SI7148DP MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Principales características: SI7148DP

..1. Size:303K vishay
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Si7148DP Vishay Siliconix N-Channel 75-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.011 at VGS = 10 V 28 TrenchFET Power MOSFET 75 33 nC 0.0145 at VGS = 4.5 V 28 100 % Rg Tested APPLICATIONS PowerPAK SO-8 Primary Side Switch S 6.15 mm 5.15 mm 1 S D 2 S 3 G

9.1. Size:337K vishay
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New Product Si7145DP Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.0026 at VGS = - 10 V - 60d TrenchFET Power MOSFET - 30 129 nC 100 % Rg Tested 0.00375 at VGS = - 4.5 V - 60d 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC PowerPA

9.2. Size:305K vishay
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Si7149ADP Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) Low On-Resistance for Low Voltage Drop Extended VGS max. Rating 25 V 0.0052 at VGS = - 10 V - 50d - 30 43.1 nC 100 % Rg and UIS Tested 0.0095 at VGS = - 4.5 V - 50d Material categorization For definitions of

9.3. Size:107K vishay
si7141dp.pdf pdf_icon

New Product Si7141DP Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.0019 at VGS = - 10 V - 60d TrenchFET Power MOSFET - 20 128 nC 100 % Rg Tested 0.0030 at VGS = - 4.5 V - 60d 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC PowerPAK