SI9434BDY MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SI9434BDY
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 1.3 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V
|Id|ⓘ - Corriente continua
de drenaje: 4.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 45 nS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
Encapsulados: SO-8
Búsqueda de reemplazo de SI9434BDY MOSFET
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SI9434BDY datasheet
9.6. Size:1809K kexin
si9435dy.pdf 
SMD Type MOSFET P-Channel MOSFET SI9435DY SOP-8 Features VDS (V) =-30V ID =-5.3 A (VGS =-10V) 1.50 0.15 RDS(ON) 50m (VGS =-10V) RDS(ON) 80m (VGS =-4.5V) Fast switching speed 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate 5 4 6 3 7 2 8 1 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-
9.7. Size:1669K kexin
si9435bdy.pdf
SMD Type IC SMD Type MOSFET P-Channel Enhancement MOSFET SI9435BDY (KI9435BDY) SOP-8 Features VDSS = -30V ID = -5.7A (VGS = -10V) RDS(ON) = 42 m @ VGS = -10 V 1.50 0.15 RDS(ON) = 70 m @ VGS = -4.5 V S S D 1 8 G S D 2 7 S D 3 6 G D 4 5 D P-Channel MOSFET Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltag
9.8. Size:3139K cn szxunrui
si9435.pdf
SOP-8 Plastic-Encapsulate MOSFETS SI9435 P-Channel Enhancement Mode Power MOSFET SOP-8 Description SD 1 8 The SI9435 uses advanced trench technology to provide S D 2 7 excellent RDS(ON), low gate charge and operation with gate SD 3 6 G D 4 5 voltages as low as 4.5V. Top View Equivalent Cir cuit General Features S VDS = -30V = -4.2A RDS(ON)
9.9. Size:846K cn vbsemi
si9435dy-t1.pdf
SI9435DY-T1 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET 0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC 0.060 at VGS = - 4.5 V - 4.4 S SO-8 G SD 1 8 S D 2 7 3 6 SD G D 4 5 D T
9.10. Size:886K cn vbsemi
si9433bdy.pdf
SI9433BDY www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition a 0.015 at VGS = - 4.5 V TrenchFET Power MOSFET - 13 a 100 % Rg Tested 0.026 at VGS = - 2.5 V - 20 20 nC - 10 Built in ESD Protection with Zener Diode 0.065 at VGS = - 1.8 V - 8 Typical
9.11. Size:1458K cn vbsemi
si9430dy-t1.pdf
SI9430DY-T1 www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition a 0.015 at VGS = - 4.5 V TrenchFET Power MOSFET - 13 a 100 % Rg Tested 0.026 at VGS = - 2.5 V - 20 20 nC - 10 Built in ESD Protection with Zener Diode 0.065 at VGS = - 1.8 V - 8 Typic
9.12. Size:806K cn vbsemi
si9435bdy-t1-e3.pdf
SI9435BDY-T1-E3 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET 0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC 0.060 at VGS = - 4.5 V - 4.4 S SO-8 G SD 1 8 S D 2 7 3 6 SD G D 4 5
9.13. Size:886K cn vbsemi
si9433dy.pdf
SI9433DY www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition a 0.015 at VGS = - 4.5 V TrenchFET Power MOSFET - 13 a 100 % Rg Tested 0.026 at VGS = - 2.5 V - 20 20 nC - 10 Built in ESD Protection with Zener Diode 0.065 at VGS = - 1.8 V - 8 Typical
Otros transistores... SI8821EDB, SI8822, SI8851EDB, SI9407BDY, SI9410BDY, SI9424BDY, SI9424DY, SI9433BDY, 13N50, SI9926CDY, SI9933CDY, SI9934BDY, SI9945BDY, JCS5N50VT, JCS5N50RT, JCS5N50CT, JCS5N50FT
