SI7114DN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SI7114DN
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 11.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 18.3 nC
   trⓘ - Tiempo de subida: 10 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0075 Ohm
   Paquete / Cubierta: POWERPAK-1212-8

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SI7114DN Datasheet (PDF)

..1. Size:532K vishay
si7114dn.pdf

Si7114DNVishay SiliconixN-Channel 30-V (D-S) Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Gen II Power MOSFET0.0075 at VGS = 10 V RoHS 18.330 12.5 COMPLIANT New Low Thermal Resistance PowerPAK 0.010 at VGS = 4.5 V 15.9Package with Low 1.07 mm Profile 100 % Rg TestedA

8.1. Size:575K vishay
si7114adn.pdf

New ProductSi7114ADNVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a, g Qg (Typ.) TrenchFET Power MOSFETRoHS 100 % Rg Tested0.0075 at VGS = 10 V 35COMPLIANT 30 10.2 nC 100 % UIS Tested0.0098 at VGS = 4.5 V 35APPLICATIONSPowerPAK 1212-8 Synchronous RectificationS3.30

8.2. Size:572K vishay
si7114ad.pdf

9.1. Size:532K vishay
si7110dn.pdf

Si7110DNVishay SiliconixN-Channel 20-V (D-S) Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Gen II Power MOSFET0.0053 at VGS = 10 V RoHS21.120 14 nC New Low Thermal Resistance PowerPAK COMPLIANT 0.0078 at VGS = 4.5 V 17.4Package with Low 1.07 mm Profile PWM Optimized

9.2. Size:547K vishay
si7115dn.pdf

Si7115DNVishay SiliconixP-Channel 150 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.) Definition TrenchFET Power MOSFET0.295 at VGS = - 10 V - 8.9e Low Thermal Resistance PowerPAK- 150 23.2 nC0.315 at VGS = - 6 V - 8.6ePackage with Small Size and Low 1 mm Profile 100 % Rg and UI

9.3. Size:542K vishay
si7113dn.pdf

Si7113DNVishay SiliconixP-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFET0.134 at VGS = - 10 V - 13.2e Low Thermal Resistance PowerPAKRoHS- 100 16.5 nCPackage with Small Size and Low 1.07 mm COMPLIANT0.145 at VGS = - 4.5V - 12.7eProfile UIS and Rg Tested

9.4. Size:549K vishay
si7112dn.pdf

Si7112DNVishay SiliconixN-Channel 30 V (D-S) Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () DefinitionID (A) TrenchFET Power MOSFET0.0075 at VGS = 10 V 17.830 New Low Thermal Resistance PowerPAK 0.0082 at VGS = 4.5 V 17.0Package with Low 1.07 mm Profile 100 % Rg Tested Complia

9.5. Size:555K vishay
si7117dn.pdf

Si7117DNVishay SiliconixP-Channel 150 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition TrenchFET Power MOSFETs1.2 at VGS = - 10 V - 2.17- 150 7.7 nC PowerPAK Package1.3 at VGS = - 6 V - 2.1- Low Thermal Resistance- Low 1.07 mm Profile Compliant to RoHS Directive 2002/

9.6. Size:252K vishay
si7113adn.pdf

Si7113ADNwww.vishay.comVishay SiliconixP-Channel 100 V (D-S) MOSFETFEATURESPowerPAK 1212-8 SingleD TrenchFET power MOSFETD8D7 100 % Rg and UIS testedD65 Material categorization: for definitions of compliance please seewww.vishay.com/doc?9991211APPLICATIONSS2SS3S Active clamp in intermediate DC/DC4S1power suppliesG

9.7. Size:532K vishay
si7116dn.pdf

Si7116DNVishay SiliconixN-Channel 40-V (D-S) Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFET0.0078 at VGS = 10 V RoHS16.440 15 nC COMPLIANT New Low Thermal Resistance PowerPAK 0.010 at VGS = 4.5 V 14.5Package with Low 1.07 mm Profile PWM Optimized 100 %

9.8. Size:564K vishay
si7119dn.pdf

Si7119DNVishay SiliconixP-Channel 200-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Available1.05 at VGS = - 10 V - 3.8e TrenchFET Power MOSFET- 200 10.6 nC Low Thermal Resistance PowerPAK1.10 at VGS = - 6.0V - 3.6ePackage with Small Size and Low 1.07 mm Profile 100 % UIS and

9.9. Size:2595K kexin
si7119dn.pdf

SMD Type MOSFETP-Channel MOSFETSI7119DN (KI7119DN) Features VDS (V) =-200V ID =-3.8 A (VGS =-10V) RDS(ON) 1.05 (VGS =-10V) RDS(ON) 1.1 (VGS =-6V)SG PowerPAK 1212-8 (QFN5X6)S 3.30 mm 3.30 mm 1 S 2 S 3 G D4 D 8 D 7 D 6 D 5 Bottom View Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Dra

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