SI7149ADP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SI7149ADP
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 23.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 615 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0052 Ohm
   Paquete / Cubierta: POWERPAK-SO-8

Búsqueda de reemplazo de MOSFET SI7149ADP

SI7149ADP Datasheet (PDF)

..1. Size:305K vishay
si7149adp.pdf

Si7149ADPVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) Low On-Resistance for Low Voltage Drop Extended VGS max. Rating: 25 V0.0052 at VGS = - 10 V - 50d- 30 43.1 nC 100 % Rg and UIS Tested0.0095 at VGS = - 4.5 V - 50d Material categorization: For definitions of

8.1. Size:508K vishay
si7149dp.pdf

New ProductSi7149DPVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFET0.0052 at VGS = - 10 V - 50d 100% Rg Tested- 30 51 nC0.0094 at VGS = - 4.5 V - 50d 100% UIS TestedPowerPAK SO-8APPLICATIONS Battery and Load SwitchingS - Notebook ComputersS6.15 m

9.1. Size:337K vishay
si7145dp.pdf

New ProductSi7145DPVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.0026 at VGS = - 10 V - 60d TrenchFET Power MOSFET- 30 129 nC 100 % Rg Tested0.00375 at VGS = - 4.5 V - 60d 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECPowerPA

9.2. Size:107K vishay
si7141dp.pdf

New ProductSi7141DPVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.0019 at VGS = - 10 V - 60d TrenchFET Power MOSFET- 20 128 nC 100 % Rg Tested0.0030 at VGS = - 4.5 V - 60d 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECPowerPAK

9.3. Size:124K vishay
si7143dp.pdf

New ProductSi7143DPVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)e,f Qg (Typ.)Definition TrenchFET Power MOSFET0.0100 at VGS = - 10 V - 35- 30 24.6 nC Low Thermal Resistance PowerPAK0.0186 at VGS = - 4.5V - 35Package with Small Size and Low 1.07 mm Profile

9.4. Size:303K vishay
si7148dp.pdf

Si7148DPVishay SiliconixN-Channel 75-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.011 at VGS = 10 V 28 TrenchFET Power MOSFET75 33 nC0.0145 at VGS = 4.5 V 28 100 % Rg TestedAPPLICATIONSPowerPAK SO-8 Primary Side SwitchS6.15 mm 5.15 mm1SD2S3G

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

Liste

Recientemente añadidas las descripciónes de los transistores: