SI4462DY MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Si4462DY Vishay Siliconix N-Channel 200-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.480 at VGS = 10 V 1.50 TrenchFET Power MOSFET 200 0.510 at VGS = 6.0 V 1.45 PWM Optimized for fast Switching Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D SO-

Si4464DY Vishay Siliconix N-Channel 200-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.240 at VGS = 10 V 2.2 TrenchFET Power MOSFET 200 0.260 at VGS = 6.0 V 2.1 PWM Optimized for Low Qg and Low Rg Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D SO

Si4467DY Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.011 @ VGS = 4.5 V "12 12 0.014 @ VGS = 2.5 V "11 12 0.020 @ VGS = 1.8 V "9 S S S SO-8 SD 1 8 G SD 2 7 SD 3 6 GD 4 5 Top View D D D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage V

New Product Si4463CDY Vishay Siliconix P-Channel 2.5 V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)d Qg (Typ.) Definition 0.008 at VGS = - 10 V - 18.6 TrenchFET Power MOSFET - 20 0.010 at VGS = - 4.5 V - 16.6 54 nC 100 % Rg Tested 0.014 at VGS = - 2.5 V - 14 100 % UIS Tested Compliant to RoHS

Si4463BDY Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.011 at VGS = - 10 V - 13.7 TrenchFET Power MOSFETs 0.014 at VGS = - 4.5 V - 20 - 12.3 0.020 at VGS = - 2.5 V - 10.3 S SO-8 S 1 8 D G S D 2 7 3 6 SD G D 4 5 Top View D Ordering Information Si4

Si4465ADY Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)b Qg (Typ.) Available 0.009 at VGS = - 4.5 V - 13.7 TrenchFET Power MOSFET 1.8 V Rated 0.011 at VGS = - 2.5 V - 12.4 55 nC - 8 100 % Rg Tested 0.016 at VGS = - 1.8 V - 10 S SO-8 SD 1 8 G S D 2 7 SD

Si4465DY Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.009 @ VGS = 4.5 V 14 8 0.011 @ VGS = 2.5 V 12 0.016 @ VGS = 1.8 V 10 S SO-8 SD 1 8 G S D 2 7 SD 3 6 G D 4 5 Top View D Ordering Information Si4465DY-T1 P-Channel MOSFET Si4465DY-T1 E3 (Lead (Pb) free) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTH

Si4466DY Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.009 at VGS = 4.5 V 13.5 TrenchFET Power MOSFETs 20 0.013 at VGS = 2.5 V 11 Compliant to RoHS Directive 2002/95/EC D SO-8 S D 1 8 S D 2 7 G 3 6 S D G D 4 5 Top View S Ordering Infor

Si4463DY Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY FEATURES VDS (V) rDS(on) (W) ID (A) D Lead (Pb)-Free Version is RoHS Compliant Available 0.014 @ VGS = -4.5 V -13 -20 -20 0.020 @ VGS = -2.5 V -11 S SO-8 SD 1 8 G S D 2 7 SD 3 6 G D 4 5 D Top View P-Channel MOSFET Ordering Information Si4463DY-T1 Si4463DY-T1 E3 (Lead (Pb)-Free) ABSOLUTE MAXIMUM

Si4463BDY Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.011 at VGS = - 10 V - 13.7 TrenchFET Power MOSFETs 0.014 at VGS = - 4.5 V - 20 - 12.3 0.020 at VGS = - 2.5 V - 10.3 S SO-8 S 1 8 D G S D 2 7 3 6 SD G D 4 5 Top View D Ordering Information Si4

SMD Type MOSFET P-Channel MOSFET SI4463BDY (KI4463BDY) SOP-8 Features VDS (V) =-20V ID =-13.7 A (VGS =-10V) 1.50 0.15 RDS(ON) 11m (VGS =-10V) RDS(ON) 14m (VGS =-4.5V) RDS(ON) 20m (VGS =-2.5V) 5 Drain 1 Source 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate S G D Absolute Maximum Ratings Ta = 25 Parameter Symbol 10 Secs

Si4463CDY www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.011 at VGS = - 10 V - 13.5 100 % Rg Tested RoHS - 30 29.5 nC COMPLIANT 100 % UIS Tested 0.015 at VGS = - 4.5 V - 11.6 APPLICATIONS Load Switch Notebook Adaptor Switch SO-8 S S 1 8 D S D 2 7 G

SI4463BDY-T1 www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition a 0.015 at VGS = - 4.5 V TrenchFET Power MOSFET - 13 a 100 % Rg Tested 0.026 at VGS = - 2.5 V - 20 20 nC - 10 Built in ESD Protection with Zener Diode 0.065 at VGS = - 1.8 V - 8 Typi

SI4465ADY-T1-E3 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.011 at VGS = - 10 V - 13.5 100 % Rg Tested RoHS - 30 29.5 nC COMPLIANT 100 % UIS Tested 0.015 at VGS = - 4.5 V - 11.6 APPLICATIONS Load Switch Notebook Adaptor Switch SO-8 S S 1 8 D S D 2

SI4466DY-T1 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.004 at VGS = 10 V 18 30 6.8 nC Optimized for High-Side Synchronous 0.005 at VGS = 4.5 V 16 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch