SI5476DU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SI5476DU
   Código: AA*
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 12 nC
   trⓘ - Tiempo de subida: 150 nS
   Cossⓘ - Capacitancia de salida: 90 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.034 Ohm
   Paquete / Cubierta: POWERPAK

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SI5476DU Datasheet (PDF)

..1. Size:182K vishay
si5476du.pdf

New ProductSi5476DUVishay SiliconixN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.034 at VGS = 10 V 12 New Thermally Enhanced PowerPAKRoHS60 10.5 nC0.041 at VGS = 4.5 V 12COMPLIANTChipFET Package- Small Footprint AreaPowerPAK ChipFET Single- Low On-Resistanc

9.1. Size:224K vishay
si5475dc.pdf

Si5475DCVishay SiliconixP-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.031 at VGS = - 4.5 V - 7.6 TrenchFET Power MOSFETs0.041 at VGS = - 2.5 V 1.8 V Rated- 12 - 6.6 Compliant to RoHS Directive 2002/95/EC0.054 at VGS = - 1.8 V - 5.81206-8 ChipFETS1DD D

9.2. Size:213K vishay
si5475ddc.pdf

New ProductSi5475DDCVishay SiliconixP-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFET0.032 at VGS = - 4.5 V - 6aRoHS0.040 at VGS = - 2.5 V - 12- 6a 20 nCCOMPLIANTAPPLICATIONS0.052 at VGS = - 1.8 V - 6a Load Switch for Portable Devices1206-8 ChipFET1 SDD DGD D

9.3. Size:209K vishay
si5475dd.pdf

9.4. Size:217K vishay
si5471dc.pdf

New ProductSi5471DCVishay Siliconix P-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a, g Qg (Typ.)Definition TrenchFET Power MOSFET0.020 at VGS = - 4.5 V - 6 Compliant to RoHS Directive 2002/95/EC0.028 at VGS = - 2.5 V - 6- 20 30 nCAPPLICATIONS0.062 at VGS = - 1.8 V - 6 Load

9.5. Size:201K vishay
si5473dc.pdf

Si5473DCVishay SiliconixP-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.027 at VGS = - 4.5 V - 8.1 TrenchFET Power MOSFETs0.0335 at VGS = - 2.5 V - 12 - 7.3 Low RDS(on) and Excellent Power Handling0.045 at VGS = - 1.8 V - 6.3in Compact FootprintAPPLICATIONS1206-8 C

9.6. Size:233K vishay
si5475bdc.pdf

Si5475BDCVishay SiliconixP-Channel 12-V (D-S) MOSFETPRODUCT SUMMARY FEATURESVDS (V) RDS(on) () Halogen-free According to IEC 61249-2-21 ID (A)a Qg (Typ.)Available0.028 at VGS = - 4.5 V - 6 TrenchFET Power MOSFET: 1.8 V Rated- 12 0.039 at VGS = - 2.5V - 6 15.5 nC0.054 at VGS = - 1.8 V - 61206-8 ChipFET S 1 D G D D D D Marking Code D G BN XXX

9.7. Size:229K vishay
si5475bd.pdf

9.8. Size:147K vishay
si5479du.pdf

Si5479DUVishay SiliconixP-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.021 at VGS = - 4.5 V - 16.9 New Thermally Enhanced PowerPAK RoHS0.028 at VGS = - 2.5 V - 16 21 nC- 12 COMPLIANT ChipFET Package0.039 at VGS = - 1.8 V - 16- Small Footprint Area- Low On-Resistan

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