MDF13N50GTH Todos los transistores

 

MDF13N50GTH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MDF13N50GTH
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 42 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 13 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 54 nS
   Cossⓘ - Capacitancia de salida: 173 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.5 Ohm
   Paquete / Cubierta: TO-220F
     - Selección de transistores por parámetros

 

MDF13N50GTH Datasheet (PDF)

 ..1. Size:1131K  magnachip
 mdf13n50gth mdp13n50gth.pdf pdf_icon

MDF13N50GTH

MDP13N50G / MDF13N50G N-Channel MOSFET 500V, 13.0A, 0.5 General Description Features VDS = 500V These N-channel MOSFET are produced using advanced VDS = 550V @ Tjmax MagnaChips MOSFET Technology, which provides low on-ID = 13.0A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON)

 6.1. Size:1209K  magnachip
 mdf13n50bth mdp13n50bth.pdf pdf_icon

MDF13N50GTH

MDP13N50B / MDF13N50B N-Channel MOSFET 500V, 13.0 A, 0.5General Description Features The MDP/F13N50B uses advanced Magnachips VDS = 500V MOSFET Technology, which provides low on-state ID = 13.0A @VGS = 10V resistance, high switching performance and RDS(ON) 0.5 @VGS = 10V excellent quality. MDP/F13N50B is suitable device for SMPS, HID Applications and general p

 8.1. Size:811K  magnachip
 mdf13n65bth.pdf pdf_icon

MDF13N50GTH

MDF13N65B N-Channel MOSFET 650V, 14A, 0.46 General Description Features These N-channel MOSFET are produced using advanced V = 650V DSMagnaChips MOSFET Technology, which provides low on- I = 14A @ V = 10V D GSstate resistance, high switching performance and excellent R 0.46 @ V = 10V DS(ON) GSquality. Applications These devices are suitable device

 8.2. Size:830K  magnachip
 mdf13n65b.pdf pdf_icon

MDF13N50GTH

MDF13N65B N-Channel MOSFET 650V, 14A, 0.46 General Description Features These N-channel MOSFET are produced using advanced V = 650V DSMagnaChips MOSFET Technology, which provides low on- I = 14A @ V = 10V D GSstate resistance, high switching performance and excellent R 0.46 @ V = 10V DS(ON) GSquality. Applications These devices are suitable device

MOSTRAR MÁS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: G3205 | MTN50N06E3 | IPI051N15N5 | ELM34409AA | SM3116NAF | CPC3730 | SSFT4004

 

 
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