SI4488DY MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Si4488DY Vishay Siliconix N-Channel 150-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.050 at VGS = 10 V 150 5.0 TrenchFET Power MOSFETs Compliant to RoHS Directive 2002/95/EC D SO-8 S D 1 8 S D 2 7 G S D 3 6 G D 4 5 Top View S Ordering Information Si4488DY-T1-E3 (Lead (Pb)-fr

Si4486EY Vishay Siliconix N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.025 at VGS = 10 V 7.9 100 TrenchFET Power MOSFETs 0.028 at VGS = 6.0 V 7.5 175 C Maximum Junction Temperature PWM Optimized Compliant to RoHS Directive 2002/95/EC D SO-8 S D 1 8 S D 2

Si4483EDY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.0085 at VGS = - 10 V - 14 - 30 TrenchFET Power MOSFET 0.014 at VGS = - 4.5 V - 11 ESD Protection 3000 V APPLICATIONS Notebook PC - Load Switch - Adapter Switch S SO-8 S D 1 8 S D 2 7 S D

Si4483ADY Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.0088 at VGS = - 10 V - 19.2 TrenchFET Power MOSFET - 30 44.8 nC 0.0153 at VGS = - 4.5 V - 14.6 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS

Si4480EY Vishay Siliconix N-Channel 80-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.035 @ VGS = 10 V 6.2 80 80 0.040 @ VGS = 6.0 V 5.8 D SO-8 SD 1 8 SD 2 7 G SD 3 6 GD 4 5 Top View S Ordering Information Si4480EY Si4480EY-T1 (with Tape and Reel) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Dra

New Product Si4487DY Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.0205 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET - 30 12.4 nC 100 % Rg Tested 0.0375 at VGS = - 4.5 V - 8.6 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APP

Si4485DY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) Definition 0.042 at VGS = - 10 V - 6 TrenchFET Power MOSFET - 30 7 nC 100 % Rg Tested 0.072 at VGS = - 4.5 V - 6 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch Notebook

Si4482DY Vishay Siliconix N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.060 @ VGS = 10 V 4.6 100 100 0.080 @ VGS = 6 V 4.0 D SO-8 SD 1 8 SD 2 7 G SD 3 6 GD 4 5 Top View S Ordering Information Si4482DY Si4482DY-T1 (with Tape and Reel) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Dr

Si4483ADY Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.0088 at VGS = - 10 V - 19.2 TrenchFET Power MOSFET - 30 44.8 nC 0.0153 at VGS = - 4.5 V - 14.6 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS

Si4480DY Vishay Siliconix N-Channel 80-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definiton 0.035 at VGS = 10 V 6.0 Compliant to RoHS Directive 2002/95/EC 80 0.040 at VGS = 6.0 V 5.5 D SO-8 S D 1 8 S D G 2 7 S D 3 6 G D 4 5 Top View S Ordering Information Si4480DY-T1-E3 (Lead (Pb)-free) N-

Si4483EDY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.0085 at VGS = - 10 V - 14 - 30 TrenchFET Power MOSFET 0.014 at VGS = - 4.5 V - 11 ESD Protection 3000 V APPLICATIONS Notebook PC - Load Switch - Adapter Switch S SO-8 S D 1 8 S D 2 7 S D

Si4484EY Vishay Siliconix N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.034 at VGS = 10 V 6.9 100 TrenchFET Power MOSFETs 0.040 at VGS = 6.0 V 6.4 175 C Maximum Junction Temperature PWM Optimized Compliant to RoHS Directive 2002/95/EC D SO-8 S D 1 8 S D 2