SI4825DDY MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SI4825DDY
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 10.9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 100 nC
   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 455 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0125 Ohm
   Paquete / Cubierta: SO-8

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SI4825DDY Datasheet (PDF)

..1. Size:236K vishay
si4825ddy.pdf

New ProductSi4825DDYVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.0125 at VGS = - 10 V - 14.9 100 % Rg TestedRoHS- 30 29.5 nCCOMPLIANT 100 % UIS Tested0.0205 at VGS = - 4.5 V - 11.6APPLICATIONS Load Switch Notebook Adaptor SwitchSO-8 S

6.1. Size:234K vishay
si4825dd.pdf

7.1. Size:244K vishay
si4825dy.pdf

Si4825DYVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.014 at VGS = - 10 V - 11.5 TrenchFET Power MOSFETs - 300.022 at VGS = - 4.5 V - 9.2 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECSO-8 SS D1 8S2 7 DGS 3 6 DG4 5 DTop

9.1. Size:55K vishay
si4822dy.pdf

Si4822DYVishay SiliconixN-Channel Reduced Qg, Fast Swithcing MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.010 @ VGS = 10 V "12.030300.015 @ VGS = 4.5 V "9.9DSO-8SD1 8GSD2 7SD3 6GD4 5Top View SN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-Source Voltage VDS 30VVGate-Source Volt

9.2. Size:47K vishay
si4820dy.pdf

Si4820DYVishay SiliconixN-Channel Reduced Qg, Fast Switching MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.0135 @ VGS = 10 V 1030300.020 @ VGS = 4.5 V 8D D D DSO-8SD1 8S D2 7GSD3 6G D N-Channel MOSFET4 5Top ViewOrdering Information: Si4820DYSi4820DY-T1 (with Tape and Reel)S S SABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Paramet

9.3. Size:66K vishay
si4826dy.pdf

Si4826DYVishay SiliconixAsymmetrical Dual N-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYFEATURESVDS (V) rDS(on) (W) ID (A)D 100% Rg Tested0.022 @ VGS = 10 V 6.3Channel 1Channel-10.030 @ VGS = 4.5 V 5.430300.0155 @ VGS = 10 V 9.5Channel 2Channel-20.0205 @ VGS = 4.5 V 8.2D1 D2 D2 D2SO-8S1 1 D18G1 2 D27S2 3 D26G1 G2G2 4 D25Top ViewS1 S2Orderi

9.4. Size:120K vishay
si4828dy.pdf

Si4828DYNew ProductVishay SiliconixDual N-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.022 @ VGS = 10 V 7.5Channel-1Channel-10.030 @ VGS = 4.5 V 6.53030300.0135 @ VGS = 10 V 9.8Channel-2Channel-20.0175 @ VGS = 4.5 V 8.5D1 D1 D2 D2SO-8S1 1 D18G1 2 D17G1 G2S2 3 D26G2 4 D25S1 S2Top ViewN-Channel 1 N-Channel 2MOSFE

9.5. Size:61K vishay
si4824dy.pdf

Si4824DYVishay SiliconixAsymmetric N-Channel, Reduced Qg, Fast Switching MOSFETFEATURESPRODUCT SUMMARYD High-EfficiencyD PWM OptimizedVDS (V) rDS(on) (W) ID (A)D 100% Rg Tested0.040 @ VGS = 10 V 4.7N Channel 1N-Channel 10.065 @ VGS = 4.5 V 3.730300.0175 @ VGS = 10 V 9N Channel 2N-Channel 20.027 @ VGS = 4.5 V 7.3D1 D2 D2 D2SO-8S1 1 D18G1 2 D27G1

9.6. Size:105K vishay
si4829dy.pdf

Si4829DYVishay SiliconixP-Channel 20-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.215 at VGS = - 4.5 V - 2 LITTLE FOOT Plus Schottky- 20 2.6 nC 100 % Rg Tested0.320 at VGS = - 2.5 V - 2 Compliant to RoHS Directive 2002/95/ECSCHOTTKY PRODUCT SUMMAR

9.7. Size:282K vishay
si4823dy.pdf

Si4823DYVishay SiliconixP-Channel 20 V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.108 at VGS = - 4.5 V - 4.1 LITTLE FOOT Plus Schottky- 20 4 nC0.175 at VGS = - 2.5 V - 3.3 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECSCHOTTKY PRODUCT SUMMA

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