SI7445DP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SI7445DP
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.9 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 V
   Qgⓘ - Carga de la puerta: 92 nC
   trⓘ - Tiempo de subida: 45 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0077 Ohm
   Paquete / Cubierta: POWERPAK-SO-8

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SI7445DP Datasheet (PDF)

..1. Size:460K vishay
si7445dp.pdf

Si7445DPVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Available0.0077 at VGS = - 4.5 V - 19 TrenchFET Power MOSFET New Low Thermal Resistance PowerPAK0.0094 at VGS = - 2.5 V - 17 - 20Package with Low 1.07 mm Profile0.0125 at VGS = - 1.8 V - 15 100 % Rg Tested

9.1. Size:457K vishay
si7448dp 2.pdf

Si7448DPVishay SiliconixN-Channel 20-V (D-S) Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Available0.0065 at VGS = 4.5 V 22 TrenchFET Power MOSFET20 New Low Thermal Resistance PowerPAK0.009 at VGS = 2.5 V 19 Package with Low 1.07 mm Profile 100 % Rg Tested APPLICATIONSPowerPAK S

9.2. Size:84K vishay
si7444dp.pdf

Si7444DPVishay SiliconixN-Channel 40-V (D-S) Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Available0.0061 at VGS = 10 V 40 23.6 105 TrenchFET Power MOSFET New Low Thermal Resistance PowerPAKPackage with Low 1.07 mm Profile 100 % Rg Tested High Threshold Voltage at Hi

9.3. Size:466K vishay
si7447ad.pdf

Si7447ADPVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.0065 at VGS = - 10 V - 35 100 nC- 30 TrenchFET Power MOSFETPowerPAK SO-8 New Low Thermal Resistance PowerPAKPackage with Low 1.07 mm Profile 100 % Rg TestedS6.15 mm 5.15 mm1S

9.4. Size:460K vishay
si7440dp.pdf

Si7440DPVishay SiliconixN-Channel 30-V (D-S) Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Available0.0065 at VGS = 10 V 21 TrenchFET Power MOSFET30 New Low Thermal Resistance PowerPAK0.008 at VGS = 4.5 V 19 Package with Low 1.07 mm Profile 100 % Rg Tested APPLICATIONSPowerPAK SO-

9.5. Size:461K vishay
si7448dp.pdf

9.6. Size:469K vishay
si7447adp.pdf

9.7. Size:50K vishay
si7446dp.pdf

Si7446DPVishay SiliconixN-Channel 30-V (D-S) Fast Switching MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETD High-Efficiency PWM OptimizedVDS (V) rDS(on) (W) ID (A)D 100% Rg Tested0.0075 @ VGS = 10 V 1930300.010 @ VGS = 4.5 V 17D D D DPowerPAKr SO-8S6.15 mm 5.15 mm1S2S3GG4D8DN-Channel MOSFET7D6D5Bottom ViewS S SOrder

9.8. Size:484K vishay
si7446bdp.pdf

Si7446BDPVishay SiliconixN-Channel 30-V (D-S) Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition 0.0075 at VGS = 10 V 19 TrenchFET Power MOSFET300.010 at VGS = 4.5 V 17 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECPowerPAK SO-8DS6.15 mm 5.15 mm1S2S3 GG

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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