SI4825DY MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Si4825DY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.014 at VGS = - 10 V - 11.5 TrenchFET Power MOSFETs - 30 0.022 at VGS = - 4.5 V - 9.2 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC SO-8 S S D 1 8 S 2 7 D G S 3 6 D G 4 5 D Top

New Product Si4825DDY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.0125 at VGS = - 10 V - 14.9 100 % Rg Tested RoHS - 30 29.5 nC COMPLIANT 100 % UIS Tested 0.0205 at VGS = - 4.5 V - 11.6 APPLICATIONS Load Switch Notebook Adaptor Switch SO-8 S

New Product Si4825DDY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.0125 at VGS = - 10 V - 14.9 100 % Rg Tested RoHS - 30 29.5 nC COMPLIANT 100 % UIS Tested 0.0205 at VGS = - 4.5 V - 11.6 APPLICATIONS Load Switch Notebook Adaptor Switch SO-8 S

Si4822DY Vishay Siliconix N-Channel Reduced Qg, Fast Swithcing MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.010 @ VGS = 10 V "12.0 30 30 0.015 @ VGS = 4.5 V "9.9 D SO-8 SD 1 8 G SD 2 7 SD 3 6 GD 4 5 Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V V Gate-Source Volt

Si4820DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.0135 @ VGS = 10 V 10 30 30 0.020 @ VGS = 4.5 V 8 D D D D SO-8 SD 1 8 S D 2 7 G SD 3 6 G D N-Channel MOSFET 4 5 Top View Ordering Information Si4820DY Si4820DY-T1 (with Tape and Reel) S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Paramet

Si4826DY Vishay Siliconix Asymmetrical Dual N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY FEATURES VDS (V) rDS(on) (W) ID (A) D 100% Rg Tested 0.022 @ VGS = 10 V 6.3 Channel 1 Channel-1 0.030 @ VGS = 4.5 V 5.4 30 30 0.0155 @ VGS = 10 V 9.5 Channel 2 Channel-2 0.0205 @ VGS = 4.5 V 8.2 D1 D2 D2 D2 SO-8 S1 1 D1 8 G1 2 D2 7 S2 3 D2 6 G1 G2 G2 4 D2 5 Top View S1 S2 Orderi

Si4828DY New Product Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 7.5 Channel-1 Channel-1 0.030 @ VGS = 4.5 V 6.5 30 30 30 0.0135 @ VGS = 10 V 9.8 Channel-2 Channel-2 0.0175 @ VGS = 4.5 V 8.5 D1 D1 D2 D2 SO-8 S1 1 D1 8 G1 2 D1 7 G1 G2 S2 3 D2 6 G2 4 D2 5 S1 S2 Top View N-Channel 1 N-Channel 2 MOSFE

Si4824DY Vishay Siliconix Asymmetric N-Channel, Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY D High-Efficiency D PWM Optimized VDS (V) rDS(on) (W) ID (A) D 100% Rg Tested 0.040 @ VGS = 10 V 4.7 N Channel 1 N-Channel 1 0.065 @ VGS = 4.5 V 3.7 30 30 0.0175 @ VGS = 10 V 9 N Channel 2 N-Channel 2 0.027 @ VGS = 4.5 V 7.3 D1 D2 D2 D2 SO-8 S1 1 D1 8 G1 2 D2 7 G1

Si4829DY Vishay Siliconix P-Channel 20-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.215 at VGS = - 4.5 V - 2 LITTLE FOOT Plus Schottky - 20 2.6 nC 100 % Rg Tested 0.320 at VGS = - 2.5 V - 2 Compliant to RoHS Directive 2002/95/EC SCHOTTKY PRODUCT SUMMAR

Si4823DY Vishay Siliconix P-Channel 20 V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)d Qg (Typ.) Definition 0.108 at VGS = - 4.5 V - 4.1 LITTLE FOOT Plus Schottky - 20 4 nC 0.175 at VGS = - 2.5 V - 3.3 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC SCHOTTKY PRODUCT SUMMA