SI7465DP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SI7465DP
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 9 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.064 Ohm
   Paquete / Cubierta: POWERPAK-SO-8

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SI7465DP Datasheet (PDF)

..1. Size:466K vishay
si7465dp.pdf

Si7465DPVishay SiliconixP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Available0.064 at VGS = - 10 V - 5 TrenchFET Power MOSFET- 60 26 New Low Thermal Resistance PowerPAK0.080 at VGS = - 4.5 V - 4.5Package with Low 1.07 mm ProfilePowerPAK SO-8 S6.15 mm 5.15 mm 1

9.1. Size:326K vishay
si7460dp.pdf

Si7460DPVishay SiliconixN-Channel 60-V (D-S) Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.0096 at VGS = 10 V 18 TrenchFET Power MOSFETs600.012 at VGS = 4.5 V 16 New Low Thermal Resistance PowerPAKPackage with Low 1.07 mm ProfilePowerPAK SO-8 S6.15 mm 5.15 mm 1S

9.2. Size:468K vishay
si7464dp.pdf

Si7464DPVishay SiliconixN-Channel 200-V (D-S) Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.24 at VGS = 10 V 2.8 TrenchFET Power MOSFETs2000.26 at VGS = 6 V 2.7 New Low Thermal Resistance PowerPAKPackage with Low 1.07 mm Profile PWM Optimized For Fast SwitchingPowe

9.3. Size:166K vishay
si7463dp.pdf

Si7463DPVishay SiliconixP-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.0092 at VGS = - 10 V - 18.6 TrenchFET Power MOSFETs- 40 New Low Thermal Resistance PowerPAK0.014 at VGS = - 4.5 V - 15Package with Low 1.07 mm Profile Compliant to RoHS Directive 2002/95/EC

9.4. Size:469K vishay
si7462dp.pdf

Si7462DPVishay SiliconixN-Channel 200-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.130 at VGS = 10 V 4.1 TrenchFET Power MOSFETs2000.142 at VGS = 6.0 V 3.9 New Low Thermal Resistance PowerPAKPackage with Low 1.07 mm Profile PWM Optimized For Fast SwitchingPowerPAK SO-8

9.5. Size:517K vishay
si7463adp.pdf

New ProductSi7463ADPVishay SiliconixP-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () Max. ID (A) Qg (Typ.) Definition TrenchFET Power MOSFET0.0100 at VGS = - 10 V - 46 100% Rg and UIS Tested- 40 48.6 nC0.0135 at VGS = - 4.5 V - 40 Compliant to RoHS Directive 2002/95/ECPowerPAK SO-8A

9.6. Size:378K vishay
si7461dp.pdf

Si7461DPwww.vishay.comVishay SiliconixP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETsVDS (V) RDS(on) ()ID (A) Low thermal resistance PowerPAK package 0.0145 at VGS = -10 V -14.4with low 1.07 mm profile -600.0190 at VGS = -4.5 V -12.6 Material categorization: for definitions of compliance please see AvailablePowerPAK SO-

9.7. Size:472K vishay
si7469dp.pdf

Si7469DPVishay SiliconixP-Channel 80-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.025 at VGS = - 10 V - 28 TrenchFET Power MOSFET- 80 55 nC0.029 at VGS = - 4.5 V - 28PowerPAK SO-8SS6.15 mm 5.15 mm1S2S3G4GD8D7D6D5Bottom ViewDOrdering I

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

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