SI7120DN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SI7120DN
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.5 V
   Qgⓘ - Carga de la puerta: 45 nC
   trⓘ - Tiempo de subida: 12 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.019 Ohm
   Paquete / Cubierta: POWERPAK-1212-8

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SI7120DN Datasheet (PDF)

..1. Size:533K vishay
si7120dn.pdf

Si7120DNVishay SiliconixN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A) TrenchFET Power MOSFET0.019 at VGS = 10 V RoHS1060 COMPLIANT New Low Thermal Resistance0.028 at VGS = 4.5 V 8.2 PowerPAK 1212-8 Package with Low 1.07 mm Profile 100 % Rg TestedAPPLICATIONSPowerPAK 1212-8

8.1. Size:576K vishay
si7120adn.pdf

New ProductSi7120ADNVishay SiliconixN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.021 at VGS = 10 V 9.5 TrenchFET Power MOSFET600.031 at VGS = 4.5 V 7.9 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECPowerPAK 1212-8APPLICATIONS

9.1. Size:547K vishay
si7121dn.pdf

New ProductSi7121DNVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFET0.018 at VGS = - 10 V - 16d 100% Rg TestedRoHS- 30 22 nCCOMPLIANT 100% UIS Tested0.0305 at VGS = - 4.5 V - 16dAPPLICATIONSPowerPAK 1212-8 Notebook Battery ChargingS Noteb

9.2. Size:562K vishay
si7129dn.pdf

New ProductSi7129DNVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e,f Qg (Typ.)Definition0.0114 at VGS = - 10 V - 35 TrenchFET Power MOSFET- 30 24.6 nC Low Thermal Resistance PowerPAK0.0200 at VGS = - 4.5V - 35Package with Small Size and Low 1.07 mm Profile

9.3. Size:574K vishay
si7123dn.pdf

New ProductSi7123DNVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.0106 at VGS = - 4.5 V - 16.0 TrenchFET Power MOSFET: 1.8 V Rated- 20 0.0136 at VGS = - 2.5 V - 14.1 Ultra Low On-Resistance for IncreasedBattery Life0.0189 at VGS = - 1.8 V - 12.0 New

9.4. Size:628K vishay
si7121adn.pdf

Si7121ADNwww.vishay.comVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () MAX. ID (A) Qg (TYP.) Low thermal resistance PowerPAK package0.0150 at VGS = -10 V -18 e 100 % Rg and UIS tested-30 0.0200 at VGS = -6 V -18 e 16 nC Material categorization:0.0260 at VGS = -4.5 V -18 eFor definitions

9.5. Size:2351K kexin
si7129dn.pdf

SMD Type MOSFETP-Channel MOSFETSI7129DN (KI7129DN)1212-8 (DFN) Features VDS (V) =-30V ID =-35 A (VGS =-10V)S 3.30 mm 3.30 mm RDS(ON) 11.4m (VGS =-10V)1 S 2 S RDS(ON) 20m (VGS =-4.5V)3 GS4 D 8 D 7 D 6 D G5 Bottom V iew D Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Sourc

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