2N6661-LCC4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N6661-LCC4
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 6.25 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 90 V
|Id|ⓘ - Corriente continua de drenaje: 0.9 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 VCossⓘ - Capacitancia de salida: 50 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4 Ohm
Paquete / Cubierta: LCC4
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Otros transistores... 2N6660JANTXV , 2N6660-LCC4 , 2N6660-SM , 2N6661 , 2N6661-220M , 2N6661JAN , 2N6661JANTX , 2N6661JANTXV , TK10A60D , 2N6661SM , 2N6755 , 2N6756 , 2N6756JAN , 2N6756JANTX , 2N6756JANTXV , 2N6756JTX , 2N6756JTXV .
![2N6661-LCC4](https://alltransistors.com/images/us.png)
![2N6661-LCC4](https://alltransistors.com/images/es.png)
![2N6661-LCC4](https://alltransistors.com/images/ru.png)
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