SI4913DY Todos los transistores

 

SI4913DY MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SI4913DY
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 7.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 42 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm
   Paquete / Cubierta: SO-8

 Búsqueda de reemplazo de MOSFET SI4913DY

 

SI4913DY Datasheet (PDF)

 ..1. Size:245K  vishay
 si4913dy.pdf pdf_icon

SI4913DY

Si4913DY Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.015 at VGS = - 4.5 V - 9.4 TrenchFET Power MOSFET 0.019 at VGS = - 2.5 V - 20 - 8.4 Compliant to RoHS Directive 2002/95/EC 0.024 at VGS = - 1.8 V - 7.5 APPLICATIONS Load Switching S1 S2

 ..2. Size:1705K  cn vbsemi
 si4913dy.pdf pdf_icon

SI4913DY

SI4913DY www.VBsemi.tw Dual P-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.018 at VGS = - 4.5 V - 8.9 TrenchFET Power MOSFET 0.022 at VGS = - 2.5 V - 20 - 8.1 Advanced High Cell Density Process 0.030 at VGS = - 1.8 V - 3.6 Compliant to RoHS Directive 2002/95/EC APPLICA

 9.1. Size:132K  1
 si4914dy.pdf pdf_icon

SI4913DY

Si4914DY New Product Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY LITTLE FOOT Plus Integrated Schottky VDS (V) rDS(on) ( )ID (A) 100 % Rg Tested 0.023 at VGS = 10 V 7.0 Channel-1 RoHS 0.032 at VGS = 4.5 V 5.6 APPLICATIONS COMPLIANT 30 0.020 at VGS = 10 V 7.4 Logic DC/DC Channel-2 0.027 at VGS = 4.5 V

 9.2. Size:258K  vishay
 si4916dy.pdf pdf_icon

SI4913DY

Si4916DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.018 at VGS = 10 V 10 LITTLE FOOT Plus Integrated Schottky Channel-1 6.6 0.023 at VGS = 4.5 V 8.5 100 % Rg Tested 30 0.018 at VGS = 10 V 10.5 Channel-2 8.9 APPL

MOSTRAR MÁS

Otros transistores... SI4888DY , SI4890BDY , SI4890DY , SI4892DY , SI4894BDY , SI4896DY , SI4904DY , SI4909DY , IRF1407 , SI4914BDY , SI4916DY , SI4925DDY , SI4931DY , SI4936CDY , SI4943CDY , SI4946BEY , SI4948BEY .

 

 
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