SI7621DN Todos los transistores

 

SI7621DN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SI7621DN

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 3.1 W

Tensión drenaje-fuente (Vds): 20 V

Tensión compuerta-fuente (Vgs): 12 V

Corriente continua de drenaje (Id): 4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2 V

Tiempo de elevación (tr): 75 nS

Conductancia de drenaje-sustrato (Cd): 95 pF

Resistencia drenaje-fuente RDS(on): 0.09 Ohm

Empaquetado / Estuche: PowerPAK-1212-8

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SI7621DN Datasheet (PDF)

1.1. si7621dn.pdf Size:105K _vishay

SI7621DN
SI7621DN

Si7621DN Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω)ID (A) Qg (Typ.) Definition 0.090 at VGS = - 4.5 V - 4c • TrenchFET® Power MOSFET: 2.5 V Rated - 20 3.8 nC 0.180 at VGS = - 2.5 V - 4c • PowerPAK® Package - Low Thermal Resistance - Low 1.07 mm Profile • 100 Rg Tested

5.1. si7623dn.pdf Size:579K _vishay

SI7621DN
SI7621DN

New Product Si7623DN Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® Gen III P-Channel Power MOSFET VDS (V) RDS(on) () Max. ID (A) Qg (Typ.) • 100 % Rg and UIS Tested 0.0038 at VGS = - 10 V - 35a • Material categorization: 0.0053 at VGS = - 4.5 V - 20 - 35a 55.5 nC For definitions of compliance please see 0.0090 at VGS = - 2.5 V

5.2. si7629dn.pdf Size:576K _vishay

SI7621DN
SI7621DN

New Product Si7629DN Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® Gen III P-Channel Power MOSFET VDS (V) RDS(on) ()ID (A) Qg (Typ.) • 100 % Rg and UIS Tested 0.0046 at VGS = - 10 V - 35a • Material categorization: - 20 0.0062 at VGS = - 4.5 V - 35a 59 nC For definitions of compliance please see 0.0117 at VGS = - 2.5 V - 35a www.v

 5.3. si7620dn.pdf Size:559K _vishay

SI7621DN
SI7621DN

Si7620DN Vishay Siliconix N-Channel 150-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) • TrenchFET® Power MOSFET 0.126 at VGS = 10 V 150 13 9.5 nC • 100 % Rg Tested RoHS COMPLIANT • 100 % UIS Tested APPLICATIONS PowerPAK® 1212-8 • Primary Side Switch S 3.30 mm 3.30 mm D 1 S 2 S 3 G 4 D 8 D G 7 D

5.4. si7625dn.pdf Size:126K _vishay

SI7621DN
SI7621DN

New Product Si7625DN Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω)ID (A) Qg (Typ.) Definition 0.007 at VGS = - 10 V - 35d • TrenchFET® Power MOSFET - 30 39.5 nC • 100% Rg Tested 0.011 at VGS = - 4.5 V - 35d • 100% UIS Tested • Compliant to RoHS Directive 2002/95/EC PowerPAK® 1

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