SI4892DY Datasheet. Equivalente

 ..1. Size:227K  vishay
 si4892dy.pdf

Si4892DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.012 at VGS = 10 V 12.4 TrenchFET Power MOSFETs 30 0.020 at VGS = 4.5 V 9.6 High Efficiency PWM Optimized 100 % Rg Tested 100 % UIS Tested D SO-8 S D 1 8 S D 2 7 G S D 3 6 N-Channel

 9.1. Size:244K  vishay
 si4896dy.pdf

Si4896DY Vishay Siliconix N-Channel 80-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.0165 at VGS = 10 V 9.5 TrenchFET Power MOSFETs 80 0.022 at VGS = 6.0 V 8.3 Compliant to RoHS Directive 2002/95/EC D SO-8 S D 1 8 S D 2 7 G S D 3 6 G D 4 5 Top View S Ordering Information

 9.2. Size:226K  vishay
 si4894bdy.pdf

Si4894BDY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.011 at VGS = 10 V 12 TrenchFET Power MOSFET 30 0.016 at VGS = 4.5 V 9.8 100 % Rg Tested D SO-8 S D 1 8 S 2 7 D G S 3 6 D 4 5 G D Top View S Ordering Information Si4894BDY-T1-E3 (Lead (Pb)

 9.3. Size:105K  vishay
 si4894dy.pdf

Si4894DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A) D Lead (Pb)-Free Version is RoHS Compliant Pb-free 0.012 @ VGS = 10 V 12.5 30 30 Available 0.018 @ VGS = 4.5 V 10.2 D SO-8 SD 1 8 SD 2 7 G SD 3 6 GD 4 5 S Top View N-Channel MOSFET Ordering Information Si4894DY-T1 Si4894DY-T1 E3 (Lea

 9.4. Size:237K  vishay
 si4890dy.pdf

Si4890DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.012 at VGS = 10 V 11 TrenchFET Power MOSFETs 30 0.020 at VGS = 4.5 V 9 High-Efficiency PWM Optimized Compliant to RoHS Directive 2002/95/EC SO-8 D S D 1 8 S D 2 7 S D

 9.5. Size:88K  vishay
 si4890bd si4890bdy.pdf

Si4890BDY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.012 at VGS = 10 V 16 TrenchFET Power MOSFET 30 10 nC 100 % Rg and UIS Tested 0.016 at VGS = 4.5 V 14 APPLICATIONS Notebook - System Power - Adapter Switch SO-8 DC/DC D SD

 9.6. Size:866K  cn vbsemi
 si4890bdy-t1.pdf

SI4890BDY-T1 www.VBsemi.tw N-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.012 at VGS = 10 V 12 20 6.1 nC Optimized for High-Side Synchronous 0.015 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch