MDP10N50TH Todos los transistores

 ..1. Size:729K  magnachip
 mdp10n50th.pdf

MDP10N50 N-Channel MOSFET 500V, 10.0 A, 0.75 General Description Features The MDP10N50 uses advanced Magnachip s VDS = 500V MOSFET Technology, which provides low on- ID = 10.0A @VGS = 10V state resistance, high switching performance RDS(ON)

 8.1. Size:1067K  1
 mdp10n027th.pdf

MDP10N027TH Single N-channel Trench MOSFET 100V, 120A, 2.8m General Description Features The MDP10N027TH uses advanced Magnachip s MOSFET V = 100V DS Technology, which provides high performance in on-state resistance, I = 120A @V = 10V D GS fast switching performance, and excellent quality. Very low on-resistance R DS(ON)

 8.2. Size:1025K  magnachip
 mdp10n055.pdf

MDP10N055 Single N-channel Trench MOSFET 100V, 120A, 5.5m General Description Features The MDP10N055 uses advanced MagnaChip s MOSFET Technology, V = 100V DS which provides high performance in on-state resistance, fast I = 120A @V = 10V D GS switching performance, and excellent quality. Very low on-resistance R DS(ON)

 8.3. Size:954K  magnachip
 mdp10n055th.pdf

MDP10N055TH Single N-channel Trench MOSFET 100V, 120A, 5.5m General Description Features The MDP10N055TH uses advanced Magnachip s MOSFET V = 100V DS Technology, which provides high performance in on-state resistance, I = 120A @V = 10V D GS fast switching performance, and excellent quality. Very low on-resistance R DS(ON)

 8.4. Size:1143K  magnachip
 mdf10n60gth mdp10n60gth.pdf

MDP10N60G/MDF10N60G N-Channel MOSFET 600V, 10A, 0.7 General Description Features These N-channel MOSFET are produced using advanced V = 600V DS MagnaChip s MOSFET Technology, which provides low on- VDS = 660V @ Tjmax state resistance, high switching performance and excellent ID = 10A @ VGS = 10V quality. RDS(ON) 0.7 @ VGS = 10V Applications These devices are suitabl

 8.5. Size:206K  inchange semiconductor
 mdp10n055.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor MDP10N055 FEATURES With TO-220 packaging High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS PFC stages LCD & PDP TV Power supply Switching applications ABSOLUTE MAXIMU

 8.6. Size:201K  inchange semiconductor
 mdp10n60gth.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor MDP10N60GTH FEATURES With TO-220F packaging High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS PFC stages LCD & PDP TV Power supply Switching applications ABSOLUTE MAX

 8.7. Size:288K  inchange semiconductor
 mdp10n055th.pdf

isc N-Channel MOSFET Transistor MDP10N055TH FEATURES Drain Current I = 130A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 5.5m (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so