SI5476DU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

New Product Si5476DU Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.034 at VGS = 10 V 12 New Thermally Enhanced PowerPAK RoHS 60 10.5 nC 0.041 at VGS = 4.5 V 12 COMPLIANT ChipFET Package - Small Footprint Area PowerPAK ChipFET Single - Low On-Resistanc

Si5475DC Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.031 at VGS = - 4.5 V - 7.6 TrenchFET Power MOSFETs 0.041 at VGS = - 2.5 V 1.8 V Rated - 12 - 6.6 Compliant to RoHS Directive 2002/95/EC 0.054 at VGS = - 1.8 V - 5.8 1206-8 ChipFET S 1 D D D

New Product Si5475DDC Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( )ID (A) Qg (Typ.) TrenchFET Power MOSFET 0.032 at VGS = - 4.5 V - 6a RoHS 0.040 at VGS = - 2.5 V - 12 - 6a 20 nC COMPLIANT APPLICATIONS 0.052 at VGS = - 1.8 V - 6a Load Switch for Portable Devices 1206-8 ChipFET 1 S D D D G D D

New Product Si5475DDC Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( )ID (A) Qg (Typ.) TrenchFET Power MOSFET 0.032 at VGS = - 4.5 V - 6a RoHS 0.040 at VGS = - 2.5 V - 12 - 6a 20 nC COMPLIANT APPLICATIONS 0.052 at VGS = - 1.8 V - 6a Load Switch for Portable Devices 1206-8 ChipFET 1 S D D D G D D

New Product Si5471DC Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, g Qg (Typ.) Definition TrenchFET Power MOSFET 0.020 at VGS = - 4.5 V - 6 Compliant to RoHS Directive 2002/95/EC 0.028 at VGS = - 2.5 V - 6 - 20 30 nC APPLICATIONS 0.062 at VGS = - 1.8 V - 6 Load

Si5473DC Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.027 at VGS = - 4.5 V - 8.1 TrenchFET Power MOSFETs 0.0335 at VGS = - 2.5 V - 12 - 7.3 Low RDS(on) and Excellent Power Handling 0.045 at VGS = - 1.8 V - 6.3 in Compact Footprint APPLICATIONS 1206-8 C

Si5475BDC Vishay Siliconix P-Channel 12-V (D-S) MOSFET PRODUCT SUMMARY FEATURES VDS (V) RDS(on) ( ) Halogen-free According to IEC 61249-2-21 ID (A)a Qg (Typ.) Available 0.028 at VGS = - 4.5 V - 6 TrenchFET Power MOSFET 1.8 V Rated - 12 0.039 at VGS = - 2.5V - 6 15.5 nC 0.054 at VGS = - 1.8 V - 6 1206-8 ChipFET S 1 D G D D D D Marking Code D G BN XXX

Si5475BDC Vishay Siliconix P-Channel 12-V (D-S) MOSFET PRODUCT SUMMARY FEATURES VDS (V) RDS(on) ( ) Halogen-free According to IEC 61249-2-21 ID (A)a Qg (Typ.) Available 0.028 at VGS = - 4.5 V - 6 TrenchFET Power MOSFET 1.8 V Rated - 12 0.039 at VGS = - 2.5V - 6 15.5 nC 0.054 at VGS = - 1.8 V - 6 1206-8 ChipFET S 1 D G D D D D Marking Code D G BN XXX

Si5479DU Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.021 at VGS = - 4.5 V - 16.9 New Thermally Enhanced PowerPAK RoHS 0.028 at VGS = - 2.5 V - 16 21 nC - 12 COMPLIANT ChipFET Package 0.039 at VGS = - 1.8 V - 16 - Small Footprint Area - Low On-Resistan