SI6467BDQ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Si6467BDQ Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( )ID (A) Pb-free TrenchFET Power MOSFETs 0.0125 at VGS = - 4.5 V Available - 8.0 RoHS* 0.0155 at VGS = - 2.5 V - 12 - 7.0 COMPLIANT 0.020 at VGS = - 1.8 V - 6.0 S* TSSOP-8 G D D 1 8 * Source Pins 2, 3, 6 and 7 S S must be tied common. 2 7

Si6467DQ Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.014 @ VGS = -4.5 V "8.0 -12 0.019 @ VGS = -2.5 V "7.0 0.027 @ VGS = -1.8 V "5.8 S* TSSOP-8 D D G 1 8 D *Source Pins 2, 3, 6 and 7 S S must be tied common 2 7 Si6467DQ S S 3 6 G D 4 5 Top View D ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Lim

Si6466ADQ Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( )ID (A) TrenchFET Power MOSFETs 0.014 at VGS = 4.5 V 8.1 20 100 % Rg Tested RoHS 0.020 at VGS = 2.5 V 6.6 COMPLIANT D TSSOP-8 * Source Pins 2, 3, 6 and 7 must be tied common. G D D 1 8 S S 2 7 S S 3 6 G D 4 5 Top View S* Ordering Info

Si6469DQ Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( )ID (A) TrenchFET Power MOSFETs 1.8 V Rated 0.028 at VGS = - 4.5 V 6.0 RoHS 0.031 at VGS = - 3.3 V 5.8 COMPLIANT - 8 0.040 at VGS = - 2.5 V 5.0 0.065 at VGS = - 1.8 V 3.6 S TSSOP-8 G D D 1 8 S S 2 7 Si6469DQ S S 3 6 G D 4 5

Si6463BDQ Vishay Siliconix P-Channel 1.8 V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.015 at VGS = - 4.5 V - 7.4 TrenchFET Power MOSFET 0.020 at VGS = - 2.5 V - 20 - 6.3 Compliant to RoHS Directive 2002/95/EC 0.027 at VGS = - 1.8 V - 5.5 S* G TSSOP-8 * Source Pins 2, 3, 6 and 7

Si6465DQ Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( )ID (A) TrenchFET Power MOSFETs 1.8 V Rated 0.012 at VGS = - 4.5 V 8.8 RoHS 0.017 at VGS = - 2.5 V - 8 7.4 COMPLIANT 0.025 at VGS = - 1.8 V 6.0 S* TSSOP-8 G * Source Pins 2, 3, 6 and 7 D D 1 8 must be tied common S S 2 7 Si6465DQ S

Si6466DQ Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A) D 100% Rg Tested 0.014 @ VGS = 4.5 V 7.8 20 20 0.021 @ VGS = 2.5 V 6.3 D TSSOP-8 D D 1 8 D * Source Pins 2, 3, 6 and 7 S S must be tied common. 2 7 G S S 3 6 G D 4 5 Top View S* Ordering Information Si6466DQ-T1 N-Channel MOSFET ABSOLU

Specification Comparison Vishay Siliconix Si6463BDQ vs. Si6463ADQ Description P-Channel, 1.8 V (G-S) MOSFET Package TSSOP-8 Pin Out Identical Part Number Replacements Si6463BDQ-T1 Replaces Si6463ADQ-T1 Si6463BDQ-T1-E3 (Lead (Pb)-free version) Replaces Si6463ADQ-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Symbol Si6463BDQ Si6463ADQ Unit VDS Drain-Sou