SI4825DY MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Si4825DYVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.014 at VGS = - 10 V - 11.5 TrenchFET Power MOSFETs - 300.022 at VGS = - 4.5 V - 9.2 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECSO-8 SS D1 8S2 7 DGS 3 6 DG4 5 DTop

New ProductSi4825DDYVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.0125 at VGS = - 10 V - 14.9 100 % Rg TestedRoHS- 30 29.5 nCCOMPLIANT 100 % UIS Tested0.0205 at VGS = - 4.5 V - 11.6APPLICATIONS Load Switch Notebook Adaptor SwitchSO-8 S

New ProductSi4825DDYVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.0125 at VGS = - 10 V - 14.9 100 % Rg TestedRoHS- 30 29.5 nCCOMPLIANT 100 % UIS Tested0.0205 at VGS = - 4.5 V - 11.6APPLICATIONS Load Switch Notebook Adaptor SwitchSO-8 S

Si4822DYVishay SiliconixN-Channel Reduced Qg, Fast Swithcing MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.010 @ VGS = 10 V "12.030300.015 @ VGS = 4.5 V "9.9DSO-8SD1 8GSD2 7SD3 6GD4 5Top View SN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-Source Voltage VDS 30VVGate-Source Volt

Si4820DYVishay SiliconixN-Channel Reduced Qg, Fast Switching MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.0135 @ VGS = 10 V 1030300.020 @ VGS = 4.5 V 8D D D DSO-8SD1 8S D2 7GSD3 6G D N-Channel MOSFET4 5Top ViewOrdering Information: Si4820DYSi4820DY-T1 (with Tape and Reel)S S SABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Paramet

Si4826DYVishay SiliconixAsymmetrical Dual N-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYFEATURESVDS (V) rDS(on) (W) ID (A)D 100% Rg Tested0.022 @ VGS = 10 V 6.3Channel 1Channel-10.030 @ VGS = 4.5 V 5.430300.0155 @ VGS = 10 V 9.5Channel 2Channel-20.0205 @ VGS = 4.5 V 8.2D1 D2 D2 D2SO-8S1 1 D18G1 2 D27S2 3 D26G1 G2G2 4 D25Top ViewS1 S2Orderi

Si4828DYNew ProductVishay SiliconixDual N-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.022 @ VGS = 10 V 7.5Channel-1Channel-10.030 @ VGS = 4.5 V 6.53030300.0135 @ VGS = 10 V 9.8Channel-2Channel-20.0175 @ VGS = 4.5 V 8.5D1 D1 D2 D2SO-8S1 1 D18G1 2 D17G1 G2S2 3 D26G2 4 D25S1 S2Top ViewN-Channel 1 N-Channel 2MOSFE

Si4824DYVishay SiliconixAsymmetric N-Channel, Reduced Qg, Fast Switching MOSFETFEATURESPRODUCT SUMMARYD High-EfficiencyD PWM OptimizedVDS (V) rDS(on) (W) ID (A)D 100% Rg Tested0.040 @ VGS = 10 V 4.7N Channel 1N-Channel 10.065 @ VGS = 4.5 V 3.730300.0175 @ VGS = 10 V 9N Channel 2N-Channel 20.027 @ VGS = 4.5 V 7.3D1 D2 D2 D2SO-8S1 1 D18G1 2 D27G1

Si4829DYVishay SiliconixP-Channel 20-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.215 at VGS = - 4.5 V - 2 LITTLE FOOT Plus Schottky- 20 2.6 nC 100 % Rg Tested0.320 at VGS = - 2.5 V - 2 Compliant to RoHS Directive 2002/95/ECSCHOTTKY PRODUCT SUMMAR

Si4823DYVishay SiliconixP-Channel 20 V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.108 at VGS = - 4.5 V - 4.1 LITTLE FOOT Plus Schottky- 20 4 nC0.175 at VGS = - 2.5 V - 3.3 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECSCHOTTKY PRODUCT SUMMA