SI5414DC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SI5414DC
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 280 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.017 Ohm
   Paquete / Cubierta: 1206-8

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SI5414DC Datasheet (PDF)

..1. Size:123K vishay
si5414dc.pdf

New ProductSi5414DCVishay Siliconix N-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition TrenchFET Power MOSFET0.017 at VGS = 4.5 V 620 12.5 nC 100 % Rg Tested0.022 at VGS = 2.5 V 6 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switches1206-8

9.1. Size:148K vishay
si5418du.pdf

New ProductSi5418DUVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.0145 at VGS = 10 V 12RoHS30 9.5 nC New Thermally Enhanced PowerPAK0.0185 at VGS = 4.5 V 12COMPLIANTChipFET Package- Small Footprint Area PowerPAK ChipFET Single- Low On-Resista

9.2. Size:164K vishay
si5415aedu.pdf

Si5415AEDUwww.vishay.comVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () (Max.) ID (A)a Qg (Typ.) Thermally Enhanced PowerPAK ChipFET Package0.0096 at VGS = - 4.5 V - 25- Small Footprint Area- 20 0.0132 at VGS = - 2.5 V - 25 43 nC- Low On-Resistance0.0220 at VGS = - 1.8 V - 7 100 % Rg and UIS T

9.3. Size:144K vishay
si5419du.pdf

Si5419DUVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.020 at VGS = - 10 V - 12a TrenchFET Power MOSFET- 30 15.5 nC0.033 at VGS = - 4.5 V - 12a New Thermally Enhanced PowerPAKChipFET Package- Small Footprint Area- Low On-ResistancePowerP

9.4. Size:162K vishay
si5411edu.pdf

Si5411EDUwww.vishay.comVishay SiliconixP-Channel 12 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () (Max.) ID (A) Qg (Typ.) Thermally Enhanced PowerPAK ChipFET Package0.0082 at VGS = - 4.5 V - 25a- Small Footprint Area0.0094 at VGS = - 3.7 V - 25a- Low On-Resistance- 12 43 nC0.0117 at VGS = - 2.5 V - 25a 100 % Rg and UI

9.5. Size:148K vishay
si5410du.pdf

New ProductSi5410DUVishay SiliconixN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.018 at VGS = 10 V 12 New Thermally Enhanced PowerPAKRoHS40 10 nC0.021 at VGS = 4.5 V 12 COMPLIANTChipFET Package- Small Footprint AreaPowerPAK ChipFET Single- Low On-Resistance

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