SI4622DY MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SI4622DY
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 385 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm
   Paquete / Cubierta: SO-8

Búsqueda de reemplazo de MOSFET SI4622DY

SI4622DY Datasheet (PDF)

..1. Size:291K vishay
si4622dy.pdf

New ProductSi4622DYVishay SiliconixDual N-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0160 at VGS = 10 V 8.0eChannel-1 30 19 SkyFET Monolithic TrenchFET 0.0186 at VGS = 4.5 V 8.0ePower MOSFET and Schottky Diode0.0264 at VGS = 10 V 8.0e

9.1. Size:255K vishay
si4628dy.pdf

Si4628DYVishay SiliconixN-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0030 at VGS = 10 V 38 SkyFET Monolithic TrenchFET Gen III30 27.5 nC0.0038 at VGS = 4.5 V 33Power MOSFET and Schottky Diode 100 % Rg and UIS Tested Compliant to RoHS

9.2. Size:240K vishay
si4626ady.pdf

New ProductSi4626ADYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.0033 at VGS = 10 V 30 TrenchFET Power MOSFET 30 37 nC 100 % Rg and UIS Tested0.0041 at VGS = 4.5 V 26.3APPLICATIONS Low-Side DC/DC Conversion- Notebook- GamingSO-

9.3. Size:237K vishay
si4626ad.pdf

9.4. Size:90K vishay
si4626dy.pdf

New ProductSi4626DYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ()ID (A)a Qg (Typ) 100 % Rg and UIS TestedRoHS 0.0036 at VGS = 10 V 30COMPLIANT 34 nC30APPLICATIONS0.0048 at VGS = 4.5 V 26.3 Low-Side DC/DC Conversion- Notebook- GamingSO-8 DS D 1 8 S D 2 7 S D 3 6

9.5. Size:281K vishay
si4620dy.pdf

Si4620DYVishay SiliconixN-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.035 at VGS = 10 V 7.430 4.2 nC LITTLE FOOT Plus Power MOSFET0.052 at VGS = 4.5 V 6.1 Compliant to RoHS Directive 2002/95/ECSCHOTTKY PRODUCT SUMMARY APPLICATIONS

9.6. Size:260K vishay
si4621dy.pdf

Si4621DYVishay SiliconixP-Channel 20-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.054 at VGS = - 10 V 6.2 LITTLE FOOT Plus Schottky- 20 4.5 nC0.094 at VGS = - 4.5 V 4.7 Compliant to RoHS Directive 2002/95/ECAPPLICATIONSSCHOTTKY PRODUCT SUMMARY P

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

Liste

Recientemente añadidas las descripciónes de los transistores: