MDD5N50RH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MDD5N50RH
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 70 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 24 nS
   Cossⓘ - Capacitancia de salida: 65 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.4 Ohm
   Paquete / Cubierta: TO-252

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MDD5N50RH Datasheet (PDF)

..1. Size:919K magnachip
mdd5n50rh.pdf

MDD5N50 N-Channel MOSFET 500V, 4.4 A, 1.4 General Description Features The MDD5N50 uses advanced Magnachips V = 500V DSMOSFET Technology, which provides low on-state I = 4.4A @V = 10V D GSresistance, high switching performance and RDS(ON) 1.4 @VGS = 10V excellent quality. MDD5N50 is suitable device for SMPS, Ballast and general purpose applicatio

7.1. Size:928K magnachip
mdd5n50frh.pdf

MDD5N50F N-Channel MOSFET 500V, 4.2 A, 1.55 General Description Features The MDD5N50F uses advanced Magnachips V = 500V DSMOSFET Technology, which provides low on-state I = 4.2A @V = 10V D GSresistance, high switching performance and RDS(ON) 1.5 @VGS = 10V excellent quality. MDD5N50F is suitable device for Power Supply, Applications PFC and gen

7.2. Size:770K magnachip
mdd5n50zrh.pdf

MDD5N50Z N-Channel MOSFET 500V, 4.4 A, 1.4 General Description Features The MDD5N50Z uses advanced Magnachips V = 500V DSMOSFET Technology, which provides low on-state VDS = 550V @ Tjmax resistance, high switching performance and I = 4.4A @V = 10V D GSexcellent quality. R 1.4 @V = 10V DS(ON) GSMDD5N50Z is suitable device for SMPS, HID and general pur

9.1. Size:865K magnachip
mdd5n40rh mdi5n40th.pdf

MDI5N40/MDD5N40 N-Channel MOSFET 400V, 3.4 A, 1.6General Description Features The MDI5N40 / MDD5N40 use advanced VDS = 400V Magnachips MOSFET Technology, which provides ID = 3.4A @VGS = 10V low on-state resistance, high switching performance @VGS = 10V RDS(ON) 1.6 and excellent quality. MDI5N40 is suitable device for SMPS, HID and general pur

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