SI4831BDY MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Si4831BDYVishay SiliconixP-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.042 at VGS = - 10 V - 6.6 LITTLE FOOT Plus Power MOSFET- 307.80.065 at VGS = - 4.5 V - 5.3 100 % Rg TestedAPPLICATIONSSCHOTTKY PRODUCT SUMMARY HDDVF (V

Si4831BDYVishay SiliconixP-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.042 at VGS = - 10 V - 6.6 LITTLE FOOT Plus Power MOSFET- 307.80.065 at VGS = - 4.5 V - 5.3 100 % Rg TestedAPPLICATIONSSCHOTTKY PRODUCT SUMMARY HDDVF (V

Si4831DYNew ProductVishay SiliconixP-Channel 30-V (D-S) MOSFET with Schottky DiodeMOSFET PRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.045 @ VGS = 10 V "530300.090 @ VGS = 4.5 V "3.5 SCHOTTKY PRODUCT SUMMARYVf (V)VKA (V) Diode Forward Voltage IF (A)30 0.53 V @ 3 A 3S KSO-8AK1 8GAK2 7SD3 6GD4 5Top ViewD AP-Channel MOSFETABSOLUTE MA

Si4835DYVishay SiliconixP-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.019 @ VGS = -10 V -8.0-30300.033 @ VGS = -4.5 V -6.0S S SSO-8SD1 8GS D2 7SD3 6G D4 5Top ViewD D D DOrdering Information: Si4835DYSi4835DY-T1 (with Tape and Reel)P-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbo

Si4835BDYVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A) Qg (Typ)D Advanced High Cell Density ProcessD 100% Rg Tested0.018 @ VGS = -10 V -9.6-30-30-25-25APPLICATIONS0.030 @ VGS = -4.5 V -7.5D Load Switches- Notebook PCs- Desktop PCsSSO-8SD1 8GS D2 7SD3 6G D4 5Top Vie

New ProductSi4838BDYVishay SiliconixN-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.0027 at VGS = 4.5 V 34 100 % Rg Tested0.0032 at VGS = 2.5 V 12 31 33 nC 100 % UIS Tested0.0040 at VGS = 1.8 V 28APPLICATIONS Low VIN DC/DCSO-8DS D1 8S 2 7 DDS 3

Si4836DYVishay SiliconixN-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.003 at VGS = 4.5 V 25 TrenchFET Power MOSFET0.004 at VGS = 2.5 V 12 22 PWM Optimized0.005 at VGS = 1.8 V 19 100 % Rg Tested APPLICATIONS Low Voltage Synchronous Rectification Low

Si4837DYVishay SiliconixP-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESMOSFET PRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)D LITTLE FOOTr Plus Schottky0.020 @ VGS = -10 V 8.3D 100% Rg Tested-30300.030 @ VGS = - 4.5 V 6.8 APPLICATIONSSCHOTTKY PRODUCT SUMMARY D Battery ChargingD DC/DC ConvertersVf (V)- Asynchronous BuckVKA (V) Diode

Si4830ADYVishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.022 at VGS = 10 V 7.5 LITTLE FOOT Plus Schottky300.030 at VGS = 4.5 V 6.5 Si4830DY Pin Compatible PWM Optimized 100 % Rg TestedSCHOTTKY PRODUCT SUMMARY Comp

Si4832DYVishay SiliconixN-Channel 30-V (D-S) MOSFET with Schottky DiodeMOSFET PRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.018 @ VGS = 10 V 930300.028 @ VGS = 4.5 V 7.3 SCHOTTKY PRODUCT SUMMARYVSD (V)VDS (V) Diode Forward Voltage IF (A)30 0.53 V @ 3.0 A 4.0DSO-8SD1 8Ordering Information:S D2 7Si4832DYSD Schottky Diode3 6 Si4832DY-T1 (with Tape and Reel)

Specification ComparisonVishay SiliconixSi4833ADY vs. Si4833DYDescription: P-Channel, 30 V (D-S) MOSFET with Schottky DiodePackage: SO-8Pin Out: IdenticalPart Number ReplacementsSi4833ADY-T1-E3 Replaces Si4833DY-T1-E3Si4833ADY-T1-E3 Replaces Si4833DY-T1ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Parameter Symbol Si4833ADY Si4833DY UnitDrain-Source Voltage

Si4833DYVishay SiliconixP-Channel 30-V (D-S) MOSFET with Schottky DiodeMOSFET PRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.085 @ VGS = 10 V "3.530300.180 @ VGS = 4.5 V "2.5 SCHOTTKY PRODUCT SUMMARYVF (V)VKA (V) Diode Forward Voltage IF (A)30 0.5 V @ 1.0 A 1.4S KSO-8KA 1 8GKA 2 7SD3 6GD4 5D ATop ViewABSOLUTE MAXIMUM RATINGS (TA = 25_C

New ProductSi4835DDYVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Available0.018 at VGS = - 10 V - 13 TrenchFET Power MOSFET- 30 22 nC 100 % Rg Tested0.030 at VGS = - 4.5 V - 10 100 % UIS TestedAPPLICATIONS Load Switches- Notebook PCs- Des

Si4838DYVishay SiliconixN-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.003 at VGS = 4.5 V 25 TrenchFET Power MOSFETs: 2.5 V Rated120.004 at VGS = 2.5 V 20 100 % Rg TestedDSO-8SD1 8S D2 7S D3 6GG D4 5Top ViewSOrdering Information: Si4838DY-T1-

Si4833ADYVishay SiliconixP-Channel 30 V (D-S) MOSFET with Schottky DiodeFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.072 at VGS = - 10 V - 4.6 LITTLE FOOT Plus Power MOSFET- 30 - 4.60.110 at VGS = - 4.5 V - 3.4 Compliant to RoHS Directive 2002/95/ECSCHOTTKY PRODUCT SUMMARY VF

Si4833BDYVishay SiliconixP-Channel 30 V (D-S) MOSFET with Schottky DiodeFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.) Definition LITTLE FOOT Plus Power MOSFET0.068 at VGS = - 10 V - 4.6- 30 4.6 100 % Rg Tested0.110 at VGS = - 4.5 V - 3.4 Compliant to RoHS Directive 2002/95/ECSCHOTTKY

Si4830ADYVishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY LITTLE FOOT Plus SchottkyVDS (V) rDS(on) ()ID (A) Si4830DY Pin Compatible0.022 at VGS = 10 V 7.5 PWM Optimized RoHS300.030 at VGS = 4.5 V 6.5 COMPLIANT 100 % Rg TestedSCHOTTKY PRODUCT SUMMARY VSD (V) APPLICATIONSVDS (V) IF (A)Diode Forward Vo

Si4834BDYVishay SiliconixDual N-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.022 at VGS = 10 V 7.5 TrenchFET Power MOSFET300.030 at VGS = 4.5 V 6.5 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECSCHOTTKY PRODUCT SUMM

Si4834DYVishay SiliconixDual N-Channel 30-V (D-S) MOSFET with Schottky DiodePRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.022 @ VGS = 10 V 7.530300.030 @ VGS = 4.5 V 6.5SCHOTTKY PRODUCT SUMMARYVSD (v)VDS (V) Diode Forward Voltage IF (A)30 0.50 V @ 1.0 A 2.0D1 D1D2 D2SO-8S1 1 D18G1 2 D17 Schottky DiodeG1G2S2 3 D26G2 4 D25Top ViewS1S2Ordering

Si4830CDYVishay SiliconixDual N-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a, e Qg (Typ.)Definition0.020 at VGS = 10 V 8.0 LITTLE FOOT Plus SchottkyChannel-1 30 7.3 PWM Optimized0.025 at VGS = 4.5 V 8.0 100 % Rg Tested0.020 at VGS = 10 V 8.0Channel-2 30 7

Si4830CDYVishay SiliconixDual N-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a, e Qg (Typ.)Definition0.020 at VGS = 10 V 8.0 LITTLE FOOT Plus SchottkyChannel-1 30 7.3 PWM Optimized0.025 at VGS = 4.5 V 8.0 100 % Rg Tested0.020 at VGS = 10 V 8.0Channel-2 30 7

Si4830DYVishay SiliconixDual N-Channel 30-V (D-S) MOSFET with Schottky DiodePRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.022 @ VGS = 10 V 7.530300.030 @ VGS = 4.5 V 6.5SCHOTTKY PRODUCT SUMMARYVSD (V)VDS (V) Diode Forward Voltage IF (A)30 0.50 V @ 1.0 A 2.0D1 D1D2 D2SO-8S1 1 D18G1 2 D17Schottky DiodeG1G2S2 3 D26G2 4 D25Top ViewS1Ordering In

New ProductSi4838BDYVishay SiliconixN-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.0027 at VGS = 4.5 V 34 100 % Rg Tested0.0032 at VGS = 2.5 V 12 31 33 nC 100 % UIS Tested0.0040 at VGS = 1.8 V 28APPLICATIONS Low VIN DC/DCSO-8DS D1 8S 2 7 DDS 3

Si4834CDYVishay SiliconixDual N-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a, e Qg (Typ.)Definition0.020 at VGS = 10 V 8.0 TrenchFET Power MOSFETChannel-1 30 7.30.025 at VGS = 4.5 V 8.0 100 % Rg Tested0.020 at VGS = 10 V 8.0 100 % UIS TestedChannel-2 30

New ProductSi4835DDYVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Available0.018 at VGS = - 10 V - 13 TrenchFET Power MOSFET- 30 22 nC 100 % Rg Tested0.030 at VGS = - 4.5 V - 10 100 % UIS TestedAPPLICATIONS Load Switches- Notebook PCs- Des

Si4835DYVishay SiliconixP-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.019 @ VGS = -10 V -8.0-30300.033 @ VGS = -4.5 V -6.0S S SSO-8SD1 8GS D2 7SD3 6G D4 5Top ViewD D D DOrdering Information: Si4835DYSi4835DY-T1 (with Tape and Reel)P-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbo

SI4835DDYwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Available0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET- 30 22 nC 100 % Rg Tested0.0180 at VGS = - 4.5 V - 10 100 % UIS TestedAPPLICATIONS Load SwitchesS - Notebook PCsSO-8- Desktop PC