2SJ133 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DATA SHEETMOS FIELD EFFECT POWER TRANSISTORS2SJ133, 2SJ133-ZP-CHANNEL POWER MOS FETFOR SWITCHINGFEATURES PACKAGE DRAWING (UNIT: mm) Gate drive available at logic level (VGS = 4 V) High current control available in smalldimension due to low RDS(on) ( 0.45 ) 2SJ133-Z is a lead process product and is dealfor mounting a hybrid IC.QUALITY GRADES Standard

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SJ130(L), 2SJ130(S) Silicon P Channel MOS FET REJ03G0846-0200 (Previous: ADE-208-1181) Rev.2.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators Outline RENESAS Package co

DATA SHEETMOS FIELD EFFECT POWER TRANSISTORS2SJ132, 2SJ132-ZP-CHANNEL POWER MOS FETFOR SWITCHINGFEATURES PACKAGE DRAWING (UNIT: mm) Gate drive available at logic level (VGS = -4 V) High current control available in smalldimension due to low RDS(on) ( 0.25 ) 2SJ132-Z is a lead process product and is dealfor mounting a hybrid IC.QUALITY GRADES StandardP

SMD Type MOSFETP-Channel MOSFET2SJ130STO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features4 VDS (V) =-300V ID =-1 A (VGS =-10V)0.127+0.10.80-0.1 RDS(ON) 8.5 (VGS =-10V) D max High speed switching Low drive currentG+ 0.12.3 0.60- 0.1 1 Gate+0.154.60 -0.15 2 Drain3 Source4 DrainS Ab

isc P-Channel MOSFET Transistor 2SJ139FEATURESDrain Current : I =-10@ T =25D CDrain Source Voltage-: V = -100(Min)DSSStatic Drain-Source On-Resistance: R = 0.3(Max)@V = -10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDC-DC converter, power switch.ABSOLUTE MAXIMUM RATINGS(T