SI6467BDQ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SI6467BDQ
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.05 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 12 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 6.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 0.85 V
   Qgⓘ - Carga de la puerta: 46 nC
   trⓘ - Tiempo de subida: 85 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0125 Ohm
   Paquete / Cubierta: TSSOP-8

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SI6467BDQ Datasheet (PDF)

..1. Size:202K vishay
si6467bdq.pdf

Si6467BDQVishay SiliconixP-Channel 1.8-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)Pb-free TrenchFET Power MOSFETs 0.0125 at VGS = - 4.5 V Available- 8.0RoHS*0.0155 at VGS = - 2.5 V - 12 - 7.0COMPLIANT0.020 at VGS = - 1.8 V - 6.0S*TSSOP-8 GD D 1 8 * Source Pins 2, 3, 6 and 7 S S must be tied common.2 7

8.1. Size:45K vishay
si6467dq.pdf

Si6467DQVishay SiliconixP-Channel 1.8-V (G-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.014 @ VGS = -4.5 V "8.0-12 0.019 @ VGS = -2.5 V "7.00.027 @ VGS = -1.8 V "5.8S*TSSOP-8D D G1 8D *Source Pins 2, 3, 6 and 7S S must be tied common2 7Si6467DQS S3 6G D4 5Top ViewDABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Lim

9.1. Size:71K vishay
si6466adq.pdf

Si6466ADQVishay SiliconixN-Channel 2.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) TrenchFET Power MOSFETs0.014 at VGS = 4.5 V 8.120 100 % Rg Tested RoHS0.020 at VGS = 2.5 V 6.6COMPLIANTDTSSOP-8* Source Pins 2, 3, 6 and 7 must be tied common.GD D1 8S S2 7S S3 6G D4 5Top View S*Ordering Info

9.2. Size:211K vishay
si6469dq.pdf

Si6469DQVishay SiliconixP-Channel 1.8-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) TrenchFET Power MOSFETs: 1.8 V Rated 0.028 at VGS = - 4.5 V 6.0RoHS0.031 at VGS = - 3.3 V 5.8COMPLIANT- 80.040 at VGS = - 2.5 V 5.00.065 at VGS = - 1.8 V 3.6STSSOP-8GD D1 8S S2 7Si6469DQS S3 6G D4 5

9.3. Size:215K vishay
si6463bdq.pdf

Si6463BDQVishay SiliconixP-Channel 1.8 V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.015 at VGS = - 4.5 V - 7.4 TrenchFET Power MOSFET 0.020 at VGS = - 2.5 V - 20 - 6.3 Compliant to RoHS Directive 2002/95/EC0.027 at VGS = - 1.8 V - 5.5S*GTSSOP-8* Source Pins 2, 3, 6 and 7

9.4. Size:193K vishay
si6465dq.pdf

Si6465DQVishay SiliconixP-Channel 1.8-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) TrenchFET Power MOSFETs: 1.8 V Rated 0.012 at VGS = - 4.5 V 8.8RoHS0.017 at VGS = - 2.5 V - 8 7.4COMPLIANT0.025 at VGS = - 1.8 V 6.0S*TSSOP-8G* Source Pins 2, 3, 6 and 7D D1 8 must be tied commonS S2 7Si6465DQS

9.5. Size:70K vishay
si6466dq.pdf

Si6466DQVishay SiliconixN-Channel 2.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)D 100% Rg Tested0.014 @ VGS = 4.5 V 7.820200.021 @ VGS = 2.5 V 6.3DTSSOP-8D D1 8D * Source Pins 2, 3, 6 and 7 S S must be tied common.2 7GS S3 6G D4 5Top ViewS*Ordering Information: Si6466DQ-T1N-Channel MOSFETABSOLU

9.6. Size:55K vishay
si6463bdq vs si6463adq.pdf

Specification ComparisonVishay SiliconixSi6463BDQ vs. Si6463ADQDescription: P-Channel, 1.8 V (G-S) MOSFETPackage: TSSOP-8Pin Out: IdenticalPart Number Replacements:Si6463BDQ-T1 Replaces Si6463ADQ-T1Si6463BDQ-T1-E3 (Lead (Pb)-free version) Replaces Si6463ADQ-T1ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise notedParameter Symbol Si6463BDQ Si6463ADQ UnitVDSDrain-Sou

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