2SJ133 Todos los transistores

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DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ133, 2SJ133-Z P-CHANNEL POWER MOS FET FOR SWITCHING FEATURES PACKAGE DRAWING (UNIT mm) Gate drive available at logic level (VGS = 4 V) High current control available in small dimension due to low RDS(on) ( 0.45 ) 2SJ133-Z is a lead process product and is deal for mounting a hybrid IC. QUALITY GRADES Standard

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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

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2SJ130(L), 2SJ130(S) Silicon P Channel MOS FET REJ03G0846-0200 (Previous ADE-208-1181) Rev.2.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators Outline RENESAS Package co

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DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ132, 2SJ132-Z P-CHANNEL POWER MOS FET FOR SWITCHING FEATURES PACKAGE DRAWING (UNIT mm) Gate drive available at logic level (VGS = -4 V) High current control available in small dimension due to low RDS(on) ( 0.25 ) 2SJ132-Z is a lead process product and is deal for mounting a hybrid IC. QUALITY GRADES Standard P

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SMD Type MOSFET P-Channel MOSFET 2SJ130S TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features 4 VDS (V) =-300V ID =-1 A (VGS =-10V) 0.127 +0.1 0.80-0.1 RDS(ON) 8.5 (VGS =-10V) D max High speed switching Low drive current G + 0.1 2.3 0.60- 0.1 1 Gate +0.15 4.60 -0.15 2 Drain 3 Source 4 Drain S Ab

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isc P-Channel MOSFET Transistor 2SJ139 FEATURES Drain Current I =-10@ T =25 D C Drain Source Voltage- V = -100(Min) DSS Static Drain-Source On-Resistance R = 0.3(Max)@V = -10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION DC-DC converter, power switch. ABSOLUTE MAXIMUM RATINGS(T