SI7404DN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SI7404DN
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 8.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 39 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.013 Ohm
   Paquete / Cubierta: POWERPAK-1212-8

Búsqueda de reemplazo de MOSFET SI7404DN

SI7404DN Datasheet (PDF)

..1. Size:554K vishay
si7404dn.pdf

Si7404DNVishay SiliconixN-Channel 30 V (D-S) Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.013 at VGS = 10 V 13.3 TrenchFET Power MOSFET0.015 at VGS = 4.5 V 30 12.4 Compliant to RoHS Directive 2002/95/EC0.022 at VGS = 2.5 V 10.2APPLICATIONSPowerPAK 1212-8 Li-lon

9.1. Size:486K vishay
si7409adn.pdf

Si7409ADNVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Available0.019 at VGS = - 4.5 V - 11 TrenchFET Power MOSFET- 30 250.031 at VGS = - 2.5 V - 8.5 New Low Thermal Resistance PowerPAK Package with Low 1.07 mm Profile VDS Optimized for Load Switch

9.2. Size:564K vishay
si7405bdn.pdf

New ProductSi7405BDNVishay SiliconixP-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFET0.013 at VGS = - 4.5 V - 16aRoHS0.017 at VGS = - 2.5 V - 12- 16a 46 nCCOMPLIANTAPPLICATIONS0.024 at VGS = - 1.8 V - 16a Load Switch, PA Switch and Power Switch for Portab

9.3. Size:92K vishay
si7405dn.pdf

Si7405DNVishay SiliconixP-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETS: 1.8-V RatedVDS (V) rDS(on) ()ID (A)Pb-free New PowerPAK PackageAvailable0.016 at VGS = 4.5 V 13 Low Thermal Resistance, RthJCRoHS* Low 1.07-mm Profile0.022 at VGS = 2.5 V 11 12COMPLIANT0.028 at VGS = 1.8 V 9.8APPL

9.4. Size:534K vishay
si7407dn.pdf

Si7407DNVishay SiliconixP-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)Available TrenchFET Power MOSFETS: 1.8 V Rated0.012 at VGS = - 4.5 V - 15.6RoHS* New Low Thermal Resistance PowerPAKCOMPLIANT0.016 at VGS = - 2.5 V - 12 - 13.5 Package with Low 1.07 mm Profile Ultra-Low RDS(on)0.

9.5. Size:553K vishay
si7402dn.pdf

Si7402DNVishay SiliconixN-Channel 12 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.0057 at VGS = 4.5 V 20 TrenchFET Power MOSFET0.0067 at VGS = 2.5 V 12 18.8 New Low Thermal Resistance PowerPAK0.0085 at VGS = 1.8 V 16.5Package with Low 1.07 mm Profile Compliant to RoHS D

9.6. Size:539K vishay
si7403bdn.pdf

Si7403BDNVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Available0.074 at VGS = - 4.5 V - 8c TrenchFET Power MOSFET: 2.5 V Rated- 20 5.6 nC0.110 at VGS = - 2.5 V - 7.4 PowerPAK Package- Low Thermal Resistance- Low 1.07 mm ProfileAPPLICATIONSPowerPAK

9.7. Size:572K vishay
si7405bd.pdf

9.8. Size:93K vishay
si7401dn.pdf

Si7401DNVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETS: 1.8-V RatedVDS (V) rDS(on) ()ID (A)Pb-free New PowerPAK PackageAvailable0.021 at VGS = 4.5 V 11 Low Thermal Resistance, RthJCRoHS* Low 1.07-mm Profile0.028 at VGS = 2.5 V 9.820COMPLIANT0.034 at VGS = 1.8 V 8.9APPL

9.9. Size:47K vishay
si7403dn.pdf

Si7403DNNew ProductVishay SiliconixP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARY FEATURESD TrenchFETr Power MOSFETS: 2.5-V RatedVDS (V) rDS(on) (W) ID (A)D New PowerPAKt Package0.1 @ VGS = 4.5 V4.5 Low Thermal Resistance, RthJC20 Low 1.07-mm Profile0.135 @ VGS = 2.5 V 3.8APPLICATIONSD Load SwitchingD PA SwitchingS S SPowerPAKt 1212-8S3.3

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