SI4816BDY Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SI4816BDY 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 5.8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 9 nS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0185 Ohm
Encapsulados: SO-8
📄📄 Copiar
Búsqueda de reemplazo de SI4816BDY MOSFET
- Selecciónⓘ de transistores por parámetros
SI4816BDY datasheet
si4816bdy.pdf
Si4816BDY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Available 0.0185 at VGS = 10 V 6.8 LITTLE FOOT Plus Power MOSFET Channel-1 7.8 0.0225 at VGS = 4.5 V 6.0 100 % Rg Tested 30 0.0115 at VGS = 10 V 11.4 Channel-2 11.6 0.016 a
si4816bd.pdf
Si4816BDY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Available 0.0185 at VGS = 10 V 6.8 LITTLE FOOT Plus Power MOSFET Channel-1 7.8 0.0225 at VGS = 4.5 V 6.0 100 % Rg Tested 30 0.0115 at VGS = 10 V 11.4 Channel-2 11.6 0.016 a
si4816dy.pdf
Si4816DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.022 at VGS = 10 V 6.3 LITTLE FOOT Plus Power MOSFET Channel-1 0.030 at VGS = 4.5 V 5.4 100 % Rg Tested 30 0.013 at VGS = 10 V 10 Compliant to RoHS Directive 2002/95/EC
si4818dy.pdf
Si4818DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.022 at VGS = 10 V 6.3 LITTLE FOOT Plus Channel-1 0.030 at VGS = 4.5 V 5.4 Compliant to RoHS directive 2002/95/EC 30 0.0155 at VGS = 10 V 9.5 Channel-2 0.0205 at VGS = 4.5
Otros transistores... SI4752DY, SI4774DY, SI4776DY, SI4778DY, SI4800, SI4800BDY, SI4810BDY, SI4812BDY, 7N65, SI4823DY, SI4825DDY, SI4825DY, SI4829DY, SI4830CDY, SI4831BDY, SI4833ADY, SI4833BDY
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: BCD70N07A | BCD90N03 | BCD80N06 | T50N06 | H50N06 | BCD12N65 | BCT12N65 | BCD4N65 | BCT4N65 | BCD7N65 | BCT7N65 | BCT20N65 | ASDM30P100KQ | ASDM30N90Q | ASDM30N75KQ | ASDM30N150Q
Popular searches
irf 3205 | 2n5088 equivalent | d882 transistor | 2n3771 | s9018 | 2n3904 equivalent | ksa1220 | s9015
