SI4904DY Todos los transistores

 

SI4904DY MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SI4904DY
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 270 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm
   Paquete / Cubierta: SO-8

 Búsqueda de reemplazo de MOSFET SI4904DY

 

SI4904DY Datasheet (PDF)

 ..1. Size:240K  vishay
si4904dy.pdf

SI4904DY
SI4904DY

Si4904DYVishay SiliconixDual N-Channel 40-V MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Available0.016 at VGS = 10 V 8 TrenchFET Power MOSFET40 560.019 at VGS = 4.5 V 100 % Rg Tested8 UIS TestedAPPLICATIONS CCFL InverterSO-8 D1 D2S D 1 1 1 8 G 1 2 D 1 7 S D 2 2 3

 9.1. Size:267K  vishay
si4909dy.pdf

SI4904DY
SI4904DY

New ProductSi4909DYVishay SiliconixDual P-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.027 at VGS = - 10 V - 8 TrenchFET Power MOSFET- 40 21.7 nC0.034 at VGS = - 4.5 V - 7.2 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECS

 9.2. Size:259K  vishay
si4906dy.pdf

SI4904DY
SI4904DY

Si4906DYVishay SiliconixDual N-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.039 at VGS = 10 V 6.6 TrenchFET Power MOSFETN-Channel 40 6.6 100 % Rg and UIS Tested0.050 at VGS = 4.5 V 5.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS CCFL Inverter

 9.3. Size:231K  vishay
si4900dy.pdf

SI4904DY
SI4904DY

Si4900DYVishay SiliconixDual N-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.058 at VGS = 10 V 5.3 TrenchFET Power MOSFET60 13 nC0.072 at VGS = 4.5 V 4.7APPLICATIONS LCD TV CCFL InverterSO-8D1 D2S1 1 D18G1 2 D17S2 3 D26G2 4 D25G1 G2To

 9.4. Size:239K  vishay
si4908dy.pdf

SI4904DY
SI4904DY

Si4908DYVishay SiliconixDual N-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.060 at VGS = 10 V 5.0 TrenchFET Power MOSFET40 5.6 100 % Rg Tested0.070 at VGS = 4.5 V 4.7APPLICATIONS CCFL InverterD1 D2SO-8S1 1 D18G1 2 D17S2 3 D26G1 G2G2

 9.5. Size:847K  cn vbsemi
si4909dy.pdf

SI4904DY
SI4904DY

SI4909DYwww.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.021 at VGS = - 10 V - 9.5 100 % UIS TestedRoHS- 30 15 nCCOMPLIANT0.028 at VGS = - 4.5 V - 8.0APPLICATIONS Load Switches- Notebook PCs- Desktop PCsSO-8S1 S2- Game StationsS1 1 D18G1

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