SI7880ADP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SI7880ADP

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1.8 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 11 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 3 V

Tiempo de elevación (tr): 12 nS

Resistencia drenaje-fuente RDS(on): 0.0095 Ohm

Empaquetado / Estuche: PowerPAK-SO-8

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SI7880ADP Datasheet (PDF)

1.1. si7880adp.pdf Size:465K _vishay

Si7860ADP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω)ID (A) Available 0.0095 at VGS = 10 V 16 • TrenchFET® Power MOSFET 30 0.0125 at VGS = 4.5 V • PWM Optimized for High Efficiency 16 • New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile �

5.1. si7884bd.pdf Size:477K _vishay

5.2. si7882dp.pdf Size:456K _vishay

Si7882DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY • Halogen-free available VDS (V) RDS(on) (Ω)ID (A) Available • TrenchFET® Power MOSFET 0.0055 at VGS = 4.5 V 22 RoHS* • New Low Thermal Resistance PowerPAK® 12 COMPLIANT 0.008 at VGS = 2.5 V 18 Package with Low 1.07 mm Profile • PWM Optimized for High Efficiency �

5.3. si7884bdp.pdf Size:480K _vishay

New Product Si7884BDP Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free Option Available VDS (V) RDS(on) (Ω) ID (A)f Qg (Typ.) • TrenchFET® Power MOSFET 0.0075 at VGS = 10 V 58 • 100 % Rg and UIS Tested RoHS 40 21 nC COMPLIANT 0.009 at VGS = 4.5 V 53 APPLICATIONS PowerPAK SO-8 • Synchronous Rectifier S 6.15 mm 5.15 mm 1 S

5.4. si7886adp.pdf Size:462K _vishay

Si7886ADP Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free available VDS (V) RDS(on) (Ω)ID (A) Qg (Typ.) • TrenchFET® Power MOSFET RoHS 0.0040 at VGS = 10 V 25 COMPLIANT • Optimized for “Low Side” Synchronous 30 47 0.0048 at VGS = 4.5 V 23 Rectifier Operation • New Low Thermal Resistance PowerPAK® Package with Low 1.07

5.5. si7888dp.pdf Size:461K _vishay

Si7888DP Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free available VDS (V) RDS(on) (Ω)ID (A) • TrenchFET® Power MOSFET RoHS 0.012 at VGS = 10 V 15.7 • New Low Thermal Resistance PowerPAK® COMPLIANT 30 0.020 at VGS = 4.5 V 12.1 Package with Low 1.07 mm Profile • Optimized for “High-Side” Synchronous Rectifier Operation

5.6. si7884dp.pdf Size:77K _vishay