SI6968BEDQ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SMD Type IC SMD Type MOSFET Dual N-Channel 2.5-V (G-S) MOSFET Common Drain, ESD Protection KI6968BEDQ(SI6968BEDQ) TSSOP-8 Unit mm Features VDS=20V,rDS(on)=0.022 @VGS=4.5V,ID=6.5A VDS=20V,rDS(on)=0.030 @VGS=2.5V,ID=5.5A N-Channel N-Channel * Typical value by design Absolute Maximum Ratings Ta = 25 Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS 20 V Gate-Sou

Si6968BEDQ Vishay Siliconix Dual N-Channel 2.5-V (G-S) MOSFET Common Drain, ESD Protection FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( )ID (A) Pb-free TrenchFET Power MOSFETs 0.022 at VGS = 4.5 V Available 6.5 ESD Protected 3000 V 20 RoHS* 0.030 at VGS = 2.5 V 5.5 COMPLIANT D D TSSOP-8 D D 1 8 * 300 * 300 S S

Si6968DQ Vishay Siliconix N-Channel 2.5-V (G-S) Battery Switch PRODUCT SUMMARY VDS (V) RDS(ON) (W) ID (A) 0.022 @ VGS = 4.5 V "6.5 20 20 0.030 @ VGS = 2.5 V "5.5 DD TSSOP-8 D D 1 8 D S1 2 S2 7 Si6968DQ G1 G2 S1 3 S2 6 G1 4 G2 5 Top View S1 S2 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA =25_C UNLESS OTHERWISE NOTED) PARAMETER SYMBOL LIMIT UNIT Drain-S

Si6968EDQ-REVA Vishay Siliconix Dual N-Channel 2.5-V (G-S) MOSFET Common Drain, ESD Protection FEATURES D TrenchFETr Power MOSFET PRODUCT SUMMARY D ESD Protected 3000 V VDS (V) rDS(on) ( ) ID (A) 0.022 @ VGS =4.5V 6.5 20 20 0.030 @ VGS =2.5V 5.5 D D TSSOP-8 *130 D D *130 1 D 8 S1 2 Si6968EDQ-REVA 7 S2 G1 G2 S1 3 S2 6 G1 4 G2 5 Top View S1 S2 N-Channel N

Si6968ADQ New Product Vishay Siliconix N-Channel 2.5-V (G-S) Battery Switch PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.022 @ VGS = 4.5 V "6.2 20 20 0.030 @ VGS = 2.5 V "5.3 DD TSSOP-8 D D 1 8 D S1 2 S2 7 Si6968ADQ G1 G2 S1 3 S2 6 G1 4 G2 5 Top View S1 S2 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10