SI6968BEDQ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SMD Type ICSMD Type MOSFETDual N-Channel 2.5-V (G-S) MOSFETCommon Drain, ESD ProtectionKI6968BEDQ(SI6968BEDQ)TSSOP-8Unit: mmFeaturesVDS=20V,rDS(on)=0.022 @VGS=4.5V,ID=6.5AVDS=20V,rDS(on)=0.030 @VGS=2.5V,ID=5.5AN-ChannelN-Channel* Typical value by designAbsolute Maximum Ratings Ta = 25Parameter Symbol 10 secs Steady State UnitDrain-Source Voltage VDS 20VGate-Sou

Si6968BEDQVishay SiliconixDual N-Channel 2.5-V (G-S) MOSFET Common Drain, ESD ProtectionFEATURESPRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ()ID (A)Pb-free TrenchFET Power MOSFETs0.022 at VGS = 4.5 V Available6.5 ESD Protected: 3000 V 20RoHS*0.030 at VGS = 2.5 V 5.5COMPLIANTD DTSSOP-8 D D 1 8 * 300 * 300 S S

Si6968DQVishay SiliconixN-Channel 2.5-V (G-S) Battery SwitchPRODUCT SUMMARYVDS (V) RDS(ON) (W) ID (A)0.022 @ VGS = 4.5 V "6.520200.030 @ VGS = 2.5 V "5.5DDTSSOP-8D D1 8DS1 2 S27Si6968DQ G1 G2S1 3 S26G1 4 G25Top ViewS1 S2N-Channel MOSFET N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA =25_C UNLESS OTHERWISE NOTED)PARAMETER SYMBOL LIMIT UNITDrain-S

Si6968EDQ-REVAVishay SiliconixDual N-Channel 2.5-V (G-S) MOSFETCommon Drain, ESD ProtectionFEATURESD TrenchFETr Power MOSFETPRODUCT SUMMARYD ESD Protected: 3000 VVDS (V) rDS(on) () ID (A)0.022 @ VGS =4.5V 6.520200.030 @ VGS =2.5V 5.5D DTSSOP-8*130 D D *130 1 D 8S1 2 Si6968EDQ-REVA 7 S2 G1 G2S1 3 S26G1 4 G25Top ViewS1 S2N-Channel N

Si6968ADQNew ProductVishay SiliconixN-Channel 2.5-V (G-S) Battery SwitchPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.022 @ VGS = 4.5 V "6.220200.030 @ VGS = 2.5 V "5.3DDTSSOP-8D D1 8DS1 2 S27Si6968ADQ G1 G2S1 3 S26G1 4 G25Top ViewS1 S2N-Channel MOSFET N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol 10