SI6963BDQ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SI6963BDQ
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.83 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 3.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm
Paquete / Cubierta: TSSOP-8

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SI6963BDQ Datasheet (PDF)

..1. Size:217K vishay
si6963bdq.pdf

Si6963BDQVishay SiliconixDual P-Channel 2.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)0.045 at VGS = - 4.5 V - 3.9- 20RoHS0.080 at VGS = - 2.5 V - 3.0COMPLIANTS1 S2TSSOP-8G1 G2D1 1 D28S1 2 S27Si6963BDQS1 3 S26G1 4 G25Top ViewD1 D2Ordering Information: Si6963BDQ-T1-GE3 (Lead (Pb)-free and Halogen-free)

8.1. Size:52K vishay
si6963dq.pdf

Si6963DQNew ProductVishay SiliconixDual P-Channel 2.5-V (G-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.050 @ VGS = -4.5 V -3.5-20200.085 @ VGS = -2.5 V -2.7 S1 S2TSSOP-8D1 1 D D2 G1 G28S1 2 S27Si6963DQS1 3 S26G1 4 G25Top ViewD1 D2P-Channel MOSFET P-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol

9.1. Size:209K vishay
si6966dq.pdf

Si6966DQVishay SiliconixDual N-Channel 2.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ()ID (A)Pb-free TrenchFET Power MOSFETs: 2.5 V Rated 0.030 at VGS = 4.5 V 4.5Available200.040 at VGS = 2.5 V 3.9RoHS*COMPLIANTD1 D2TSSOP-8D1 1 D28G1 G2S1 2 S27Si6966DQS1 3 S26G1 4 G25Top ViewS1 S2

9.2. Size:58K vishay
si6968dq.pdf

Si6968DQVishay SiliconixN-Channel 2.5-V (G-S) Battery SwitchPRODUCT SUMMARYVDS (V) RDS(ON) (W) ID (A)0.022 @ VGS = 4.5 V "6.520200.030 @ VGS = 2.5 V "5.5DDTSSOP-8D D1 8DS1 2 S27Si6968DQ G1 G2S1 3 S26G1 4 G25Top ViewS1 S2N-Channel MOSFET N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA =25_C UNLESS OTHERWISE NOTED)PARAMETER SYMBOL LIMIT UNITDrain-S

9.3. Size:52K vishay
si6968bedq.pdf

SMD Type ICSMD Type MOSFETDual N-Channel 2.5-V (G-S) MOSFETCommon Drain, ESD ProtectionKI6968BEDQ(SI6968BEDQ)TSSOP-8Unit: mmFeaturesVDS=20V,rDS(on)=0.022 @VGS=4.5V,ID=6.5AVDS=20V,rDS(on)=0.030 @VGS=2.5V,ID=5.5AN-ChannelN-Channel* Typical value by designAbsolute Maximum Ratings Ta = 25Parameter Symbol 10 secs Steady State UnitDrain-Source Voltage VDS 20VGate-Sou

9.4. Size:218K vishay
si6968be.pdf

Si6968BEDQVishay SiliconixDual N-Channel 2.5-V (G-S) MOSFET Common Drain, ESD ProtectionFEATURESPRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ()ID (A)Pb-free TrenchFET Power MOSFETs0.022 at VGS = 4.5 V Available6.5 ESD Protected: 3000 V 20RoHS*0.030 at VGS = 2.5 V 5.5COMPLIANTD DTSSOP-8 D D 1 8 * 300 * 300 S S

9.5. Size:212K vishay
si6969bdq.pdf

Si6969BDQVishay SiliconixDual P-Channel 1.8-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)Pb-free TrenchFET Power MOSFETs 0.030 at VGS = - 4.5 V - 4.6Available0.040 at VGS = - 2.5 V - 12 - 3.8RoHS*COMPLIANT0.055 at VGS = - 1.8 V - 3.0S1 S2TSSOP-8G1 G2D1 1 D28S1 2 S27Si6969BDQS1 3 S26

9.6. Size:99K vishay
si6968edq-reva.pdf

Si6968EDQ-REVAVishay SiliconixDual N-Channel 2.5-V (G-S) MOSFETCommon Drain, ESD ProtectionFEATURESD TrenchFETr Power MOSFETPRODUCT SUMMARYD ESD Protected: 3000 VVDS (V) rDS(on) () ID (A)0.022 @ VGS =4.5V 6.520200.030 @ VGS =2.5V 5.5D DTSSOP-8*130 D D *130 1 D 8S1 2 Si6968EDQ-REVA 7 S2 G1 G2S1 3 S26G1 4 G25Top ViewS1 S2N-Channel N

9.7. Size:213K vishay
si6969dq.pdf

Si6969DQVishay SiliconixDual P-Channel 1.8-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ()ID (A) TrenchFET Power MOSFETs: 1.8 V Rated0.034 at VGS = - 4.5 V 4.6RoHS0.050 at VGS = - 2.5 V - 12 3.8COMPLIANT0.075 at VGS = - 1.8 V 3.0S1 S2TSSOP-8D1 1 D28G1 G2S1 2 S27Si6969DQS1 3 S26G1 4 G25Top ViewO

9.8. Size:60K vishay
si6965dq.pdf

Si6965DQVishay SiliconixP-Channel 2.5-V (G-S) Battery SwitchPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.035 @ VGS = 4.5 V "5.020200.060 @ VGS = 2.5 V "3.9S1 S2TSSOP-8D D G1 G21 8DS1 2 S27Si6965DQS1 3 S26G1 4 G25Top ViewD DP-Channel MOSFET P-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit

9.9. Size:60K vishay
si6968adq.pdf

Si6968ADQNew ProductVishay SiliconixN-Channel 2.5-V (G-S) Battery SwitchPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.022 @ VGS = 4.5 V "6.220200.030 @ VGS = 2.5 V "5.3DDTSSOP-8D D1 8DS1 2 S27Si6968ADQ G1 G2S1 3 S26G1 4 G25Top ViewS1 S2N-Channel MOSFET N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol 10

9.10. Size:210K vishay
si6966edq.pdf

Si6966EDQVishay SiliconixDual N-Channel 2.5-V (G-S) MOSFET, ESD ProtectedFEATURESPRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ()ID (A) ESD Protected: 4000 V 0.030 at VGS = 4.5 V 5.220RoHS0.040 at VGS = 2.5 V 4.5COMPLIANTD1 D2TSSOP-8100 100 D1 1 D28G1 G2S1 2 S27Si6966EDQS1 3 S26G1 4 G25Top ViewS1 S2N-Channel N-Cha

9.11. Size:206K vishay
si6967dq.pdf

Si6967DQVishay SiliconixDual P-Channel 1.8-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ()ID (A) TrenchFET Power MOSFETs: 1.8 V Rated 0.030 at VGS = - 4.5 V 5.0RoHS0.045 at VGS = - 2.5 V - 8 4.0COMPLIANT0.070 at VGS = - 1.8 V 3.0S1 S2TSSOP-8D1 1 D28 G1 G2S1 2 S27Si6967DQS1 3 S26G1 4 G25Top ViewD1

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