MDD1503RH Todos los transistores

 

MDD1503RH MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MDD1503RH

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 59.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 87.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12.7 nS

Cossⓘ - Capacitancia de salida: 354 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0047 Ohm

Encapsulados: TO-252

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MDD1503RH datasheet

 ..1. Size:656K  magnachip
 mdd1503rh.pdf pdf_icon

MDD1503RH

MDD1503 Single N-channel Trench MOSFET 30V, 87.5A, 4.7m Features General Description The MDD1503 uses advanced MagnaChip s MOSFET V = 30V DS Technology, which provides high performance in on-state I = 87.5A @V = 10V D GS resistance, fast switching performance and excellent R DS(ON) (MAX) quality. MDD1503 is suitable device for DC to DC

 8.1. Size:672K  magnachip
 mdd1501rh.pdf pdf_icon

MDD1503RH

MDD1501 Single N-channel Trench MOSFET 30V, 67.4A, 5.6m General Description Features The MDD1501 uses advanced MagnaChip s MOSFET V = 30V DS Technology, which provides high performance in on-state I = 67.4A @V = 10V D GS resistance, fast switching performance and excellent R DS(ON) (MAX) quality. MDD1501 is suitable device for DC to DC

 8.2. Size:661K  magnachip
 mdd1504rh.pdf pdf_icon

MDD1503RH

MDD1504 Single N-channel Trench MOSFET 30V, 31.5A, 12.7m Features General Description The MDD1504 uses advanced MagnaChip s MOSFET V = 30V DS Technology, which provides high performance in on-state I = 31.5A @V = 10V D GS resistance, fast switching performance and excellent R DS(ON) (MAX) quality. MDD1504 is suitable device for DC to DC

 8.3. Size:661K  magnachip
 mdd1502rh.pdf pdf_icon

MDD1503RH

MDD1502 Single N-channel Trench MOSFET 30V, 45.7A, 8.5m General Description Features The MDD1502 uses advanced MagnaChip s MOSFET V = 30V DS Technology, which provides high performance in on-state I = 45.7A @V = 10V D GS resistance, fast switching performance and excellent R DS(ON) (MAX) quality. MDD1502 is suitable device for DC to DC

MOSTRAR MÁS

Otros transistores... RU190N08S , MDA0531EURH , MDC0531EURH , MDCA0418EURH , MDD1051RH , MDD14N25CRH , MDD1501RH , MDD1502RH , AO3400A , MDD1504RH , MDD1752RH , MDD1754RH , MDD1851RH , MDD1901RH , MDD1902RH , MDD1903RH , MDD1904RH .

History: SUM90N10-8M2P | MTD5P06VT4G | SSF80R360S2

 

 

 

 

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