SI7454DDP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SI7454DDP
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 4.1 W
Voltaje máximo drenador - fuente |Vds|: 100 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 7.9 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 3 V
Tiempo de subida (tr): 13 nS
Conductancia de drenaje-sustrato (Cd): 217 pF
Resistencia entre drenaje y fuente RDS(on): 0.033 Ohm
Paquete / Cubierta: POWERPAK-SO-8
Búsqueda de reemplazo de MOSFET SI7454DDP
SI7454DDP Datasheet (PDF)
si7454ddp.pdf
New ProductSi7454DDPVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max.ID (A)a Qg (Typ.) 100 % Rg and UIS Tested Material categorization: For definitions of compliance0.033 at VGS = 10 V 21please see www.vishay.com/doc?999120.036 at VGS = 7.5 V 100 20 6.1 nCAPPLICATIONS0.047 at VGS =
si7454dp.pdf
Si7454DPVishay SiliconixN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.034 at VGS = 10 V 7.8 TrenchFET Power MOSFETs1000.040 at VGS = 6.0 V 7.2 New Low Thermal Resistance PowerPAKPackage with Low 1.07 mm Profile PWM Optimized for Fast Switching 100 % Rg T
si7454cdp.pdf
New ProductSi7454CDPVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0305 at VGS = 10 V 22 TrenchFET Power MOSFET 100 % Rg Tested0.033 at VGS = 7.5 V 100 21 9.5 nC 100 % UIS Tested0.043 at VGS = 4.5 V 18.5 Compliant to RoHS Di
si7456cdp.pdf
New ProductSi7456CDPVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0235 at VGS = 10 V 27.5 TrenchFET Power MOSFET 100 % Rg Tested0.0245 at VGS = 7.5 V 100 27 7.7 nC 100 % UIS Tested0.0315 at VGS = 4.5 V 24 Compliant to RoHS D
si7456dp.pdf
Si7456DPVishay SiliconixN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.025 at VGS = 10 V 9.3 TrenchFET Power MOSFETs1000.028 at VGS = 6.0 V New Low Thermal Resistance PowerPAK8.8Package with Low 1.07 mm Profile PWM Optimized for Fast Switching 100 % Rg Test
si7457dp.pdf
Si7457DPVishay SiliconixP-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.042 at VGS = - 10 V - 28 TrenchFET Power MOSFET- 100 67 nC0.045 at VGS = - 6 V - 28PowerPAK SO-8SS6.15 mm 5.15 mm1S2S3G4GD8D7D6D5Bottom ViewDOrdering I
si7459dp.pdf
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si7450dp.pdf
Si7450DPVishay SiliconixN-Channel 200-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.080 at VGS = 10 V 5.3 TrenchFET Power MOSFETs2000.090 at VGS = 6 V 5.0 New Low Thermal Resistance PowerPAKPackage with Low 1.07 mm Profile PWM Optimized for Fast Switching 100 % Rg Tes
si7452dp.pdf
Si7452DPVishay SiliconixN-Channel 60-V (D-S) Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Available0.0083 at VGS = 10 V 60 19.3 105 TrenchFET Power MOSFET New Low Thermal Resistance PowerPAKPackage with Low 1.07 mm Profile 100 % Rg Tested High Threshold Voltage At Hi
si7456ddp.pdf
New ProductSi7456DDPVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max.ID (A)a Qg (Typ.) 100 % Rg and UIS Tested0.023 at VGS = 10 V 27.8 Material categorization:For definitions of compliance please see0.024 at VGS = 7.5 V 100 27.2 9.7 nCwww.vishay.com/doc?999120.031 at VGS = 4.5 V
si7455dp.pdf
Si7455DPVishay SiliconixP-Channel 80-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.025 at VGS = - 10 V - 28 TrenchFET Power MOSFET- 80 65 nC0.029 at VGS = - 6 V - 28PowerPAK SO-8SS6.15 mm 5.15 mm1S2GS3G4D8D7D6DD5Bottom View P-Channel MOS
Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
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