MDD1951RH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MDD1951RH
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 32.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 17.9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 15.2 nS
   Cossⓘ - Capacitancia de salida: 70 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.042 Ohm
   Paquete / Cubierta: TO-252

Búsqueda de reemplazo de MOSFET MDD1951RH

MDD1951RH Datasheet (PDF)

..1. Size:670K magnachip
mdd1951rh.pdf

MDD1951 Single N-Channel Trench MOSFET 60V, 17.9A, 45.0m General Description Features The MDD1951 uses advanced MagnaChips trench V = 60V DSMOSFET Technology to provide high performance in on- I = 17.9A @V = 10V D GSstate resistance, switching performance and reliability R DS(ON)Low R , low gate charge can be offering superior

..2. Size:907K cn vbsemi
mdd1951rh.pdf

MDD1951RHwww.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise not

9.1. Size:881K magnachip
mdd1902rh.pdf

MDD1902 Single N-channel Trench MOSFET 100V, 40A, 28m General Description Features The MDD1902 uses advanced MagnaChips MOSFET VDS = 100V Technology, which provides high performance in on-state I = 40A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDD1902 is suitable device for DC/DC

9.2. Size:802K magnachip
mdd1903rh.pdf

MDD1903 Single N-channel Trench MOSFET 100V, 12.8A, 105m General Description Features The MDD1903 uses advanced MagnaChips MOSFET V = 100V DSTechnology, which provides high performance in on-state I = 12.8A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON) (MAX)quality. MDD1903 is suitable device for DC to DC

9.3. Size:841K magnachip
mdd1901rh.pdf

MDD1901 Single N-channel Trench MOSFET 100V, 40A, 22m General Description Features The MDD1901 uses advanced MagnaChips MOSFET VDS = 100V Technology, which provides high performance in on-state I = 40A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDD1901 is suitable device for DC/DC

9.4. Size:992K magnachip
mdd1904rh.pdf

MDD1904 Single N-channel Trench MOSFET 100V, 10.8A, 140m General Description Features The MDD1904 uses advanced MagnaChips MOSFET V = 100V DSTechnology, which provides high performance in on-state I = 10.8A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON) (MAX)quality. MDD1904 is suitable device for DC to DC

9.5. Size:818K cn vbsemi
mdd1902rh.pdf

MDD1902RHwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.030 at VGS = 10 V40RoHS*100 Low Thermal Resistance Package0.035 at VGS = 4.5 V37COMPLIANTDTO-252GG D STop ViewSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unle

9.6. Size:287K inchange semiconductor
mdd1903rh.pdf

isc N-Channel MOSFET Transistor MDD1903RHFEATURESDrain Current : I = 12.8A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 105m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so

Otros transistores... MDD1504RH , MDD1752RH , MDD1754RH , MDD1851RH , MDD1901RH , MDD1902RH , MDD1903RH , MDD1904RH , IRFB3306 , MDD2N60RH , MDD3752ARH , MDD3752RH , MDD3754RH , MDD3N40RH , MDD3N50GRH , MDD4N20YRH , MDD4N25RH .

Liste

Recientemente añadidas las descripciónes de los transistores: