SI6963BDQ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Si6963BDQ Vishay Siliconix Dual P-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( )ID (A) 0.045 at VGS = - 4.5 V - 3.9 - 20 RoHS 0.080 at VGS = - 2.5 V - 3.0 COMPLIANT S1 S2 TSSOP-8 G1 G2 D1 1 D2 8 S1 2 S2 7 Si6963BDQ S1 3 S2 6 G1 4 G2 5 Top View D1 D2 Ordering Information Si6963BDQ-T1-GE3 (Lead (Pb)-free and Halogen-free)

Si6963DQ New Product Vishay Siliconix Dual P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.050 @ VGS = -4.5 V -3.5 -20 20 0.085 @ VGS = -2.5 V -2.7 S1 S2 TSSOP-8 D1 1 D D2 G1 G2 8 S1 2 S2 7 Si6963DQ S1 3 S2 6 G1 4 G2 5 Top View D1 D2 P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol

Si6966DQ Vishay Siliconix Dual N-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( )ID (A) Pb-free TrenchFET Power MOSFETs 2.5 V Rated 0.030 at VGS = 4.5 V 4.5 Available 20 0.040 at VGS = 2.5 V 3.9 RoHS* COMPLIANT D1 D2 TSSOP-8 D1 1 D2 8 G1 G2 S1 2 S2 7 Si6966DQ S1 3 S2 6 G1 4 G2 5 Top View S1 S2

Si6968DQ Vishay Siliconix N-Channel 2.5-V (G-S) Battery Switch PRODUCT SUMMARY VDS (V) RDS(ON) (W) ID (A) 0.022 @ VGS = 4.5 V "6.5 20 20 0.030 @ VGS = 2.5 V "5.5 DD TSSOP-8 D D 1 8 D S1 2 S2 7 Si6968DQ G1 G2 S1 3 S2 6 G1 4 G2 5 Top View S1 S2 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA =25_C UNLESS OTHERWISE NOTED) PARAMETER SYMBOL LIMIT UNIT Drain-S

SMD Type IC SMD Type MOSFET Dual N-Channel 2.5-V (G-S) MOSFET Common Drain, ESD Protection KI6968BEDQ(SI6968BEDQ) TSSOP-8 Unit mm Features VDS=20V,rDS(on)=0.022 @VGS=4.5V,ID=6.5A VDS=20V,rDS(on)=0.030 @VGS=2.5V,ID=5.5A N-Channel N-Channel * Typical value by design Absolute Maximum Ratings Ta = 25 Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS 20 V Gate-Sou

Si6968BEDQ Vishay Siliconix Dual N-Channel 2.5-V (G-S) MOSFET Common Drain, ESD Protection FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( )ID (A) Pb-free TrenchFET Power MOSFETs 0.022 at VGS = 4.5 V Available 6.5 ESD Protected 3000 V 20 RoHS* 0.030 at VGS = 2.5 V 5.5 COMPLIANT D D TSSOP-8 D D 1 8 * 300 * 300 S S

Si6969BDQ Vishay Siliconix Dual P-Channel 1.8-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( )ID (A) Pb-free TrenchFET Power MOSFETs 0.030 at VGS = - 4.5 V - 4.6 Available 0.040 at VGS = - 2.5 V - 12 - 3.8 RoHS* COMPLIANT 0.055 at VGS = - 1.8 V - 3.0 S1 S2 TSSOP-8 G1 G2 D1 1 D2 8 S1 2 S2 7 Si6969BDQ S1 3 S2 6

Si6968EDQ-REVA Vishay Siliconix Dual N-Channel 2.5-V (G-S) MOSFET Common Drain, ESD Protection FEATURES D TrenchFETr Power MOSFET PRODUCT SUMMARY D ESD Protected 3000 V VDS (V) rDS(on) ( ) ID (A) 0.022 @ VGS =4.5V 6.5 20 20 0.030 @ VGS =2.5V 5.5 D D TSSOP-8 *130 D D *130 1 D 8 S1 2 Si6968EDQ-REVA 7 S2 G1 G2 S1 3 S2 6 G1 4 G2 5 Top View S1 S2 N-Channel N

Si6969DQ Vishay Siliconix Dual P-Channel 1.8-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( )ID (A) TrenchFET Power MOSFETs 1.8 V Rated 0.034 at VGS = - 4.5 V 4.6 RoHS 0.050 at VGS = - 2.5 V - 12 3.8 COMPLIANT 0.075 at VGS = - 1.8 V 3.0 S1 S2 TSSOP-8 D1 1 D2 8 G1 G2 S1 2 S2 7 Si6969DQ S1 3 S2 6 G1 4 G2 5 Top View O

Si6965DQ Vishay Siliconix P-Channel 2.5-V (G-S) Battery Switch PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.035 @ VGS = 4.5 V "5.0 20 20 0.060 @ VGS = 2.5 V "3.9 S1 S2 TSSOP-8 D D G1 G2 1 8 D S1 2 S2 7 Si6965DQ S1 3 S2 6 G1 4 G2 5 Top View D D P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit

Si6968ADQ New Product Vishay Siliconix N-Channel 2.5-V (G-S) Battery Switch PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.022 @ VGS = 4.5 V "6.2 20 20 0.030 @ VGS = 2.5 V "5.3 DD TSSOP-8 D D 1 8 D S1 2 S2 7 Si6968ADQ G1 G2 S1 3 S2 6 G1 4 G2 5 Top View S1 S2 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10

Si6966EDQ Vishay Siliconix Dual N-Channel 2.5-V (G-S) MOSFET, ESD Protected FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( )ID (A) ESD Protected 4000 V 0.030 at VGS = 4.5 V 5.2 20 RoHS 0.040 at VGS = 2.5 V 4.5 COMPLIANT D1 D2 TSSOP-8 100 100 D1 1 D2 8 G1 G2 S1 2 S2 7 Si6966EDQ S1 3 S2 6 G1 4 G2 5 Top View S1 S2 N-Channel N-Cha

Si6967DQ Vishay Siliconix Dual P-Channel 1.8-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( )ID (A) TrenchFET Power MOSFETs 1.8 V Rated 0.030 at VGS = - 4.5 V 5.0 RoHS 0.045 at VGS = - 2.5 V - 8 4.0 COMPLIANT 0.070 at VGS = - 1.8 V 3.0 S1 S2 TSSOP-8 D1 1 D2 8 G1 G2 S1 2 S2 7 Si6967DQ S1 3 S2 6 G1 4 G2 5 Top View D1