MDP10N50TH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MDP10N50TH
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 141 W
Voltaje máximo drenador - fuente |Vds|: 500 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 10 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 5 V
Tiempo de subida (tr): 45 nS
Conductancia de drenaje-sustrato (Cd): 108 pF
Resistencia entre drenaje y fuente RDS(on): 0.75 Ohm
Paquete / Cubierta: TO-220
Búsqueda de reemplazo de MOSFET MDP10N50TH
MDP10N50TH Datasheet (PDF)
mdp10n50th.pdf
MDP10N50 N-Channel MOSFET 500V, 10.0 A, 0.75 General Description Features The MDP10N50 uses advanced Magnachips VDS = 500V MOSFET Technology, which provides low on- ID = 10.0A @VGS = 10V state resistance, high switching performance RDS(ON)
mdp10n027th.pdf
MDP10N027TH Single N-channel Trench MOSFET 100V, 120A, 2.8m General Description Features The MDP10N027TH uses advanced Magnachips MOSFET V = 100V DSTechnology, which provides high performance in on-state resistance, I = 120A @V = 10V D GSfast switching performance, and excellent quality. Very low on-resistance R DS(ON)
mdp10n055.pdf
MDP10N055 Single N-channel Trench MOSFET 100V, 120A, 5.5m General Description Features The MDP10N055 uses advanced MagnaChips MOSFET Technology, V = 100V DSwhich provides high performance in on-state resistance, fast I = 120A @V = 10V D GSswitching performance, and excellent quality. Very low on-resistance R DS(ON)
mdp10n055th.pdf
MDP10N055TH Single N-channel Trench MOSFET 100V, 120A, 5.5m General Description Features The MDP10N055TH uses advanced Magnachips MOSFET V = 100V DSTechnology, which provides high performance in on-state resistance, I = 120A @V = 10V D GSfast switching performance, and excellent quality. Very low on-resistance R DS(ON)
mdf10n60gth mdp10n60gth.pdf
MDP10N60G/MDF10N60G N-Channel MOSFET 600V, 10A, 0.7General Description Features These N-channel MOSFET are produced using advanced V = 600V DSMagnaChips MOSFET Technology, which provides low on- VDS = 660V @ Tjmax state resistance, high switching performance and excellent ID = 10A @ VGS = 10V quality. RDS(ON) 0.7 @ VGS = 10V Applications These devices are suitabl
mdp10n055.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor MDP10N055FEATURESWith TO-220 packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSPFC stagesLCD & PDP TVPower supplySwitching applicationsABSOLUTE MAXIMU
mdp10n60gth.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor MDP10N60GTHFEATURESWith TO-220F packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSPFC stagesLCD & PDP TVPower supplySwitching applicationsABSOLUTE MAX
mdp10n055th.pdf
isc N-Channel MOSFET Transistor MDP10N055THFEATURESDrain Current : I = 130A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 5.5m(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so
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