SI4858DY MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Si4858DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.00525 at VGS = 10 V 20 TrenchFET Power MOSFET 30 0.007 at VGS = 4.5 V 17 Optimized for "Low Side" Synchronous Rectifier Operation 100 % Rg Tested APPLICATIONS DC/DC Converters Synchr

Si4850BDY www.vishay.com Vishay Siliconix N-Channel 60 V (D-S) MOSFET FEATURES SO-8 Single D TrenchFET Gen IV power MOSFET D 5 D 6 100 % Rg and UIS tested D 7 Material categorization 8 for definitions of compliance please see www.vishay.com/doc?99912 4 APPLICATIONS D G 3 3 Synchronous rectification S S 2 2 S S 1 1 Primary side switch S

Si4856ADY New Product Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES D TrenchFETr Power MOSFETS PRODUCT SUMMARY D 100% Rg Tested VDS (V) rDS(on) (W) ID (A) Qg (Typ) APPLICATIONS 0.0052 @ VGS = 10 V 17 D Buck Converter 30 21 30 21 0.0076 @ VGS = 4.5 V 14 D Synchronous Rectifier - Secondary Rectifier SO-8 D SD 1 8 S D 2 7 SD 3 6 G D 4 5 G Top View S Ordering In

Si4856DY New Product Vishay Siliconix N-Channel 30-V MOSFET FEATURES D TrenchFETr Power MOSFETS PRODUCT SUMMARY D 100% RG Tested VDS (V) rDS(on) (W) ID (A) APPLICATIONS 0.006 @ VGS = 10 V 17 D Buck Converter 30 30 D Synchronous Rectifier 0.0085 @ VGS = 4.5 V 14 - Secondary Rectifier D SO-8 SD 1 8 S D 2 7 G SD 3 6 G D 4 5 Top View S N-Channel MOSFET ABSOLUTE MAXIMUM

Si4850EY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.022 at VGS = 10 V 8.5 TrenchFET Power MOSFETs 60 0.031 at VGS = 4.5 V 7.2 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/EC D SO-8 SD 1 8 SD 2 7

Si4852DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY FEATURES VDS (V) rDS(on) (W) ID (A) D LITTLE FOOTr Plus 0.0120 @ VGS = 10 V 11 D 100% Rg Tested 30 30 0.0175 @ VGS = 4.5 V 9.5 SCHOTTKY PRODUCT SUMMARY VSD (v) VDS (V) Diode Forward Voltage IF (A) 30 0.53 V @ 3 A 4 SO-8 D SD 1 8 S D 2 7 SD 3 6 Schottky Diode G G D 4 5 Top View S

Si4850EY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.022 at VGS = 10 V 8.5 TrenchFET Power MOSFETs 60 0.031 at VGS = 4.5 V 7.2 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/EC D SO-8 SD 1 8 SD 2 7

Si4854DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY FEATURES VDS (V) rDS(on) (W) ID (A) D LITTLE FOOTr Plus Dual TrenchFETr 0.026 @ VGS = 10 V 6.9 Power MOSFET Plus Integrated Schottky 30 0.030 @ VGS = 4.5 V 6.4 Diode D PWM Optimized for Faster Swtiching 0.041 @ VGS = 2.5 V 5.5 D 100% Rg Tested SCHOTTKY PRODUCT SUMMARY APPLICATIONS VSD

SI4850DY-T1 www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition TrenchFET Power MOSFET 0.025 at VGS = 10 V 7.6 60 10.5 nC Optimized for Low Side Synchronous 0.030 at VGS = 4.5 V 6.5 Rectifier Operation 100 % Rg and UIS Tested APPLICATIONS D CCF