V 36 TrenchFET Power MOSFET 30 41 nC 0.004 at VGS = 4.5 V 29 100 % Rg Tested APPLICATIONS DC-to-DC and AC-to-DC Oring Diode Applications SO-8 D SD 1 8 SD 2 7

 9.5. Size:50K  vishay
 si4430dy.pdf

Si4430DY New Product Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.004 (typ)@ VGS = 10 V "23 30 30 0.008 @ VGS = 4.5 V "17 D SO-8 SD 1 8 G SD 2 7 SD 3 6 GD 4 5 Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS 30 V V Ga

 9.6. Size:229K  vishay
 si4430bdy.pdf

Si4430BDY Vishay Siliconix N-Channel 30-V MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Available 0.0045 at VGS = 10 V 20 TrenchFET Power MOSFETs 30 24 0.006 at VGS = 4.5 V 17 100 % Rg Tested SO-8 D S 1 8 D S D 2 7 S 3 6 D G D 4 5 G Top View S Ordering Information Si4430BDY-T1-E3 (Le

 9.7. Size:80K  vishay
 si4435dytr.pdf

PD- 93768A Si4435DY HEXFET Power MOSFET Ultra Low On-Resistance A 1 8 S D P-Channel MOSFET VDSS = -30V 2 7 Surface Mount S D Available in Tape & Reel 3 6 S D 4 5 G D RDS(on) = 0.020 Top View Description These P-channel HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon

 9.8. Size:249K  vishay
 si4434dy.pdf

Si4434DY Vishay Siliconix N-Channel 250-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RrDS(on) ( )ID (A) Definition 0.155 at VGS = 10 V 3.0 PWM-Optimized TrenchFET Power MOSFET 250 0.162 at VGS = 6.0 V 2.9 100 % Rg Tested Avalanche Tested APPLICATIONS Primary Side Switch In - Telecom Power Supplies - D

 9.9. Size:75K  vishay
 si4431ady.pdf

Si4431ADY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A) 0.030 @ VGS = 10 V 7.2 30 30 0.052 @ VGS = 4.5 V 5.5 S SO-8 SD 1 8 G S D 2 7 SD 3 6 G D 4 5 Top View D Ordering Information Si4431ADY-T1 P-Channel MOSFET Si4431ADY-T1 E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS (TA

 9.10. Size:273K  vishay
 si4435ddy.pdf

New Product Si4435DDY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition TrenchFET Power MOSFET 0.024 at VGS = - 10 V - 11.4 - 30 15 nC Compliant to RoHS Directive 2002/95/EC 0.035 at VGS = - 4.5 V - 9.4 APPLICATIONS Load Switches Battery Swit

 9.11. Size:271K  vishay
 si4435dd.pdf

New Product Si4435DDY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition TrenchFET Power MOSFET 0.024 at VGS = - 10 V - 11.4 - 30 15 nC Compliant to RoHS Directive 2002/95/EC 0.035 at VGS = - 4.5 V - 9.4 APPLICATIONS Load Switches Battery Swit

 9.12. Size:70K  vishay
 si4431dy.pdf

Si4431DY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A) D 100% UIS Tested 0.040 @ VGS = 10 V "5.8 30 30 0.070 @ VGS = 4.5 V "4.5 S SO-8 SD 1 8 G S D 2 7 SD 3 6 G D 4 5 Top View D Ordering Information Si4431DY-T1 P-Channel MOSFET Si4431DY-T1 E3 (Lead (Pb)-Free) ABSOLUTE MAXIMUM RAT

 9.13. Size:78K  vishay
 si4435dy.pdf

Si4435DY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY D Lead (Pb)-Free Version is RoHS VDS (V) rDS(on) (W) ID (A) Compliant 0.02 @ VGS = 10 V 8.0 30 30 0.035 @ VGS = 4.5 V 6.0 S SO-8 SD 1 8 G S D 2 7 SD 3 6 G D 4 5 D Top View P-Channel MOSFET Ordering Information Si4435DY-T1 REV A Si4435DY-T1 A E3 (Lead (Pb)-Free) ABSOLU

 9.14. Size:224K  vishay
 si4431bd.pdf

Si4431BDY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.030 at VGS = - 10 V - 7.5 TrenchFET Power MOSFETs - 30 0.050 at VGS = - 4.5 V - 5.8 SO-8 S 1 8 D S S D 2 7 S 3 6 D G G D 4 5 Top View D Ordering Information Si4431BDY-T1-E3 (Lead (Pb)-free)

 9.15. Size:271K  vishay
 si4431cdy.pdf

New Product Si4431CDY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.032 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.049 at VGS = - 4.5 V - 5.8 APPLICATIONS Load Switch Battery Switch SO-8 S S 1 8 D S

 9.16. Size:226K  vishay
 si4430bd.pdf

Si4430BDY Vishay Siliconix N-Channel 30-V MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Available 0.0045 at VGS = 10 V 20 TrenchFET Power MOSFETs 30 24 0.006 at VGS = 4.5 V 17 100 % Rg Tested SO-8 D S 1 8 D S D 2 7 S 3 6 D G D 4 5 G Top View S Ordering Information Si4430BDY-T1-E3 (Le

 9.17. Size:107K  vishay
 si4435dypbf si4435dytrpbf.pdf

PD- 95133 Si4435DYPbF HEXFET Power MOSFET l Ultra Low On-Resistance A 1 8 S D l P-Channel MOSFET VDSS = -30V 2 7 l Surface Mount S D l Available in Tape & Reel 3 6 S D l Lead-Free 4 5 G D RDS(on) = 0.020 Top View Description These P-channel HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resis

 9.18. Size:186K  vishay
 si4435fdy.pdf

Si4435FDY www.vishay.com Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES SO-8 Single D TrenchFET Gen III p-channel power MOSFET D 5 D 6 100% Rg tested D 7 Material categorization 8 for definitions of compliance please see www.vishay.com/doc?99912 4 APPLICATIONS S G 3 3 Adapter switch S S 2 2 S S 1 1 Load switch S Top View DC

 9.19. Size:269K  vishay
 si4431cd.pdf

New Product Si4431CDY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.032 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.049 at VGS = - 4.5 V - 5.8 APPLICATIONS Load Switch Battery Switch SO-8 S S 1 8 D S

 9.20. Size:157K  vishay
 si4431bdy.pdf

Si4431BDY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.030 at VGS = - 10 V - 7.5 TrenchFET Power MOSFETs - 30 0.050 at VGS = - 4.5 V - 5.8 SO-8 S 1 8 D S S D 2 7 S 3 6 D G G D 4 5 Top View D Ordering Information Si4431BDY-T1-E3 (Lead (Pb)-free)

 9.21. Size:224K  vishay
 si4435bdy.pdf

Si4435BDY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.020 at VGS = - 10 V - 9.1 TrenchFET Power MOSFET - 30 0.035 at VGS = - 4.5 V Advanced High Cell Density Process - 6.9 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switches B

 9.22. Size:107K  infineon
 si4435dypbf.pdf

PD- 95133 Si4435DYPbF HEXFET Power MOSFET l Ultra Low On-Resistance A 1 8 S D l P-Channel MOSFET VDSS = -30V 2 7 l Surface Mount S D l Available in Tape & Reel 3 6 S D l Lead-Free 4 5 G D RDS(on) = 0.020 Top View Description These P-channel HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resis

 9.23. Size:464K  kexin
 si4435dy.pdf

SMD Type MOSFET SMD Type P-Channel MOSFET SI4435DY (KI4435DY) SOP-8 Features VDS=-30V RDS(on)=0.02 @VGS=-10V 1.50 0.15 RDS(on)=0.035 @VGS=-4.5V S S D 1 8 G S D 2 7 S D 3 6 G D 4 5 D Top View Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS 20 V Continuous Drain Current ID

 9.24. Size:464K  kexin
 si4435dy ki4435dy.pdf

SMD Type MOSFET SMD Type P-Channel MOSFET SI4435DY (KI4435DY) SOP-8 Features VDS=-30V RDS(on)=0.02 @VGS=-10V 1.50 0.15 RDS(on)=0.035 @VGS=-4.5V S S D 1 8 G S D 2 7 S D 3 6 G D 4 5 D Top View Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS 20 V Continuous Drain Current ID

 9.25. Size:3798K  cn szxunrui
 si4430.pdf

SOP-8 Plastic-Encapsulate MOSFETS SI4430 N-Channel Enhancement Mode Power MOSFET SO-8L D D D Description D The SI4430 uses advanced trench technology to provide G G S excellent RDS(ON) and low gate charge . The complementary S S S S SO-8 S Pin 1 MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Equivalent Cir cuit D

 9.26. Size:830K  cn vbsemi
 si4431cdy-t1-e3.pdf

SI4431CDY-T1-E3 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.024 at VGS = - 4.5 V - 7.8 APPLICATIONS Load Switch Battery Switch S SO-8 S 1 8 D G S D 2 7 S

 9.27. Size:830K  cn vbsemi
 si4435dy-t1-e3.pdf

SI4435DY-T1-E3 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.024 at VGS = - 4.5 V - 7.8 APPLICATIONS Load Switch Battery Switch S SO-8 S 1 8 D G S D 2 7 S 3

 9.28. Size:1433K  cn vbsemi
 si4435bdy.pdf

SI4435BDY www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.024 at VGS = - 4.5 V - 7.8 APPLICATIONS Load Switch Battery Switch S SO-8 S 1 8 D G S D 2 7 S 3 6 D