SI4638DY MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SI4638DY
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 16 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 620 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0065 Ohm
   Paquete / Cubierta: SO-8

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SI4638DY Datasheet (PDF)

..1. Size:103K vishay
si4638dy.pdf

New ProductSi4638DYVishay SiliconixN-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0065 at VGS = 10 V 22.430 27.5 nC SkyFET Monolithic TrenchFET Power 0.008 at VGS = 4.5 V 20.2MOSFET and Schottky Diode 100 % Rg Tested 100 % UIS Tested

9.1. Size:89K vishay
si4636dy.pdf

Si4636DYVishay SiliconixN-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.0085 at VGS = 10 V 1730 18.8 nC TrenchFET Power MOSFET0.0105 at VGS = 4.5 V 15.6 100 % Rg and UIS TestedSCHOTTKY AND BODY DIODE PRODUCT APPLICATIONSSUMMARY Noteboo

9.2. Size:244K vishay
si4632dy.pdf

Si4632DYVishay SiliconixN-Channel 25 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0027 at VGS = 10 V 36 Low Qgd 25 49 nC0.0033 at VGS = 4.5 V 29 100 % Rg Tested UIS and Capacitance Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Synchronous Buck -

9.3. Size:236K vishay
si4630dy.pdf

Si4630DYVishay SiliconixN-Channel 25-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ)Available0.0027 at VGS = 10 V 36 TrenchFET Power MOSFET25 49 nC 100 % Rg Tested0.0032 at VGS = 4.5 V 29APPLICATIONS Synchronous Buck - Low Side- Notebook- Server- Workstation Synchrono

9.4. Size:233K vishay
si4634dy.pdf

Si4634DYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.0052 at VGS = 10 V 24.5 TrenchFET Power MOSFET30 21.5 nC 100 % Rg and UIS Tested0.0067 at VGS = 4.5 V 21.7APPLICATIONS Buck Converter Synchronous RectifierSO-8- Secondary R

9.5. Size:1722K kexin
si4634dy.pdf

SMD Type MOSFETN-Channel MOSFETSI4634DY (KI4634DY)SOP-8 Unit:mm Features VDS (V) = 30V ID = 24.5 A (VGS = 10V)1.50 0.15 RDS(ON) 52m (VGS = 10V) RDS(ON) 67m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS

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